© 2026 Aqora Quantum S.A.S.

Terms Privacy Legal Notice

Superconductor Science and Technology

A double-active-layer NB-based fabrication process for superconducting digital integrated circuits

Mingfan Chen, Shucheng Yang, Liliang Ying, Maoxiang Chen, Lijuan Li, Linxian Ma, Hui Xie, Weifeng SHI, Feng Zhou, Jie Ren

Published Sep 30, 2026• 0 citations

Abstract

Abstract We present SIMIT-Nb08, an eight-layer Nb-based fabrication process for double-active-layer single-flux-quantum (SFQ) digital circuits, aimed at overcoming the routing congestion and integration ‘density wall’ of planar SFQ designs. Both Nb/Al–AlO x /Nb JJ layers were designed with the same nominal critical current density of J c = 6 kA cm −2 , and the measured values were 6.15 and 6.26 kA cm −2 for the lower and upper JJ layers, respectively. This architecture incorporates a dual-ground-plane structure to reduce interlayer electromagnetic coupling and shield stray magnetic flux generated by bias lines. A stop-on-metal chemical mechanical polishing module was implemented to provide a controlled dielectric thickness and a planar surface for upper-layer device fabrication. We validate a double-layer SFQ logic cell library with wide DC bias margins on both layers, and demonstrate ultra-high-speed dynamic operation via a toggle flip-flop-based frequency-divider test exceeding 100 GHz. In addition, the process and cross-layer interconnect reliability are demonstrated by functional operation of a cross-layer one-bit full adder and an eight-bit shift register (SR), where the SR exhibits an effective junction-density improvement of ∼4× over typical single-layer implementations. Post-route benchmarking on a 320-cell SR indicates that SIMIT-Nb08 delivers substantial improvements in power, performance, and area, including a 32.2% reduction in area, a 25.0% increase in maximum operating frequency ( f max ), and a 65.3% reduction in estimated power compared with SIMIT-Nb03 (29.9%, 6.3%, and 62.5%, respectively, compared with SIMIT-Nb04), indicating its potential for routing-constrained SFQ digital circuits.

DOI: 10.1088/1361-6668/aeaeb2

Related papers

Development of 15kA/cm$^2$ Fabrication Process for Superconducting Integrated Digital Circuits

Liliang Ying, Xue Zhang, Guixiang He +7 more

A new fabrication process for superconducting integrated digital circuits is reported. We have developed the "SIMIT Nb04" fabrication technique for superconducting integrated circuits with Nb-based Josephson junctions based on the validated "SIMIT Nb03" process and Chemical Mechanical Planarization (CMP) technology. Seven Nb superconducting layers and one Mo resistor layer are included in the "SIMIT Nb04" process with 19 mask levels. The device structure is composed of active layers including junctions at the bottom, two passive transmission line (PTL) layers in the middle and a DC power layer at the top. The circuit fabrication started with the fabrication of Mo resistors with a target sheet resistance Rsh of 3 $Ω$, followed by the deposition of Nb/Al-AlO$_x$/Nb trilayer Josephson-junction with a target critical current density Jc at 15 kA/cm$^2$. To increase the Al-AlO$_x$ barrier layer etching's repeatability, an additional barrier protection layer was applied. To accomplish high-quality planarization, we created a planarization procedure coupled with dummy filling. To assess the process dependability and controllability, a set of process control monitors (PCMs) for monitoring fabrication and design parameters was designed and monitored. The successful manufacturing and testing of a few small-scale circuits, like our standard library cells, further attests to the viability of our fabrication process for superconducting integrated circuits.

arXiv:2304.01588•Apr 4, 2023•0 citations

Fabrication Process of Planarized Multi-Layer Nb Integrated Circuits

T. Satoh, K. Hinode, Hiroyuki Akaike +3 more

To improve the operating speed and density of Nb single-flux-quantum integrated circuits, we developed an advanced fabrication process based on NEC's standard process. We fabricated planarized six-Nb-layer circuit structures using this advanced process. This new structure has four Nb wiring layers for greater design flexibility. To shield the magnetic field produced by the DC bias current, the DC bias power supply layer was placed under the groundplane. The critical current density of the Josephson junction was 10 kA/cm/sup 2/. We fabricated and tested more than 10 wafers and demonstrated that the six-layer circuits were successfully planarized. We also confirmed insulation between each Nb layer and the reliability of superconducting contacts. This planarization did not significantly degrade the junction characteristics. We measured small spreads in the critical current of less than 2%. These results demonstrated the effectiveness of this advanced process based on mechanical-polishing planarization.

