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Research in Optical Sciences

Effect of Telegraph Noise on the Entanglement of Two Charge Gubits

A. Ayachi

Published Jan 1, 2012• 0 citations
Publisher

Abstract

Quantum information and quantum computation implementation in terms of electron charges and spin has attracted tremendous attention for the development of large-scale quantum information processing [1-5]. Artificial and tunable charge qubits fabricated in a semiconductor nanostructure are suitable for the purpose, since various parameters can be controlled by external gate voltages [6,7]. The rapid control of external gate voltage in two-electron double quantum dots has been demonstrated [8,9].Entanglement has recently emerged as a significant resource in quantum information and other applications. However an important problem is to ensure the robustness of this resource; that is, the ability to maintain it against decay. Decoherence is one of the fundamental limitation in quantum information science, and the understanding and the control of its dynamics appears as a crucial issue for the development of quantum information devices.For charge qubits in quantum dots, the effects of phonons and electromagnetic and background charge fluctuations are important in the decoherence process. The effect of phonons on the dynamics of two charge qubits has been examined [10,11].In this work, we analyze the effect of telegraph noise on the dynamical of two electrons in laterally coupled quantum dots. The resulting qubit is supposed to evolve in the basis spanned by the states |0〉 and |1〉 which describe the electron localized in the left and right dot respectively. We investigate theoretically the quantum dynamics of two interacting electrons driven by an oscillatory electric field. In order to study the effect of the telegraph noise on the entanglement we adopt the concurrence.

