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arXiv:cond-mat/0410409

Comment on "Critical behavior of the Pauli spin susceptibility..." by A. A. Shashkin et. al

M. I. Reznikov, Sarit Sara Sivan

Published Oct 17, 2004• 0 citations
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Abstract

The paper by A. A. Shashkin et al. [cond-mat/0409100] reports measurements of the thermodynamic magnetization of two-dimensional electrons in silicon. Although the experimental data is very similar to that reported by us more then two years ago, the authors arrive at an opposite conclusion regarding the spin susceptibility "critical behavior" and spin instability in the vicinity of the metal-insulator transition. We show that this interpretation is based on a flawed analysis of the experimental data.

DOI
10.48550/arxiv.cond-mat/0410409

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The paper by A. A. Shashkin et al. [cond-mat/0409100] reports measurements of the thermodynamic magnetization of two-dimensional electrons in silicon. Although the experimental data is very similar to that reported by us more then two years ago, the authors arrive at an opposite conclusion regarding the spin susceptibility "critical behavior" and spin instability in the vicinity of the metal-insulator transition. We show that this interpretation is based on a flawed analysis of the experimental data.
The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping $\ensuremath{\rho}(T)={\ensuremath{\rho}}_{0}\text{exp}[{({T}_{ES}/T)}^{1/2}]$, with TES{T}_{ES}TES​ and $1/{\ensuremath{\rho}}_{0}$ mapping onto each other if one applies a shift of the critical density nc{n}_{\text{c}}nc​ reported earlier. With and without magnetic field, the parameters TES{T}_{ES}TES​ and $1/{\ensuremath{\rho}}_{0}={\ensuremath{\sigma}}_{0}$ exhibit scaling consistent with critical behavior approaching a metal-insulator transition.
We find that the spin susceptibility of a two-dimensional electron system with valley degeneracy does not grow critically at low densities, at variance with experimental results [A. Shashkin et al., Phys. Rev. Lett. 96, 036403 (2006)]. We ascribe this apparent discrepancy to the weak disorder present in experimental samples. Our prediction is obtained from accurate correlation energies computed with state of-the-art diffusion Monte Carlo simulations and fitted with an analytical expression which also provides a local spin density functional for the system under investigation.
We find that the spin susceptibility of a two-dimensional electron system with valley degeneracy does not grow critically at low densities, at variance with experimental results [A. Shashkin et al., Phys. Rev. Lett. 96, 036403 (2006)]. We ascribe this apparent discrepancy to the weak disorder present in experimental samples. Our prediction is obtained from accurate correlation energies computed with state-of-the-art diffusion Monte Carlo simulations and fitted with an analytical expression which also provides a local spin density functional for the system under investigation.
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase, which is stabilized by electronic interactions, from the insulating phase, where disorder prevails over the electronic interactions, has been identified. The existence of the quantum critical point leads to a divergence in the density of states of the underlying collective modes at the transition, causing the thermodynamic properties to behave critically as the transition is approached. We show that the interplay of electron-electron interactions and disorder can explain the observed transport properties and the anomalous enhancement of the spin susceptibility near the metal-insulator transition.