IEEE Transactions on Applied Superconductivity•Jun 1, 2005•42 citations

A 4-Nb-Layer Cell Library Suitable for LSI Superconductor Digital Circuits

Xiaoping Gao, Yuxuan Feng, Minghui Niu +9 more

The increase in the single-flux-quantum (SFQ) circuit scale will cause the overall bias current to increase dramatically. The magnetic field interference caused by the current supplied to the SFQ circuit can no longer be ignored. In addition, more complex SFQ circuits require a cell library for more diversified cell types and a more stable operating range to ensure the circuits’ yield. The SIMIT-Nb03P process is then put forward as a tradeoff between process stability and cost. It is compatible with the Nb03 process and does not need an expensive chemical mechanical planarization process. The added new dc power layer is proved to have less interference by simulation. The conversion from Nb03 to Nb03P cell library was very convenient. In addition, some new cells are designed to meet the requirements of complex SFQ circuits. Test circuits of 20 cells of Nb03P were designed and fabricated and were fully verified at low frequencies. The common bias margin of the whole cell library is (–26%, 20%). A variety of large-scale circuits (up to more than 10 000 Josephson junctions) achieve correct function at high frequencies and show good yields on the wafer. It shows that this updated process is cost efficient and suitable for large-scale integration circuits.

IEEE Transactions on Applied Superconductivity•Jan 15, 2025•4 citations

Planarized Nb 4-Layer Fabrication Process for Superconducting Integrated Circuits and Its Fabricated Device Evaluation

Shuichi Nagasawa, Masamitsu Tanaka, Naoki Takeuchi +13 more

We developed a Nb 4-layer process for fabricating superconducting integrated circuits that involves using caldera planarization to increase the flexibility and reliability of the fabrication process. We call this process the planarized high-speed standard process (PHSTP). Planarization enables us to flexibly adjust most of the Nb and SiO2 film thicknesses; we can select reduced film thicknesses to obtain larger mutual coupling depending on the application. It also reduces the risk of intra-layer shorts due to etching residues at the step-edge regions. We describe the detailed process flows of the planarization for the Josephson junction layer and the evaluation of devices fabricated with PHSTP. The results indicated no short defects or degradation in junction characteristics and good agreement between designed and measured inductances and resistances. We also developed single-flux-quantum (SFQ) and adiabatic quantum-flux-parametron (AQFP) logic cell libraries and tested circuits fabricated with PHSTP. We found that the designed circuits operated correctly. The SFQ shift-registers fabricated using PHSTP showed a high yield. Numerical simulation results indicate that the AQFP gates with increased mutual coupling by the planarized layer structure increase the maximum interconnect length between gates.

IEICE Transactions on Electronics•Mar 16, 2021•6 citations

Zero-Static-Power RSFQ Interconnects via Inductively Biased Unshunted JTLs in a Planarized Double-JJ-Layer Nb Process

