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arXiv:0712.2841 · Physical Review B

Hidden charge- 2e boson: Experimental consequences for doped Mott insulators

Ting-Pong Choy, Robert G. Leigh, Philip Phillips

Published Mar 25, 2008• 16 citations
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Abstract

We show here that many of the normal state properties of the cuprates can result from the new charge $2e$ bosonic field which we have recently [Phys. Rev. Lett. 99, 046404 (2007); Phys. Rev. B 77, 014512 (2007)] shown to exist in the exact low-energy theory of a doped Mott insulator. In particular, the (1) midinfrared band including the nonvanishing of the restricted $f$-sum rule in the Mott insulator, (2) ${T}^{2}$ contribution to the thermal conductivity, (3) pseudogap, (4) bifurcation of the electron spectrum below the chemical potential, as recently seen in angle-resolved photoemission, (5) insulating behavior away from half-filling, (6) high- and low-energy kinks in the electron dispersion, and (7) $T$-linear resistivity all derive from the charge $2e$ bosonic field. We also calculate the inverse dielectric function and show that it possesses a sharp quasiparticle peak and a broad particle-hole continuum. The sharp peak is mediated by a new charge $e$ composite excitation formed from the binding of a charge $2e$ boson and a hole and represents a distinctly new prediction of this theory. It is this feature that is responsible for the dynamical part of the spectral weight transferred across the Mott gap. We propose that electron-energy loss spectroscopy at finite momentum and frequency can be used to probe the existence of such a sharp feature.

DOI
10.1103/physrevb.77.104524

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Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted much research attention. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy [P. Cai et al., Nat. Phys. 12, 1047 (2016); C. Ye et al., Nat. Commun. 4, 1365 (2013)] on lightly doped Mott insulator with an antiferromagnetic order found the presence of in-gap states with energy of order half an eV above the chemical potential. The measured spectral properties with doping are not quite consistent with earlier theoretical works. Although the experiment has disorder and localization effect, but for the energy scale we will study here, a model without disorder is sufficed to illustrate the underlying physics. We perform a diagonalization method on top of the variational Monte Carlo calculation to study the evolution of antiferromagnetic Mott state with doped hole concentration in the Hubbard model. Our results found in-gap states that behave similarly with ones reported by STS. These in-gap states acquire a substantial amount of dynamical spectral weight transferred from the upper Hubbard band. The in-gap states move toward chemical potential with increasing spectral weight as doping increases. Our result also provides information about the energy scale of these in-gap states in relation with the Coulomb coupling strength $U$.

