Measurements are made on superconducting Niobium on Sapphire and oxidized Silicon microwave coplanar resonators for quantum bit experiments. Device geometry and materials are investigated and quality factors in excess of a million have been observed. The resonant frequency as a function of temperature of a coplanar resonator is characterised in terms of the change in the number density of superconducting electrons. At lower temperatures, the resonant frequency no longer follows this function, and evidence is shown that this is associated with the resonant coupling of the resonant frequency with two level systems in the substrate. At T<2.2 K the resonant frequency scales logarithmically with the temperature, indicating that two level systems distributed in the volume of the Silicon Dioxide affect the electric permittivity. Applying higher input microwave power levels is shown to saturate these two level systems, essentially decoupling them from the CPR resonance. This is observed as an increase in resonant frequency and Q factor. The resonant frequency is also shown to have a high sensitivity to a magnetic field applied perpendicular to the plane of the coplanar resonator, with a quadratic dependence for the fundamental, second and third harmonics. Frequency shift of hundreds of linewidths are obtained. Coplanar resonator are fabricated and measured with current control lines built on chip, and these have shown to produce frequency shifts of tens of Kilohertz.
Measurements are made on superconducting Niobium on Sapphire and oxidized Silicon microwave coplanar resonators for quantum bit experiments. Device geometry and materials are investigated and quality factors in excess of a million have been observed. The resonant frequency as a function of temperature of a coplanar resonator is characterised in terms of the change in the number density of superconducting electrons. At lower temperatures, the resonant frequency no longer follows this function, and evidence is shown that this is associated with the resonant coupling of the resonant frequency with two level systems in the substrate. At T<2.2 K the resonant frequency scales logarithmically with the temperature, indicating that two level systems distributed in the volume of the Silicon Dioxide affect the electric permittivity. Applying higher input microwave power levels is shown to saturate these two level systems, essentially decoupling them from the CPR resonance. This is observed as an increase in resonant frequency and Q factor. The resonant frequency is also shown to have a high sensitivity to a magnetic field applied perpendicular to the plane of the coplanar resonator, with a quadratic dependence for the fundamental, second and third harmonics. Frequency shift of hundreds of linewidths are obtained. Coplanar resonator are fabricated and measured with current control lines built on chip, and these have shown to produce frequency shifts of tens of Kilohertz.
We describe measurements on microwave coplanar resonators designed for quantum bit experiments. Resonators have been patterned onto sapphire and silicon substrates, and quality factors in excess of a million have been observed. The resonant frequency shows a high sensitivity to magnetic field applied perpendicular to the plane of the film, with a quadratic dependence for the fundamental, second, and third harmonics. Frequency shift of hundreds of linewidths can be obtained with no change in the quality factor.
The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material candidate for applications in superconducting quantum technology. However, NbN-based devices and circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays, with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor (Qi) decreases from Qi ~ 1.07*10^6 in a high power regime (< nph > = 27000) to Qi ~ 1.36 *10^5 in single photon regime at temperature T = 100 mK. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature dependence internal quality factor and frequency tuning of the coplanar waveguide resonators to characterise the quasiparticle density of NbN. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measure the resonators' resonance frequency and internal quality factor at single photon regime in response to in-plane magnetic fields B||. We verify that Qi stays well above 10^4 up to B|| = 240 mT in the photon number < nph > = 1.8 at T = 100 mK. Our results may pave the way for realising robust microwave superconducting circuits for circuit quantum electrodynamics (cQED) at high magnetic fields necessary for fault-tolerant quantum computing, and ultrasensitive quantum sensing.
The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material for applications in superconducting quantum technology. However, NbN-based superconducting circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor (Qi) decreases fromQi∼1.07×106in a high power regime toQi∼1.36×105in the single photon regime. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature (T) dependence ofQiand resonance frequencyfrof coplanar waveguide resonators to characterize the quasiparticle density. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measurefrandQiin response to in-plane magnetic fields (B∣∣). We verify thatQistays well above104up toB∣∣= 240 mT in the photon number<nph>= 1.8 atT= 100 mK. Our results could enable the development of robust microwave superconducting circuits for circuit quantum electrodynamics at high magnetic fields required for hybrid superconducting-semiconducting quantum circuits.