Mingfan Chen, Xue Zhang, Junrong Zhao +4 more

To improve circuit density and minimize static power dissipation in Single Flux Quantum (SFQ) circuits, this work investigates the application of inductively biased, unshunted Josephson transmission lines (JTLs) which achieve zero static power, compared with regular resistively biased JTLs. Both simulation and experiment results confirm that unshunted JTLs can reliably propagate SFQ pulses with a bias current margin larger than 50%. Based on this, a new fabrication process has been developed featuring eight niobium (Nb) layers, including two Nb/Al-AlOx/Nb junction layers, a dedicated bias-inductor layer, and dual DC-power layers. The vertical functional separation allows 2 active layers. The 1stactive layer uses conventional shunted JJs for logic gates, while the 2nduses unshunted JTLs with inductive bias. This configuration eliminates static power in the interconnect network and simplifies thermal management in stacked Rapid SFQ (RSFQ) architectures. A ten-stage unshunted JTL chain and a hybrid half-adder were designed and demonstrated. Measurements show a 66.7% reduction in static power and a 64.7% reduction in area compared with the Chinese Academy of Scienceconventional single-JJ-layer process. These results verify, for the first time, that inductively biased unshunted interconnects can be monolithically integrated with standard RSFQ logic, offering a scalable path toward ultra-dense, lower-power multilayer superconducting circuits.

IEEE Transactions on Applied Superconductivity•Mar 23, 2026•2 citations

100 GHz Demonstrations Based on the Single-Flux-Quantum Cell Library for the 10 kA/cm2 Nb Multi-Layer Process

Yuki Yamanashi, Toshiki Kainuma, Nobuyuki Yoshikawa +7 more

A single flux quantum (SFQ) logic cell library has been developed for the 10kA/cm2 Nb multi-layer fabrication process to efficiently design large-scale SFQ digital circuits. In the new cell library, the critical current density of Josephson junctions is increased from 2.5kA/cm2 to 10kA/cm2 compared to our conventional cell library, and the McCumber-Stwart parameter of each Josephson junction is increased to 2 in order to increase the circuit operation speed. More than 300 cells have been designed, including fundamental logic cells and wiring cells for passive interconnects. We have measured all cells and confirmed they stably operate with wide operating margins. On-chip high-speed test of the toggle flip-flop (TFF) cell has been performed by measuring the input and output voltages. The TFF cell at the input frequency of up to 400GHz was confirmed to operate correctly. Also, several fundamental digital circuits, a 4-bit concurrent-flow shift register and a bit-serial adder have been designed using the new cell library, and the correct operations of the circuits have been demonstrated at high clock frequencies of more than 100GHz.

IEICE Transactions on Electronics•Jan 1, 2010•94 citations

Abstract We present SIMIT-Nb08, an eight-layer Nb-based fabrication process for double-active-layer single-flux-quantum (SFQ) digital circuits, aimed at overcoming the routing congestion and integration ‘density wall’ of planar SFQ designs. Both Nb/Al–AlO x /Nb JJ layers were designed with the same nominal critical current density of J c = 6 kA cm −2 , and the measured values were 6.15 and 6.26 kA cm −2 for the lower and upper JJ layers, respectively. This architecture incorporates a dual-ground-plane structure to reduce interlayer electromagnetic coupling and shield stray magnetic flux generated by bias lines. A stop-on-metal chemical mechanical polishing module was implemented to provide a controlled dielectric thickness and a planar surface for upper-layer device fabrication. We validate a double-layer SFQ logic cell library with wide DC bias margins on both layers, and demonstrate ultra-high-speed dynamic operation via a toggle flip-flop-based frequency-divider test exceeding 100 GHz. In addition, the process and cross-layer interconnect reliability are demonstrated by functional operation of a cross-layer one-bit full adder and an eight-bit shift register (SR), where the SR exhibits an effective junction-density improvement of ∼4× over typical single-layer implementations. Post-route benchmarking on a 320-cell SR indicates that SIMIT-Nb08 delivers substantial improvements in power, performance, and area, including a 32.2% reduction in area, a 25.0% increase in maximum operating frequency ( f max ), and a 65.3% reduction in estimated power compared with SIMIT-Nb03 (29.9%, 6.3%, and 62.5%, respectively, compared with SIMIT-Nb04), indicating its potential for routing-constrained SFQ digital circuits.

