A quantum computer that can be constructed based on a superconducting nanocircuits has previously been proposed. We examine the effect of background charge fluctuations on a coupled Josephson charge qubit system used in such a computer. In previous work, the background charge fluctuations were found to be an important dephasing channel for a single Josephson qubit. We investigate the effect of fluctuations in the bias at the charge degeneracy point of a Josephson charge qubit system. Evaluated quantities are gate fidelity and diagonal elements of the qubit's density matrix. The fluctuation leads to gate error, however quantum gate operation becomes more accurate with increasing interaction between qubit systems.
In quantum computation, quantum coherence must be maintained during gate operation. However, in physical implementations, various couplings with the environment are unavoidable and can lead to a dephasing of a quantum bit (qubit). The background charge fluctuations are an important dephasing process, especially in a charge qubit system. We examined the dephasing rate of a qubit due to random telegraph noise. Solving stochastic differential equations, we obtained the dephasing rate of a qubit constructed of a coupled-dot system; we applied our results to the charge Josephson qubit system. We examined the dephasing rates due to two types of couplings between the coupled-dot system and the background charge, namely, fluctuation in the tunnel coupling constant and fluctuation in the asymmetric bias. For a strong-coupling condition, the dephasing rate was inversely proportional to the time constant of the telegraph noise. When there is fluctuation in the tunnel coupling constant, Gaussian decay occurs in the initial regime. We also examined the rate of dephasing due to many impurity sites. For a weak-coupling condition with fluctuation in the asymmetric bias, the obtained dephasing rate coincided with that obtained by the perturbation method using the spectral weight of a boson thermal bath, which is proportional to the inverse of the frequency.
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the qubits and identify optimal bias points for single- and two-qubit operations, as well as convenient idle positions. The same intuitive formulation is used to derive dephasing rates of these qubits due to the fluctuating charge environment, thereby providing the main considerations for a quantum computation architecture that is within current experimental capabilities.
We investigate the behavior of qubits consisting of three electron spins in double and triple quantum dots subject to external electric fields. Our model includes two independent bias parameters, $\ensuremath{\varepsilon}$ and ${\ensuremath{\varepsilon}}_{M}$, which both couple to external electromagnetic fields and can be controlled by gate voltages applied to the quantum dot structures. By varying these parameters, one can switch the qubit type by shifting the energies in the single quantum dots, thus changing the electron occupancy in each dot. Starting from the asymmetric resonant exchange qubit with a (2,0,1) and (1,0,2) charge admixture, one can smoothly cross over to the resonant exchange qubit with a detuned (1,1,1) charge configuration, and to the exchange-only qubit with the same charge configuration but equal energy levels down to the hybrid qubits with (1,2,0) and (0,2,1) charge configurations. Here,
(l,m,n) describes a configuration with
l electrons in the left dot,
m electrons in the center dot, and
n electrons in the right dot. We first focus on random electromagnetic field fluctuations, i.e., ``charge noise,'' at each quantum dot resulting in dephasing of the qubit, and we provide a complete map of the resulting dephasing time as a function of the bias parameters. We pay special attention to the so-called sweet spots and double sweet spots of the system, which are least susceptible to noise. In the second part, we investigate the coupling of the qubit system to the coherent quantized electromagnetic field in a superconducting strip-line cavity, and we also provide a complete map of the coupling strength as a function of the bias parameters. We analyze the asymmetric qubit-cavity coupling via $\ensuremath{\varepsilon}$ and the symmetric coupling via ${\ensuremath{\varepsilon}}_{M}$.
Lateral semiconductor quantum dot structures have been proposed as an effective quantum bit (qubit) for quantum computation. A single excess electron with the freedom to move between two capacitively coupled quantum dots creates a `pseudo'-spin system with the same qubit behavior as the more natural two level system of a single electron spin. The excess electron in the double dot system is restricted to one of the two dots, thereby creating two separate and distinct states (usually referred to as |L> and |R>). The benefit of these charge qubits lie in the relative ease with which they can be manipulated and created. Experiments have been performed in this area and have shown controllable coherent oscillations and thus efficient single-qubit operations. However, the decoherence rates observed in the experiments is still quite high, making double dot charge qubits not very appealing for large-scale implementations. The following work describes the effect of the electromagnetic (EM) environment of the double quantum dot system on the decoherence of the charge state. Sources of decoherence in similar systems have been extensively investigated before and this paper follows a close theoretical framework to previous work done in the area. The effect of the EM environment can been seen in the calculations discussed below, although it is clear that the decoherence seen in experiments cannot be fully explained by the voltage fluctuations as they are investigated here. The limitations of the calculations are discussed and improvements are suggested.
Quantum information and quantum computation implementation in terms of electron charges and spin has attracted tremendous attention for the development of large-scale quantum information processing [1-5]. Artificial and tunable charge qubits fabricated in a semiconductor nanostructure are suitable for the purpose, since various parameters can be controlled by external gate voltages [6,7]. The rapid control of external gate voltage in two-electron double quantum dots has been demonstrated [8,9].Entanglement has recently emerged as a significant resource in quantum information and other applications. However an important problem is to ensure the robustness of this resource; that is, the ability to maintain it against decay. Decoherence is one of the fundamental limitation in quantum information science, and the understanding and the control of its dynamics appears as a crucial issue for the development of quantum information devices.For charge qubits in quantum dots, the effects of phonons and electromagnetic and background charge fluctuations are important in the decoherence process. The effect of phonons on the dynamics of two charge qubits has been examined [10,11].In this work, we analyze the effect of telegraph noise on the dynamical of two electrons in laterally coupled quantum dots. The resulting qubit is supposed to evolve in the basis spanned by the states |0〉 and |1〉 which describe the electron localized in the left and right dot respectively. We investigate theoretically the quantum dynamics of two interacting electrons driven by an oscillatory electric field. In order to study the effect of the telegraph noise on the entanglement we adopt the concurrence.