High quality on-chip microwave resonators have recently found prominent new applications in quantum optics and quantum information processing experiments with superconducting electronic circuits, a field now known as circuit quantum electrodynamics (QED). They are also used as single photon detectors and parametric amplifiers. Here we analyze the physical properties of coplanar waveguide resonators and their relation to the materials properties for use in circuit QED. We have designed and fabricated resonators with fundamental frequencies from 2 to 9 GHz and quality factors ranging from a few hundreds to a several hundred thousands controlled by appropriately designed input and output coupling capacitors. The microwave transmission spectra measured at temperatures of 20 mK are shown to be in good agreement with theoretical lumped element and distributed element transmission matrix models. In particular, the experimentally determined resonance frequencies, quality factors, and insertion losses are fully and consistently explained by the two models for all measured devices. The high level of control and flexibility in design renders these resonators ideal for storing and manipulating quantum electromagnetic fields in integrated superconducting electronic circuits.
We successfully designed and fabricated an absorption-type of superconducting coplanar waveguide (CPW) resonators. The resonators are made from a niobium film (about 160 nm thick) on a high-resistance Si substrate, and each resonator is fabricated as a meandered quarter-wavelength transmission line (one end is short to the ground and another end is capacitively coupled to a through feedline). With a vector network analyzer we measured the transmissions of the applied microwave through the resonators at ultra-low temperature. The obtained loaded quality factors are significantly high, i.e. up to ∼10 6 . When the temperature increases slowly from the base temperature (20 mK), the resonance frequencies of the resonators are blue shifted and the quality factors are lowered slightly. In principle, this type of device can integrate a series of CPW resonators with a common feedline, making it a promising candidate as the data bus for coupling distant solid-state qubits and the sensitive detector of single photons.
In this master's thesis, I present the design, fabrication, and characterisation of superconducting microwave resonators. These resonators are quarter-wavelength coplanar waveguide resonators, operating at resonance frequencies between 4 GHz and 8 GHz. This kind of resonator is a key component in several applications, ranging from quantum computation devices to parametric amplifiers. Minimising the losses (achieving high internal quality factors) in these resonators is important to maximise performance of the applications they are used for. During the thesis work, we have studied several possible changes to improve the resonator quality.\n\nFabrication of the resonators was done in the Nanofabrication Laboratory at Chalmers University of Technology, and consist of the following steps: cleaning a sapphire or silicon wafer, depositing a layer of superconducting niobium, photolithography, and etching the waveguide. We then measured the resonators in a cryogen-free dilution refrigerator, at a temperature of 10 mK. The measurements consisted of a power sweep, in order to quantify the quality factor at high and low excitation powers. As an example, the first resonator we fabricated had a quality factor of 4.3 x 10^4 at high power (about 10^5 photons in the resonator), and quality factor of 3.7 x 10^4 at the single-photon level.\n\nWe then investigated different loss mechanisms that we expect to negatively affect the quality factor, and how to reduce this loss. Firstly, to reduce radiation losses and magnetic vortex losses, we reduced the lateral dimensions of the resonator. Secondly, as two-level system (TLS) losses are believed to mainly reside at the surfaces of the materials and interfaces between them, we etched into the substrate to selectively move a part of the TLS away from the resonator. We also studied the effect of the meandering of the resonator on the quality factor, as well as using two different etching gasses.\n\nBy gathering all this data, we were then able to compare the different combinations to see the effect of the changing parameters. In conclusion, the reduced lateral dimensions and the removal of part of the substrate indeed reduce the losses, as expected from the theory. We also found interesting behaviour with regards to the meandering, namely that having a meandered structure negatively affects the quality factor.\n\nCombining all results, we can give a guideline for the fabrication of resonators in the future, which gave us a quality factor up to 4.9 x 10^5 at high excitation power, and 3.0 x 10^5 at the single photon level.