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arXiv:cond-mat/0612130 · Physical Review Letters

Hidden Charge 2e Boson in Doped Mott Insulators

Robert G. Leigh, Philip Phillips, Ting-Pong Choy

Published Jul 25, 2007• 42 citations
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Abstract

We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).

DOI
10.1103/physrevlett.99.046404

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We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).
We show here that many of the normal state properties of the cuprates can result from the new charge 2e2e2e bosonic field which we have recently [Phys. Rev. Lett. 99, 046404 (2007); Phys. Rev. B 77, 014512 (2007)] shown to exist in the exact low-energy theory of a doped Mott insulator. In particular, the (1) midinfrared band including the nonvanishing of the restricted fff-sum rule in the Mott insulator, (2) T2{T}^{2}T2 contribution to the thermal conductivity, (3) pseudogap, (4) bifurcation of the electron spectrum below the chemical potential, as recently seen in angle-resolved photoemission, (5) insulating behavior away from half-filling, (6) high- and low-energy kinks in the electron dispersion, and (7) TTT-linear resistivity all derive from the charge 2e2e2e bosonic field. We also calculate the inverse dielectric function and show that it possesses a sharp quasiparticle peak and a broad particle-hole continuum. The sharp peak is mediated by a new charge eee composite excitation formed from the binding of a charge 2e2e2e boson and a hole and represents a distinctly new prediction of this theory. It is this feature that is responsible for the dynamical part of the spectral weight transferred across the Mott gap. We propose that electron-energy loss spectroscopy at finite momentum and frequency can be used to probe the existence of such a sharp feature.
We expand on our earlier work [R. G. Leigh et al., Phys. Rev. Lett. 99, 46404 (2007)] in which we constructed the exact low energy theory of a doped Mott insulator by explicitly integrating (rather than projecting) out the degrees of freedom far away from the chemical potential. The exact low energy theory contains degrees of freedom that cannot be obtained from projective schemes. In particular, a charge $\ifmmode\pm\else\textpm\fi{}2e$ bosonic field that is not made out of elemental excitations emerges at low energies. Such a field accounts for dynamical spectral weight transfer across the Mott gap. At half-filling, we show that two such excitations emerge which play a crucial role in preserving the Luttinger surface along which the single-particle Green's function vanishes. In addition, the interactions with the bosonic fields defeat the artificial local SU(2) symmetry that is present in the Heisenberg model. We also apply this method to the Anderson-U impurity and show that in addition to the Kondo interaction, bosonic degrees of freedom appear as well. Finally, we show that as a result of the bosonic degree of freedom, the electron at low energies is in a linear superposition of two excitations---one arising from the standard projection into the low energy sector and the other from the binding of a hole and the boson.
We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The presence of such a collective degree of freedom which is not a consequence of proximity to a phase transition is a consequence of dynamical spectral weight transfer from high to low energies. This physics is captured by the charge 2e2e2e boson that emerges by explicitly integrating out the high-energy scale in the Hubbard model. The charge 2e2e2e boson binds to a hole, thereby mediating new charge eee states at low energy. It is the presence of such charge eee states which have no counterpart in the non-interacting system that provides the general mechanism for the breakdown of Fermi liquid theory in doped Mott insulators. The relationship between the charge 2e2e2e boson formulation and the standard perturbative treatment is explained.
With the hierarchical Green’s function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green’s function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weight of the one-particle Green’s function is proportional to the hole doping concentration that is mainly produced by the charge fluctuation of electrons, while the excitation spectrum of the electrons is composed of two parts: One is contributed by the spin fluctuation of the electrons, which is proportional to the hole doping concentration, and another one is coming from the coupling between the charge and spin fluctuations of the electrons that takes the maximum at undoping. All of these low energy/temperature physical properties originate from the strong on-site Coulomb interaction. The present results are consistent with the spectroscopy observations of the cuprate superconductors and the numerical calculations in normal state above the pseudogap regime.
Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge 2e2e2e and of energy U−2μU-2μU−2μ peaked at momentum (π/a,π/a)(π/a,π/a)(π/a,π/a) in the non-superconducting state due to doping. Such a collective excitation arises from the electron pair correlation. Its existence is related to the breakdown of an approximate SU(2) particle-hole symmetry, from which an effective field theory of the new excitations is constructed.
Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted much research attention. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy [P. Cai et al., Nat. Phys. 12, 1047 (2016); C. Ye et al., Nat. Commun. 4, 1365 (2013)] on lightly doped Mott insulator with an antiferromagnetic order found the presence of in-gap states with energy of order half an eV above the chemical potential. The measured spectral properties with doping are not quite consistent with earlier theoretical works. Although the experiment has disorder and localization effect, but for the energy scale we will study here, a model without disorder is sufficed to illustrate the underlying physics. We perform a diagonalization method on top of the variational Monte Carlo calculation to study the evolution of antiferromagnetic Mott state with doped hole concentration in the Hubbard model. Our results found in-gap states that behave similarly with ones reported by STS. These in-gap states acquire a substantial amount of dynamical spectral weight transferred from the upper Hubbard band. The in-gap states move toward chemical potential with increasing spectral weight as doping increases. Our result also provides information about the energy scale of these in-gap states in relation with the Coulomb coupling strength UUU.