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Bulletin of the American Physical Society

Critical behavior of the Pauli spin susceptibility in a strongly correlated 2D electron liquid

S. Anissimova, A. A. Shashkin, S. V. Kravchenko, Mohammed R. Sakr, Valerii T. Dolgopolov, T. M. Klapwijk

Published Mar 23, 2005• 0 citations
OpenAlex

Abstract

Thermodynamic measurements reveal that the Pauli spin susceptibility in a strongly correlated low-disordered two-dimensional electron system in silicon becomes enhanced by almost an order of magnitude at low electron densities and has a critical behavior close to the metalinsulator transition point. This provides thermodynamic evidence for the existence of a phase transition.

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Comment on "Critical behavior of the Pauli spin susceptibility..." by A. A. Shashkin et. al

M. I. Reznikov, Sarit Sara Sivan

The paper by A. A. Shashkin et al. [cond-mat/0409100] reports measurements of the thermodynamic magnetization of two-dimensional electrons in silicon. Although the experimental data is very similar to that reported by us more then two years ago, the authors arrive at an opposite conclusion regarding the spin susceptibility "critical behavior" and spin instability in the vicinity of the metal-insulator transition. We show that this interpretation is based on a flawed analysis of the experimental data.

arXiv:cond-mat/0410409•Oct 17, 2004•0 citations

Effects of interactions in two dimensions

A. A. Shashkin, A. A. Kapustin, Eduard V. Deviatov +3 more

Strong electron–electron interactions in dilute two-dimensional electron systems in silicon lead to Pauli spin susceptibility growing critically at low electron densities. This effect originates from renormalization of the effective mass rather than the g-factor. The relative mass enhancement is system and disorder independent, which suggests that it is determined by electron–electron interactions only.

Journal of Physics A Mathematical and Theoretical•May 8, 2009•2 citations
Thermodynamic measurements reveal that the Pauli spin susceptibility in a strongly correlated low-disordered two-dimensional electron system in silicon becomes enhanced by almost an order of magnitude at low electron densities and has a critical behavior close to the metalinsulator transition point. This provides thermodynamic evidence for the existence of a phase transition.
With decreasing density n(s) the thermopower S of a low-disorder two-dimensional electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude tending to a divergence at a finite disorder-independent density n(t) consistent with the critical form (-T/S) is proportional to (n(s)-n(t))(x) with x=1.0±0.1 (T is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly interacting 2D electron system.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase, which is stabilized by electronic interactions, from the insulating phase, where disorder prevails over the electronic interactions, has been identified. The existence of the quantum critical point leads to a divergence in the density of states of the underlying collective modes at the transition, causing the thermodynamic properties to behave critically as the transition is approached. We show that the interplay of electron-electron interactions and disorder can explain the observed transport properties and the anomalous enhancement of the spin susceptibility near the metal-insulator transition.
The paper by A. A. Shashkin et al. [cond-mat/0409100] reports measurements of the thermodynamic magnetization of two-dimensional electrons in silicon. Although the experimental data is very similar to that reported by us more then two years ago, the authors arrive at an opposite conclusion regarding the spin susceptibility "critical behavior" and spin instability in the vicinity of the metal-insulator transition. We show that this interpretation is based on a flawed analysis of the experimental data.