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Journal of International Crisis and Risk Communication Research

Decoherence In Quantum Dot Charge Qubits: The Role Of Electromagnetic Fluctuations

James M. McCracken

Published Jan 1, 2006• 0 citations
OpenAlex

Abstract

Lateral semiconductor quantum dot structures have been proposed as an effective quantum bit (qubit) for quantum computation. A single excess electron with the freedom to move between two capacitively coupled quantum dots creates a `pseudo'-spin system with the same qubit behavior as the more natural two level system of a single electron spin. The excess electron in the double dot system is restricted to one of the two dots, thereby creating two separate and distinct states (usually referred to as |L> and |R>). The benefit of these charge qubits lie in the relative ease with which they can be manipulated and created. Experiments have been performed in this area and have shown controllable coherent oscillations and thus efficient single-qubit operations. However, the decoherence rates observed in the experiments is still quite high, making double dot charge qubits not very appealing for large-scale implementations. The following work describes the effect of the electromagnetic (EM) environment of the double quantum dot system on the decoherence of the charge state. Sources of decoherence in similar systems have been extensively investigated before and this paper follows a close theoretical framework to previous work done in the area. The effect of the EM environment can been seen in the calculations discussed below, although it is clear that the decoherence seen in experiments cannot be fully explained by the voltage fluctuations as they are investigated here. The limitations of the calculations are discussed and improvements are suggested.

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Lateral semiconductor quantum dot structures have been proposed as an effective quantum bit (qubit) for quantum computation. A single excess electron with the freedom to move between two capacitively coupled quantum dots creates a `pseudo'-spin system with the same qubit behavior as the more natural two level system of a single electron spin. The excess electron in the double dot system is restricted to one of the two dots, thereby creating two separate and distinct states (usually referred to as |L> and |R>). The benefit of these charge qubits lie in the relative ease with which they can be manipulated and created. Experiments have been performed in this area and have shown controllable coherent oscillations and thus efficient single-qubit operations. However, the decoherence rates observed in the experiments is still quite high, making double dot charge qubits not very appealing for large-scale implementations. The following work describes the effect of the electromagnetic (EM) environment of the double quantum dot system on the decoherence of the charge state. Sources of decoherence in similar systems have been extensively investigated before and this paper follows a close theoretical framework to previous work done in the area. The effect of the EM environment can been seen in the calculations discussed below, although it is clear that the decoherence seen in experiments cannot be fully explained by the voltage fluctuations as they are investigated here. The limitations of the calculations are discussed and improvements are suggested.
In this dissertation we discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes and electromagnetic environmental fluctuations. In the case of decoherence caused by phonon coupling, two distinct quantum dot configurations are studied and proposed as setups that mitigate its nocive effects : (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to a previous proposal involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have Q factors much higher than those obtained for double-dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit. We also discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use effective circuit models to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1) and phase (T2) relaxation times of the the qubit system. We also discuss the dependence the quality factor Q shows with respect to parameters of the setup, such as temperature and capacitive coupling between the electrodes.
We discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes. Two distinct quantum dot configurations are studied: (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to a previous proposal involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have QQQ factors much higher than those obtained for double-dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit.
We discuss decoherence due to electromagnetic fluctuations in charge qubits formed by two lateral quantum dots. We use effective circuit model to evaluate correlations of voltage fluctuations in the qubit setup. These correlations allows us to estimate energy (T1)({T}_{1})(T1​) and phase (T2)({T}_{2})(T2​) relaxation times of the qubit system. Our theoretical estimate of the quality factor due to dephasing by electromagnetic fluctuations yields values much higher than those found in recent experiments, indicating that other sources of decoherence play a dominant role.
The spin of an electron confined into a lateral semiconductor quantum dot has been proposed as a possible physical realization of a qubit. While the spin has the advantage of large decoherence times, operations with more than one qubit will necessarily involve orbital degrees of freedom, namely, charge, which is much more prone to decoherence. There are also alternative quantum dot qubit proposals that are entirely based on charge. We have used a realistic model to quantify the limitations imposed by acoustic phonons on the operation of quantum dot-based qubits. Our treatment includes essential aspects of the setup geometry, wave function profile and materials characteristics. The time dependence of the qubit density matrix is the presence of a phonon bath solved within the Born-Markov approximation. We find that the inclusion of geometric form factors makes the phonon-induced decoherence rates in double dot charge qubits nearly one order of magnitude lower than estimates previously in the literature. Moreover, our theoretical prediction for the quality factor of coherent charge oscillations based on phonon decoherence are higher than the values recently observed experimentally. This allows us to conclude that phonons are not the primary source of decoherence in double quantum dot qubits.
Quantum information and quantum computation implementation in terms of electron charges and spin has attracted tremendous attention for the development of large-scale quantum information processing [1-5]. Artificial and tunable charge qubits fabricated in a semiconductor nanostructure are suitable for the purpose, since various parameters can be controlled by external gate voltages [6,7]. The rapid control of external gate voltage in two-electron double quantum dots has been demonstrated [8,9].Entanglement has recently emerged as a significant resource in quantum information and other applications. However an important problem is to ensure the robustness of this resource; that is, the ability to maintain it against decay. Decoherence is one of the fundamental limitation in quantum information science, and the understanding and the control of its dynamics appears as a crucial issue for the development of quantum information devices.For charge qubits in quantum dots, the effects of phonons and electromagnetic and background charge fluctuations are important in the decoherence process. The effect of phonons on the dynamics of two charge qubits has been examined [10,11].In this work, we analyze the effect of telegraph noise on the dynamical of two electrons in laterally coupled quantum dots. The resulting qubit is supposed to evolve in the basis spanned by the states |0〉 and |1〉 which describe the electron localized in the left and right dot respectively. We investigate theoretically the quantum dynamics of two interacting electrons driven by an oscillatory electric field. In order to study the effect of the telegraph noise on the entanglement we adopt the concurrence.
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97>97%>97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 9191%91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.