Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:cond-mat/0106650 · Physical Review Letters

Full Frequency Back-Action Spectrum of a Single-Electron Transistor during Qubit Readout

Göran Johansson, Andreas Käck, Goran P. Wendin

Published Jan 10, 2002• 60 citations
arXivHTMLPDF

Abstract

We calculate the spectral density of voltage fluctuations in a single-electron transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency shot noise to quantum noise at frequencies comparable to the SET charging energy (EC/h) is considered. We discuss the back-action during readout of a charge qubit and conclude that single-shot readout is possible using the radio-frequency SET.

DOI
10.1103/physrevlett.88.046802

Related papers

Full-frequency voltage noise spectral density of a single-electron transistor

Andreas Käck, Goran P. Wendin, Göran Johansson

We calculate the full-frequency spectral density of voltage fluctuations in a single-electron transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunneling events. We consider both a normal-state SET and a superconducting SET. The whole spectrum, from low-frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy ${(E}_{C}/\ensuremath{\Elzxh})$ to high-frequency Nyquist noise, is described. We take the energy exchange between the SET and the measured system into account using a real-time diagrammatic Keldysh technique. The voltage fluctuations determine the backaction of the SET on the measured system, and we specifically discuss the case of superconducting charge qubit read-out and measuring the so-called Coulomb staircase of a single Cooper-pair box.

arXiv:cond-mat/0211055•Physical review. B, Condensed matter•Jan 6, 2003•26 citations

Reading Out Charge Qubits with a Radio-Frequency Single-Electron-Transistor

Kevin Bladh, David Gunnarsson, Göran Johansson +6 more

We describe fabrication and measurements of Single Electron Transistors operated in the Radio Frequency mode (RF-SET). We demonstrate very high sensitivity for RF-SETs and we evaluate the back-action from an RF-SET, when used as a read-out device for charge qubits. We conclude that single-shot read-out is possible with a signal to noise ratio greater than one, and that niobium qubits would substantially improve the signal to noise ratio. Furthermore we describe how the RF-SET could be used to read out a differential qubit in a gradiometer coupling.

Physica Scripta•Jan 1, 2002•16 citations

Double quantum dot coupled to a radio-frequency single-electron transistor: Quantum measurement and back action

Madhu Thalakulam

The radio-frequency superconducting single electron transistor (RF-SET) is a highly sensitive and fast electrometer operating near the quantum limit. The back-action current noise of the SET induces voltage fluctuations on the system it is coupled to, dephasing its charge states. Here we propose to study the back action of the RF-SET by means of a double quantum dot (DQD) and, an RF-SET electrostatically coupled to one of the two dots. The inelastic current through the DQD is very sensitive to the spectral density of the voltage fluctuations in the nearby environment. By properly choosing the dot size and inter-dot tunnel barrier thickness, one can cause inelastic process to dominate the transport processes. A measurement of the inelastic current through the double dot system can then be used to calculate the spectral density of noise associated with the RF-SET and hence its back action. The design, fabrication and characterization of an RF-SET/DQD system is discussed in this work. Real-time studies of electron dynamics in coupled dots are also addressed.

•Jan 1, 2004•0 citations

Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise

Tilo M. Buehler, D. J. Reilly, R.P. Starrett +4 more

The radio-frequency single-electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1∕f and telegraph charge noise. For a typical spectrum of 1∕f noise we find that high fidelity, single-shot measurements are possible for signals Δq>0.01e. For the case of telegraph noise, we present a cross-correlation measurement technique that uses two rf-SETs to suppress the effect of random switching events on readout. We demonstrate this technique by monitoring the charge state of a metal double dot system on microsecond time scales. Such a scheme will be advantageous in achieving high readout fidelity in a solid-state quantum computer.

arXiv:cond-mat/0304384•Applied Physics Letters•Mar 31, 2005•39 citations

Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and Backaction

A. Aassime, Göran Johansson, Goran P. Wendin +2 more

We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3microe/sqrt[Hz] and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.

Physical Review Letters•Apr 9, 2001•218 citations

Development and study of charge sensors for fast charge detection in quantum dots

Madhu Thalakulam

Charge detection at microsecond time-scales has far reaching consequences in both technology and in our understanding of electron dynamics in nanoscale devices such as quantum dots. Radio-frequency superconducting single electron transistors (RF-SET) and quantum point contacts (QPC) are ultra sensitive charge sensors operating near the quantum limit. The operation of RF-SETs outside the superconducting gap has been a topic of study; the sub-gap operation, especially in the presence of large quantum fluctuations of quasiparticles remains largely unexplored, both theoretically and experimentally. We have investigated the effects of quantum fluctuations of quasiparticles on the operation of RF-SETs for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, sub-gap RF-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.\nWe have operated a QPC charge detector in a radio frequency mode that allows fast charge detection in a bandwidth of several megahertz. The noise limiting the sensitivity of the charge detector is not the noise of a secondary amplifier, but the non-equilibrium device noise of the QPC itself. The noise power averaged over a measurement bandwidth of about 10MHz around the carrier frequency is in agreement with the theory of photon-assisted shot noise. Frequency-resolved measurements, however show several significant discrepancies with the theoretical predictions. The measurement techniques developed can also be used to investigate the noise of other semiconductor nanostructures such as quantum dots in the Kondo regime.\nA study of the noise characteristics alone can not determine whether the device is operating at the quantum limit; a characterization of back action is also necessary. The inelastic current through a double quantum dot system (DQD) is sensitive to the spectral density of voltage fluctuations in its electromagnetic environment. Electrical transport studies on a DQD system electrostatically coupled to an SET shows qualitative evidence of back-action of SET. The design and fabrication of a few electron DQD device with integrated RF-SET and QPC charge sensors for the study of back action of the sensors and real-time electron dynamics in the DQD are also discussed.