DOI
10.1364/hilas.2012.jt2a.11

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Quantum information and quantum computation implementation in terms of electron charges and spin has attracted tremendous attention for the development of large-scale quantum information processing [1-5]. Artificial and tunable charge qubits fabricated in a semiconductor nanostructure are suitable for the purpose, since various parameters can be controlled by external gate voltages [6,7]. The rapid control of external gate voltage in two-electron double quantum dots has been demonstrated [8,9].Entanglement has recently emerged as a significant resource in quantum information and other applications. However an important problem is to ensure the robustness of this resource; that is, the ability to maintain it against decay. Decoherence is one of the fundamental limitation in quantum information science, and the understanding and the control of its dynamics appears as a crucial issue for the development of quantum information devices.For charge qubits in quantum dots, the effects of phonons and electromagnetic and background charge fluctuations are important in the decoherence process. The effect of phonons on the dynamics of two charge qubits has been examined [10,11].In this work, we analyze the effect of telegraph noise on the dynamical of two electrons in laterally coupled quantum dots. The resulting qubit is supposed to evolve in the basis spanned by the states |0〉 and |1〉 which describe the electron localized in the left and right dot respectively. We investigate theoretically the quantum dynamics of two interacting electrons driven by an oscillatory electric field. In order to study the effect of the telegraph noise on the entanglement we adopt the concurrence.
We analyze theoretically the decoherence of two interacting electrons in a double self-assembled quantum dot due to a random telegraph noise. For this purpose we have examined the pure dephasing rate by evaluating the decoherence factor. The latter has been shown to be different from that calculated within the Gaussian approximation in the strong coupling regime. In order to determine the influence of the random telegraph noise on the entanglement of the system states, the concurrence, the populations, and the entropy are evaluated as well. Our results show that telegraph noise can severely impact the coherence of charge qubits.
The decoherence dynamics of two charge qubits in a double quantum dot is investigated theoretically. We consider the quantum dynamics of two interacting electrons in a vertically coupled quantum dot driven by an external electric field. We derive the equations of motion for the density matrix, in which the presence of an electron confined in the double dot represents one qubit. A Markovian approach to the dynamical evolution of the reduced density matrix is adopted. We evaluate the concurrence of two qubits in order to study the effect of acoustic phonons on the entanglement. We also show that the disentanglement effect depends on the double dot parameters and increases with the temperature.
Lateral semiconductor quantum dot structures have been proposed as an effective quantum bit (qubit) for quantum computation. A single excess electron with the freedom to move between two capacitively coupled quantum dots creates a `pseudo'-spin system with the same qubit behavior as the more natural two level system of a single electron spin. The excess electron in the double dot system is restricted to one of the two dots, thereby creating two separate and distinct states (usually referred to as |L> and |R>). The benefit of these charge qubits lie in the relative ease with which they can be manipulated and created. Experiments have been performed in this area and have shown controllable coherent oscillations and thus efficient single-qubit operations. However, the decoherence rates observed in the experiments is still quite high, making double dot charge qubits not very appealing for large-scale implementations. The following work describes the effect of the electromagnetic (EM) environment of the double quantum dot system on the decoherence of the charge state. Sources of decoherence in similar systems have been extensively investigated before and this paper follows a close theoretical framework to previous work done in the area. The effect of the EM environment can been seen in the calculations discussed below, although it is clear that the decoherence seen in experiments cannot be fully explained by the voltage fluctuations as they are investigated here. The limitations of the calculations are discussed and improvements are suggested.
In quantum computation, quantum coherence must be maintained during gate operation. However, in physical implementations, various couplings with the environment are unavoidable and can lead to a dephasing of a quantum bit (qubit). The background charge fluctuations are an important dephasing process, especially in a charge qubit system. We examined the dephasing rate of a qubit due to random telegraph noise. Solving stochastic differential equations, we obtained the dephasing rate of a qubit constructed of a coupled-dot system; we applied our results to the charge Josephson qubit system. We examined the dephasing rates due to two types of couplings between the coupled-dot system and the background charge, namely, fluctuation in the tunnel coupling constant and fluctuation in the asymmetric bias. For a strong-coupling condition, the dephasing rate was inversely proportional to the time constant of the telegraph noise. When there is fluctuation in the tunnel coupling constant, Gaussian decay occurs in the initial regime. We also examined the rate of dephasing due to many impurity sites. For a weak-coupling condition with fluctuation in the asymmetric bias, the obtained dephasing rate coincided with that obtained by the perturbation method using the spectral weight of a boson thermal bath, which is proportional to the inverse of the frequency.
PACS. 73.23.-b – Electronic transport in mesoscopic systems. Abstract. – We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can be efficiently generated and controlled by sidegate voltages, and describe how it can be detected. For large enough tunnel coupling, the negativity shows a pronounced maximum at an intermediate interaction strength within the Wigner molecule regime. Semiconductor few-electron quantum dots (QDs) continue to attract a lot of interest, as it has now become possible to experimentally control both the electronic spin and charge in a condensed-phase environment in an unprecedented manner. In particular, double quantum dots (DQDs) can be fabricated in a well-controlled fashion in high-quality semiconductor devices, and are currently under intense study [1–9]. Vertical or lateral tunnel-coupled DQDs are among the most promising candidates for realizing spin or charge qubits in a quantum information processor [10–12]. Their main advantages are scalability, good control of physical properties via tunable external (sidegate-) voltages or magnetic fields, and spatial separation
Long-distance transfer of quantum information in architectures based on quantum dot spin qubits will be necessary for their scalability. One way of achieving this goal is to simply move the electron between two quantum registers. Precise control over the process of shuttling such a single electron through a chain of tunnel-coupled quantum dots is possible when interdot energy detunings are changed adiabatically. The deterministic character of shuttling is, however, endangered by the open nature of the system, as the transferred electron is coupled to thermal reservoirs: sources of fluctuations of electric fields and lattice vibrations. We present a comprehensive analysis showing how the electron transfer between two voltage-controlled quantum dots is affected by electron-phonon scattering and interaction with sources of 1/f1/f1/f and Johnson charge noise in both detuning and tunnel coupling. The electron-phonon scattering turns out to be irrelevant in Si quantum dots, with charge noise dominating the dynamics of the system at slow detuning sweep, when the electron spends more time delocalized between the dots (i.e., near the anticrossing of the tunnel-coupled states). Competition between the effects of charge noise and the Landau-Zener effect leads to an existence of an optimal detuning sweep rate, leading to minimal probability of leaving the electron behind. In GaAs quantum dots, on the other hand, piezoelectric coupling to phonons is strong enough to make the processes of interdot transfer assisted by phonon emission and absorption dominate over transitions caused by charge noise. The probability of leaving the electron behind then depends monotonically on detuning the sweep rate over a broad range of rates, and values much smaller than in silicon can be obtained for slow sweeps. However, after taking into account limitations on transfer time imposed by the need for preservation of a shuttled electron's spin coherence, the minimal probabilities of leaving the electron behind in both GaAs- and Si-based double quantum dots turn out to be of the same order of magnitude. Bringing them down below ${10}^{\ensuremath{-}3}$ requires temperatures $\ensuremath{\le}100$ mK and tunnel couplings above $20\phantom{\rule{4pt}{0ex}}\ensuremath{\mu}\mathrm{eV}$.