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We show here that many of the normal state properties of the cuprates can result from the new charge 2e2e2e bosonic field which we have recently [Phys. Rev. Lett. 99, 046404 (2007); Phys. Rev. B 77, 014512 (2007)] shown to exist in the exact low-energy theory of a doped Mott insulator. In particular, the (1) midinfrared band including the nonvanishing of the restricted fff-sum rule in the Mott insulator, (2) T2{T}^{2}T2 contribution to the thermal conductivity, (3) pseudogap, (4) bifurcation of the electron spectrum below the chemical potential, as recently seen in angle-resolved photoemission, (5) insulating behavior away from half-filling, (6) high- and low-energy kinks in the electron dispersion, and (7) TTT-linear resistivity all derive from the charge 2e2e2e bosonic field. We also calculate the inverse dielectric function and show that it possesses a sharp quasiparticle peak and a broad particle-hole continuum. The sharp peak is mediated by a new charge eee composite excitation formed from the binding of a charge 2e2e2e boson and a hole and represents a distinctly new prediction of this theory. It is this feature that is responsible for the dynamical part of the spectral weight transferred across the Mott gap. We propose that electron-energy loss spectroscopy at finite momentum and frequency can be used to probe the existence of such a sharp feature.
We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).
We expand on our earlier work [R. G. Leigh et al., Phys. Rev. Lett. 99, 46404 (2007)] in which we constructed the exact low energy theory of a doped Mott insulator by explicitly integrating (rather than projecting) out the degrees of freedom far away from the chemical potential. The exact low energy theory contains degrees of freedom that cannot be obtained from projective schemes. In particular, a charge $\ifmmode\pm\else\textpm\fi{}2e$ bosonic field that is not made out of elemental excitations emerges at low energies. Such a field accounts for dynamical spectral weight transfer across the Mott gap. At half-filling, we show that two such excitations emerge which play a crucial role in preserving the Luttinger surface along which the single-particle Green's function vanishes. In addition, the interactions with the bosonic fields defeat the artificial local SU(2) symmetry that is present in the Heisenberg model. We also apply this method to the Anderson-U impurity and show that in addition to the Kondo interaction, bosonic degrees of freedom appear as well. Finally, we show that as a result of the bosonic degree of freedom, the electron at low energies is in a linear superposition of two excitations---one arising from the standard projection into the low energy sector and the other from the binding of a hole and the boson.
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behavior. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the two-dimensional Hubbard model. Because the charge gap arises from on-site correlations, we have been refining the nonperturbative approach of Matsumoto and Mancini [Phys. Rev. B 55, 2095 (1997)] which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbor energy scale J. At half-filling, we find that the spectral function possesses a gap of order U and is devoid of any coherent quasiparticle peaks although ordering or charge fractionalization are absent. At low temperatures, local antiferromagnetic correlations emerge. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. The breakdown of Luttinger's theorem in the underdoped regime is traced both to the dynamically generated Mott gap as well to a nonvanishing of the imaginary part of the self-energy at the Fermi level. Spectral weight transfer across the Mott gap also emerges as a ubiquitous feature of a doped Mott insulator and suggests that high- and low-energy scales are inseparable. Additionally in the underdoped regime, we find that a pseudogap exists in the single-particle density of states as well as in the heat capacity. The pseudogap (which is set by the energy scale t2/U){t}^{2}/U)t2/U) is argued to be a ubiquitous feature of a lightly doped Mott state and simply represents the fact that hole transport involves double occupancy. In analogy with the Mott gap and antiferromagnetism, we propose that ordering may also accompany the formation of a pseudogap. We suggest a current pattern within a one-band model that preserves translational but breaks time-reversal symmetry along the canonical x and y axes but not along $x=\ifmmode\pm\else\textpm\fi{}y$ that is consistent with the experimental observations. Finally, we show that the Hall coefficient in a doped Mott insulator must change sign at a doping level x<1/3.x<1/3.x<1/3. The sign change is tied to a termination of strong correlation physics in the doped Mott state.
The internal structure of doped holes in the Mott insulator may provide important insight into the physics of doped cuprates. Its observability via a single-particle probe by scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) is explored in this paper. Specifically, we study the single-particle spectral function based on a two-hole variational ground-state wave function [J.-Y. Zhao et al., Phys. Rev. X 12, 011062 (2022)] in the $t\text{\ensuremath{-}}J$ model. The latter as a strongly correlated state possesses a dichotomy of ddd-wave Cooper pairing and sss-wave ``twisted'' hole pairing. This pairing structure will give rise to two branches of local spectral function at finite energies. The low-lying one corresponds to a nodal-like quasiparticle excitation and the higher branch is associated with the pair breaking of ``twisted'' quasiparticles, with the threshold energy resembling a pseudogap, which is consistent with the recent STS observation. It can be further extended into energy spectra in momentum space measurable by ARPES, where the low-energy dispersion is also shown to agree well with the quantum Monte Carlo numerical result for a single hole. It implies that the dominant pairing force arises from the twisted holes showing up in the high-energy branch. The effect of the next-nearest-neighbor hopping integral ${t}^{\ensuremath{'}}$ is also examined, which shows an interesting distinction between ${t}^{\ensuremath{'}}/t>0$ and ${t}^{\ensuremath{'}}/t\ensuremath{\le}0$ with a dramatic shift of the low-lying excitation from the nodal region to the antinodal region, but with the high-energy branch remaining insensitive to ${t}^{\ensuremath{'}}$. Finally, a possible ``orthogonality catastrophe'' effect, namely, a ``dark matter'' component in the strongly correlated wave function that cannot be directly detected by the single-electron spectroscopy, is briefly discussed.
We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The presence of such a collective degree of freedom which is not a consequence of proximity to a phase transition is a consequence of dynamical spectral weight transfer from high to low energies. This physics is captured by the charge 2e2e2e boson that emerges by explicitly integrating out the high-energy scale in the Hubbard model. The charge 2e2e2e boson binds to a hole, thereby mediating new charge eee states at low energy. It is the presence of such charge eee states which have no counterpart in the non-interacting system that provides the general mechanism for the breakdown of Fermi liquid theory in doped Mott insulators. The relationship between the charge 2e2e2e boson formulation and the standard perturbative treatment is explained.
Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted much research attention. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy [P. Cai et al., Nat. Phys. 12, 1047 (2016); C. Ye et al., Nat. Commun. 4, 1365 (2013)] on lightly doped Mott insulator with an antiferromagnetic order found the presence of in-gap states with energy of order half an eV above the chemical potential. The measured spectral properties with doping are not quite consistent with earlier theoretical works. Although the experiment has disorder and localization effect, but for the energy scale we will study here, a model without disorder is sufficed to illustrate the underlying physics. We perform a diagonalization method on top of the variational Monte Carlo calculation to study the evolution of antiferromagnetic Mott state with doped hole concentration in the Hubbard model. Our results found in-gap states that behave similarly with ones reported by STS. These in-gap states acquire a substantial amount of dynamical spectral weight transferred from the upper Hubbard band. The in-gap states move toward chemical potential with increasing spectral weight as doping increases. Our result also provides information about the energy scale of these in-gap states in relation with the Coulomb coupling strength UUU.