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arXiv:2210.03276 · Journal of the Physical Society of Japan

Excited States Beyond Mott Gap in Half-Filled-Band Hubbard Model

Hisatoshi Yokoyama, Kenji Kobayashi, Tsutomu Watanabe, Masao Ogata

Published Nov 9, 2022• 2 citations
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Abstract

In connection with recent experiments on excitation in which Mott insulators change to conductors, we study the properties of excited states beyond the Mott gap as quasi-stationary states for a two-dimensional Hubbard (t-t'-U) model at half filling. A variational Monte Carlo method is used with trial wave functions for paramagnetic or normal (PM), superconducting with dx2-y2-wave (d-SC), isotropic s-wave, and extended s-wave symmetries, and antiferromagnetic (AF) states. The excited states are generated by imposing a minimum number of doubly occupied sites (doublons) D_L on the lowest-energy states. For U>W (W: band width), d_L=D_L/Ns (Ns: number of sites) corresponds to the excitation intensity. It is found that the AF state is the most stable among the states we treated for d_L<0.14 and insulating. The PM and d-SC states become conductive over a threshold d_Lc, and the conduction is caused by unbound doublons and holons (empty sites). The PM state arises for d_L>0.14, but the d-SC state is always hidden by the AF state. The s-wave-type superconducting states are not stabilized for any parameter set.

