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arXiv:0802.3405

Breakdown of Fermi Liquid Theory in Doped Mott Insulators by Dynamical Spectral Weight Transfer

Philip Phillips, Ting-Pong Choy, Robert G. Leigh

Published Feb 22, 2008• 1 citation
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Abstract

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The presence of such a collective degree of freedom which is not a consequence of proximity to a phase transition is a consequence of dynamical spectral weight transfer from high to low energies. This physics is captured by the charge $2e$ boson that emerges by explicitly integrating out the high-energy scale in the Hubbard model. The charge $2e$ boson binds to a hole, thereby mediating new charge $e$ states at low energy. It is the presence of such charge $e$ states which have no counterpart in the non-interacting system that provides the general mechanism for the breakdown of Fermi liquid theory in doped Mott insulators. The relationship between the charge $2e$ boson formulation and the standard perturbative treatment is explained.

DOI
10.48550/arxiv.0802.3405

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We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The presence of such a collective degree of freedom which is not a consequence of proximity to a phase transition is a consequence of dynamical spectral weight transfer from high to low energies. This physics is captured by the charge 2e2e2e boson that emerges by explicitly integrating out the high-energy scale in the Hubbard model. The charge 2e2e2e boson binds to a hole, thereby mediating new charge eee states at low energy. It is the presence of such charge eee states which have no counterpart in the non-interacting system that provides the general mechanism for the breakdown of Fermi liquid theory in doped Mott insulators. The relationship between the charge 2e2e2e boson formulation and the standard perturbative treatment is explained.
We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+delta (Pb2212).
We expand on our earlier work [R. G. Leigh et al., Phys. Rev. Lett. 99, 46404 (2007)] in which we constructed the exact low energy theory of a doped Mott insulator by explicitly integrating (rather than projecting) out the degrees of freedom far away from the chemical potential. The exact low energy theory contains degrees of freedom that cannot be obtained from projective schemes. In particular, a charge $\ifmmode\pm\else\textpm\fi{}2e$ bosonic field that is not made out of elemental excitations emerges at low energies. Such a field accounts for dynamical spectral weight transfer across the Mott gap. At half-filling, we show that two such excitations emerge which play a crucial role in preserving the Luttinger surface along which the single-particle Green's function vanishes. In addition, the interactions with the bosonic fields defeat the artificial local SU(2) symmetry that is present in the Heisenberg model. We also apply this method to the Anderson-U impurity and show that in addition to the Kondo interaction, bosonic degrees of freedom appear as well. Finally, we show that as a result of the bosonic degree of freedom, the electron at low energies is in a linear superposition of two excitations---one arising from the standard projection into the low energy sector and the other from the binding of a hole and the boson.
Hall and optical conductivity experiments on the cuprates indicate that the low-energy fermionic degrees of freedom in a doped Mott insulator possess a component that is dynamically generated and hence determined by the temperature. We show explicitly how the spectrum in the lower Hubbard band should be partitioned to describe such dynamically generated charge degrees of freedom and corroborate this picture with the results from the exact low-energy theory of the Hubbard model. A consequence of such dynamics is that the Landau one-to-one correspondence between bare electrons and the effective fermionic degrees of freedom at low energies breaks down explicitly. This state of affairs obtains because the total hole number is not conserved as it contains a dynamical contribution. We propose that any experimental probe that couples to the low-energy dynamics of a doped Mott insulator, quantum oscillation experiments included, should be interpreted in terms of the total dynamically generated hole number rather than the bare value.
We show here that many of the normal state properties of the cuprates can result from the new charge 2e2e2e bosonic field which we have recently [Phys. Rev. Lett. 99, 046404 (2007); Phys. Rev. B 77, 014512 (2007)] shown to exist in the exact low-energy theory of a doped Mott insulator. In particular, the (1) midinfrared band including the nonvanishing of the restricted fff-sum rule in the Mott insulator, (2) T2{T}^{2}T2 contribution to the thermal conductivity, (3) pseudogap, (4) bifurcation of the electron spectrum below the chemical potential, as recently seen in angle-resolved photoemission, (5) insulating behavior away from half-filling, (6) high- and low-energy kinks in the electron dispersion, and (7) TTT-linear resistivity all derive from the charge 2e2e2e bosonic field. We also calculate the inverse dielectric function and show that it possesses a sharp quasiparticle peak and a broad particle-hole continuum. The sharp peak is mediated by a new charge eee composite excitation formed from the binding of a charge 2e2e2e boson and a hole and represents a distinctly new prediction of this theory. It is this feature that is responsible for the dynamical part of the spectral weight transferred across the Mott gap. We propose that electron-energy loss spectroscopy at finite momentum and frequency can be used to probe the existence of such a sharp feature.
In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band picture. Here, based on an analysis of the quantum numbers and the overlaps of relevant states, as well as through a demonstration using the ladder and bilayer $t\text{\ensuremath{-}}J$ models, it is shown that in a continuous Mott transition due to hole doping, the magnetically excited states of the Mott insulator generally emerge in the electron-addition spectrum with the dispersion relation shifted by the Fermi momentum in the momentum region where the lower Hubbard band is not completely filled. This implies that the dispersion relation of a free-electron-like mode in the electron-addition spectrum eventually transforms into essentially the momentum-shifted magnetic dispersion relation of the Mott insulator, while its spectral weight gradually disappears toward the Mott transition. This feature reflects the spin-charge separation of the Mott insulator.
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behavior. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the two-dimensional Hubbard model. Because the charge gap arises from on-site correlations, we have been refining the nonperturbative approach of Matsumoto and Mancini [Phys. Rev. B 55, 2095 (1997)] which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbor energy scale J. At half-filling, we find that the spectral function possesses a gap of order U and is devoid of any coherent quasiparticle peaks although ordering or charge fractionalization are absent. At low temperatures, local antiferromagnetic correlations emerge. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. The breakdown of Luttinger's theorem in the underdoped regime is traced both to the dynamically generated Mott gap as well to a nonvanishing of the imaginary part of the self-energy at the Fermi level. Spectral weight transfer across the Mott gap also emerges as a ubiquitous feature of a doped Mott insulator and suggests that high- and low-energy scales are inseparable. Additionally in the underdoped regime, we find that a pseudogap exists in the single-particle density of states as well as in the heat capacity. The pseudogap (which is set by the energy scale t2/U){t}^{2}/U)t2/U) is argued to be a ubiquitous feature of a lightly doped Mott state and simply represents the fact that hole transport involves double occupancy. In analogy with the Mott gap and antiferromagnetism, we propose that ordering may also accompany the formation of a pseudogap. We suggest a current pattern within a one-band model that preserves translational but breaks time-reversal symmetry along the canonical x and y axes but not along $x=\ifmmode\pm\else\textpm\fi{}y$ that is consistent with the experimental observations. Finally, we show that the Hall coefficient in a doped Mott insulator must change sign at a doping level x<1/3.x<1/3.x<1/3. The sign change is tied to a termination of strong correlation physics in the doped Mott state.