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arXiv:cond-mat/0508519 · Journal of the Physical Society of Japan

Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators

T. Tohyama

Published Mar 14, 2006• 13 citations
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Abstract

Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_{x^2-y^2} wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimum-energy excitation in the A1 (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.

DOI
10.1143/jpsj.75.034713

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Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_{x^2-y^2} wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimum-energy excitation in the A1 (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.
We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters, we find that the Raman intensity is enhanced when the incoming photon energy is not near the optical absorption edge but well above it, being consistent with experimental data. The absence of resonance near the gap edge is associated with the presence of background spins, while photoexcited states for resonance are found to be characterized by the charge degree of freedom. The resonance mechanism is different from those proposed previously.
We study photoinduced optical responses of one-dimensional strongly correlated electron systems. The optical conductivity spectra are calculated for the ground state and a photoexcited state in the one-dimensional Hubbard model at half filling by using the exact diagonalization method. It is found that, in the Mott insulator phase, the photoexcited state has large spectral weights including the Drude weight below the optical gap. As a consequence, the spectral weight above the optical gap is largely reduced. These results imply that a metallic state is induced by photoexcitation. Comparison between the photoexcited and hole-doped states shows that the photoexcitation is similar to chemical doping.
The optical conductivity $\ensuremath{\sigma}(\ensuremath{\omega})$ in the two-dimensional Hubbard model is examined by applying the exact diagonalization technique to small square clusters with periodic boundary conditions up to $\sqrt{20}\ifmmode\times\else\texttimes\fi{}\sqrt{20}$ sites. Spectral-weight distributions at half-filling and their doping dependence in the 20-site cluster are found to be similar to those in a $\sqrt{18}\ifmmode\times\else\texttimes\fi{}\sqrt{18}$ cluster, but different from $4\ifmmode\times\else\texttimes\fi{}4$ results. The results for the 20-site cluster enable us to perform a systematic study of the doping dependence of the spectral-weight transfer from the region of the Mott-gap excitation to lower-energy regions. We discuss the dependence of the Drude weight and the effective carrier number on the electron density at a large on-site Coulomb interaction.
Abstract Photoexcitation of a Mott insulator on a square lattice has weakened the intensity of both single- and two-magnon as observed in time-resolved resonant-inelastic x-ray scattering and time-resolved Raman scattering. However, the spectral change in low-energy regions below the magnons has not been clarified so far. To uncover the nature of photoinduced low-energy magnetic excitations of the Mott insulator, we numerically investigate transient magnetic dynamics in a photoexcited half-filled Hubbard model on the square lattice. After turning off a pump pulse tuned for an absorption edge, new magnetic signals clearly emerge well below magnon energy in both single- and two-magnon excitations. We find that the low-energy excitations are predominantly created via excitonic states at the absorption edge. These exciton-assisted magnetic excitations may provide a possible explanation for low-energy spectral weight in a recent time-resolved two-magnon Raman scattering experiment for insulating YBa2Cu3O6.1.
We investigate the temperature dependence of optical absorption spectra of one-dimensional (1D) and two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filled Hubbard model. In the numerically exact diagonalization calculations on finite-size clusters, we find that in 1D the energy position of the absorption edge is almost independent of temperature, while in 2D the edge position shifts to lower energy with increasing temperature. The different temperature dependence between 1D and 2D is attributed to the difference of the coupling of the charge and spin degrees of freedom. The implications of the results on experiments are discussed in terms of the dimensionality dependence.
In connection with recent experiments on excitation in which Mott insulators change to conductors, we study the properties of excited states beyond the Mott gap as quasi-stationary states for a two-dimensional Hubbard (t-t'-U) model at half filling. A variational Monte Carlo method is used with trial wave functions for paramagnetic or normal (PM), superconducting with dx2-y2-wave (d-SC), isotropic s-wave, and extended s-wave symmetries, and antiferromagnetic (AF) states. The excited states are generated by imposing a minimum number of doubly occupied sites (doublons) D_L on the lowest-energy states. For U>W (W: band width), d_L=D_L/Ns (Ns: number of sites) corresponds to the excitation intensity. It is found that the AF state is the most stable among the states we treated for d_L<0.14 and insulating. The PM and d-SC states become conductive over a threshold d_Lc, and the conduction is caused by unbound doublons and holons (empty sites). The PM state arises for d_L>0.14, but the d-SC state is always hidden by the AF state. The s-wave-type superconducting states are not stabilized for any parameter set.