DOI
10.7566/jpsj.91.124705

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In connection with recent experiments on excitation in which Mott insulators change to conductors, we study the properties of excited states beyond the Mott gap as quasi-stationary states for a two-dimensional Hubbard (t-t'-U) model at half filling. A variational Monte Carlo method is used with trial wave functions for paramagnetic or normal (PM), superconducting with dx2-y2-wave (d-SC), isotropic s-wave, and extended s-wave symmetries, and antiferromagnetic (AF) states. The excited states are generated by imposing a minimum number of doubly occupied sites (doublons) D_L on the lowest-energy states. For U>W (W: band width), d_L=D_L/Ns (Ns: number of sites) corresponds to the excitation intensity. It is found that the AF state is the most stable among the states we treated for d_L<0.14 and insulating. The PM and d-SC states become conductive over a threshold d_Lc, and the conduction is caused by unbound doublons and holons (empty sites). The PM state arises for d_L>0.14, but the d-SC state is always hidden by the AF state. The s-wave-type superconducting states are not stabilized for any parameter set.
Abstract In connection with recent tera-Hertz photoexcitation experiments in which strongly correlated materials are changed from Mott-insulating to metallic, we statically study the properties of excited states beyond the Mott gap in the <?CDATA dx2−y2{d}_{{x}^{2}-{y}^{2}}dx2−y2​?> d x 2 − y 2 -wave superconducting (d-SC) branch at half filling, by applying a variational Monte Carlo method to a two-dimensional Hubbard model. It is found that the first-order Mott transition previously found at U = U c for the lowest-energy state vanishes for the excited states. As a result, an insulator-to-d-SC transition occurs as the strength of excitation (corresponding to light intensity) is increased for U/t (> U c /t) fixed. As a mechanism, this conduction is led by newly created free carriers (unbound doublons and holons) in the excited states.
Mechanisms of Mott transitions and d x 2 Ày 2 -wave superconductivity (SC) are studied in the half-filledband Hubbard model on square lattices with a diagonal hopping term (t 0 ), using an optimization (or correlated) variational Monte Carlo method.In the trial wave functions, a doublon-holon binding effect is introduced in addition to the onsite Gutzwiller projection.We mainly treat a d-wave singlet state and a projected Fermi sea.In both wave functions, first-order Mott transitions without direct relevance to magnetic orders occur at U ¼ U c , which is approximately the bandwidth, for arbitrary t 0 =t.These transitions originate in the binding or unbinding of a doublon to a holon.d-wave SC appears in a narrow range immediately below U c .The robust d-wave superconducting correlation is necessarily accompanied by enhanced antiferromagnetic correlation; the strength of SC decreases, as t 0 =t increases.
Abstract With cuprate superconductors in mind, we study the effects of point-type impurity potential (V) on a d x 2−y 2 -wave superconducting (d-SC) state in a strongly correlated squarelattice Hubbard model (U/t = 12) with a diagonal transfer (t′), using a variational Monte Carlo method. At half filling, insulator-to-conductor (filling-control-type Mott) transitions occur at <?CDATA V=VU(±)∼±UV={V}_{U}^{(\pm )}\sim \pm UV=VU(±)​∼±U?> V = V U ( ± ) ∼ ± U . The phase realized for <?CDATA V<VU(−)V\lt {V}_{U}^{(-)}V<VU(−)​?> V < V U ( − ) is robust d-SC and the charge carriers are holes, whereas for <?CDATA V>VU(+)V\gt {V}_{U}^{(+)}V>VU(+)​?> V > V U ( + ) a metallic (or weak d-SC) state appears with charge carriers of electrons. For a partially-filled case where the impurity density is equal to the doping rate, a d-SC-to-insulator transition arises at V ≡ V M ∼ 4t. In the weak-|V| phases, the impurity effects in the electron distribution are smeared out by the screening effect, whereas in the strong-|V| phases, the electron distribution directly depend on the impurity configurations.
To understand the mechanism of Mott transitions in case of no magnetic influence, superfluid-insulator (Mott) transitions in the S=0 Bose Hubbard model at unit filling are studied on the square and triangular lattices, using a variational Monte Carlo method. In trial many-body wave functions, we introduce various types of attractive correlation factors between a doubly-occupied site (doublon, D) and an empty site (holon, H), which play a central role for Mott transitions, in addition to the onsite repulsive (Gutzwiller) factor. By optimizing distance-dependent parameters, we study various properties of this type of wave functions. With a hint from the Mott transition arising in a completely D-H bound state, we propose an improved picture of Mott transitions, by introducing two characteristic length scales, the D-H binding length ξdhξ_{\rm dh}ξdh​ and the minimum D-D exclusion length ξddξ_{\rm dd}ξdd​. Generally, a Mott transition occurs when ξdhξ_{\rm dh}ξdh​ becomes comparable to ξddξ_{\rm dd}ξdd​. In the conductive (superfluid) state, domains of D-H pairs overlap with each other (ξdh>ξddξ_{\rm dh}>ξ_{\rm dd}ξdh​>ξdd​); thereby D and H can propagate independently as density carriers by successively exchanging the partners. In contrast, intersite repulsive Jastrow (D-D and H-H) factors have little importance for the Mott transition.
With high-Tc cuprates in mind, properties of correlated dx2-y2-wave superconducting (SC) and antiferromagnetic (AF) states are studied for the Hubbard (t-t'-U) model on square lattices, using a variational Monte Carlo method. We employ simple trial wave functions including only crucial parameters, such as a doublon-holon binding factor indispensable to describe correlated SC and normal states as doped Mott insulators. U/t, t'/t and δ(doping rate) dependence of relevant quantities are systematically calculated. As U/t increases, a sharp crossover of SC properties occurs at U_co/t \sim 10 from a conventional BCS type to a kinetic-energy-driven type for any t'/t. As δdecreases, U_co/t is smoothly connected to the Mott transition point at half filling. For U/t\lsim 5, steady superconductivity corresponding to the cuprates is not found, whereas the d-wave SC correlation function Pd^\infty rapidly increases for U/t\gsim 6 and becomes maximum at U=U_co. Comparing the δdependence of Pd^\infty with experimentally observed dome-shaped Tc and condensation energy, we find that the effective value of UUU for the cuprates should be larger than the band width, for which the t-J model is valid. Analyzing the kinetic energy, we reveal that for U>U_co only doped holes (electrons) become charge carriers, which will make a small Fermi surface (hole pocket), but for UU_co is determined by two factors, i.e., the AF spin correlation, which creates singlet pairs (pseudogap), and the charge mobility dominated by Mott physics.
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