•Jan 1, 2007•0 citations
We calculate the spectral density of voltage fluctuations in a single-electron transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency shot noise to quantum noise at frequencies comparable to the SET charging energy (EC/h) is considered. We discuss the back-action during readout of a charge qubit and conclude that single-shot readout is possible using the radio-frequency SET.
We calculate the full-frequency spectral density of voltage fluctuations in a single-electron transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunneling events. We consider both a normal-state SET and a superconducting SET. The whole spectrum, from low-frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy ${(E}_{C}/\ensuremath{\Elzxh})$ to high-frequency Nyquist noise, is described. We take the energy exchange between the SET and the measured system into account using a real-time diagrammatic Keldysh technique. The voltage fluctuations determine the backaction of the SET on the measured system, and we specifically discuss the case of superconducting charge qubit read-out and measuring the so-called Coulomb staircase of a single Cooper-pair box.
We describe fabrication and measurements of Single Electron Transistors operated in the Radio Frequency mode (RF-SET). We demonstrate very high sensitivity for RF-SETs and we evaluate the back-action from an RF-SET, when used as a read-out device for charge qubits. We conclude that single-shot read-out is possible with a signal to noise ratio greater than one, and that niobium qubits would substantially improve the signal to noise ratio. Furthermore we describe how the RF-SET could be used to read out a differential qubit in a gradiometer coupling.
The radio-frequency superconducting single electron transistor (RF-SET) is a highly sensitive and fast electrometer operating near the quantum limit. The back-action current noise of the SET induces voltage fluctuations on the system it is coupled to, dephasing its charge states. Here we propose to study the back action of the RF-SET by means of a double quantum dot (DQD) and, an RF-SET electrostatically coupled to one of the two dots. The inelastic current through the DQD is very sensitive to the spectral density of the voltage fluctuations in the nearby environment. By properly choosing the dot size and inter-dot tunnel barrier thickness, one can cause inelastic process to dominate the transport processes. A measurement of the inelastic current through the double dot system can then be used to calculate the spectral density of noise associated with the RF-SET and hence its back action. The design, fabrication and characterization of an RF-SET/DQD system is discussed in this work. Real-time studies of electron dynamics in coupled dots are also addressed.
The radio-frequency single-electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1∕f and telegraph charge noise. For a typical spectrum of 1∕f noise we find that high fidelity, single-shot measurements are possible for signals Δq>0.01e. For the case of telegraph noise, we present a cross-correlation measurement technique that uses two rf-SETs to suppress the effect of random switching events on readout. We demonstrate this technique by monitoring the charge state of a metal double dot system on microsecond time scales. Such a scheme will be advantageous in achieving high readout fidelity in a solid-state quantum computer.
We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3microe/sqrt[Hz] and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.
Charge detection at microsecond time-scales has far reaching consequences in both technology and in our understanding of electron dynamics in nanoscale devices such as quantum dots. Radio-frequency superconducting single electron transistors (RF-SET) and quantum point contacts (QPC) are ultra sensitive charge sensors operating near the quantum limit. The operation of RF-SETs outside the superconducting gap has been a topic of study; the sub-gap operation, especially in the presence of large quantum fluctuations of quasiparticles remains largely unexplored, both theoretically and experimentally. We have investigated the effects of quantum fluctuations of quasiparticles on the operation of RF-SETs for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, sub-gap RF-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.\nWe have operated a QPC charge detector in a radio frequency mode that allows fast charge detection in a bandwidth of several megahertz. The noise limiting the sensitivity of the charge detector is not the noise of a secondary amplifier, but the non-equilibrium device noise of the QPC itself. The noise power averaged over a measurement bandwidth of about 10MHz around the carrier frequency is in agreement with the theory of photon-assisted shot noise. Frequency-resolved measurements, however show several significant discrepancies with the theoretical predictions. The measurement techniques developed can also be used to investigate the noise of other semiconductor nanostructures such as quantum dots in the Kondo regime.\nA study of the noise characteristics alone can not determine whether the device is operating at the quantum limit; a characterization of back action is also necessary. The inelastic current through a double quantum dot system (DQD) is sensitive to the spectral density of voltage fluctuations in its electromagnetic environment. Electrical transport studies on a DQD system electrostatically coupled to an SET shows qualitative evidence of back-action of SET. The design and fabrication of a few electron DQD device with integrated RF-SET and QPC charge sensors for the study of back action of the sensors and real-time electron dynamics in the DQD are also discussed.