Development of 15kA/cm

^2

Fabrication Process for Superconducting Integrated Digital Circuits

A new fabrication process for superconducting integrated digital circuits is reported. We have developed the "SIMIT Nb04" fabrication technique for superconducting integrated circuits with Nb-based Josephson junctions based on the validated "SIMIT Nb03" process and Chemical Mechanical Planarization (CMP) technology. Seven Nb superconducting layers and one Mo resistor layer are included in the "SIMIT Nb04" process with 19 mask levels. The device structure is composed of active layers including junctions at the bottom, two passive transmission line (PTL) layers in the middle and a DC power layer at the top. The circuit fabrication started with the fabrication of Mo resistors with a target sheet resistance Rsh of 3

Ω

, followed by the deposition of Nb/Al-AlO

_x

/Nb trilayer Josephson-junction with a target critical current density Jc at 15 kA/cm

^2

. To increase the Al-AlO

_x

barrier layer etching's repeatability, an additional barrier protection layer was applied. To accomplish high-quality planarization, we created a planarization procedure coupled with dummy filling. To assess the process dependability and controllability, a set of process control monitors (PCMs) for monitoring fabrication and design parameters was designed and monitored. The successful manufacturing and testing of a few small-scale circuits, like our standard library cells, further attests to the viability of our fabrication process for superconducting integrated circuits.

To improve the operating speed and density of Nb single-flux-quantum integrated circuits, we developed an advanced fabrication process based on NEC's standard process. We fabricated planarized six-Nb-layer circuit structures using this advanced process. This new structure has four Nb wiring layers for greater design flexibility. To shield the magnetic field produced by the DC bias current, the DC bias power supply layer was placed under the groundplane. The critical current density of the Josephson junction was 10 kA/cm/sup 2/. We fabricated and tested more than 10 wafers and demonstrated that the six-layer circuits were successfully planarized. We also confirmed insulation between each Nb layer and the reliability of superconducting contacts. This planarization did not significantly degrade the junction characteristics. We measured small spreads in the critical current of less than 2%. These results demonstrated the effectiveness of this advanced process based on mechanical-polishing planarization.

The increase in the single-flux-quantum (SFQ) circuit scale will cause the overall bias current to increase dramatically. The magnetic field interference caused by the current supplied to the SFQ circuit can no longer be ignored. In addition, more complex SFQ circuits require a cell library for more diversified cell types and a more stable operating range to ensure the circuits’ yield. The SIMIT-Nb03P process is then put forward as a tradeoff between process stability and cost. It is compatible with the Nb03 process and does not need an expensive chemical mechanical planarization process. The added new dc power layer is proved to have less interference by simulation. The conversion from Nb03 to Nb03P cell library was very convenient. In addition, some new cells are designed to meet the requirements of complex SFQ circuits. Test circuits of 20 cells of Nb03P were designed and fabricated and were fully verified at low frequencies. The common bias margin of the whole cell library is (–26%, 20%). A variety of large-scale circuits (up to more than 10 000 Josephson junctions) achieve correct function at high frequencies and show good yields on the wafer. It shows that this updated process is cost efficient and suitable for large-scale integration circuits.

We developed a Nb 4-layer process for fabricating superconducting integrated circuits that involves using caldera planarization to increase the flexibility and reliability of the fabrication process. We call this process the planarized high-speed standard process (PHSTP). Planarization enables us to flexibly adjust most of the Nb and SiO2 film thicknesses; we can select reduced film thicknesses to obtain larger mutual coupling depending on the application. It also reduces the risk of intra-layer shorts due to etching residues at the step-edge regions. We describe the detailed process flows of the planarization for the Josephson junction layer and the evaluation of devices fabricated with PHSTP. The results indicated no short defects or degradation in junction characteristics and good agreement between designed and measured inductances and resistances. We also developed single-flux-quantum (SFQ) and adiabatic quantum-flux-parametron (AQFP) logic cell libraries and tested circuits fabricated with PHSTP. We found that the designed circuits operated correctly. The SFQ shift-registers fabricated using PHSTP showed a high yield. Numerical simulation results indicate that the AQFP gates with increased mutual coupling by the planarized layer structure increase the maximum interconnect length between gates.

To improve circuit density and minimize static power dissipation in Single Flux Quantum (SFQ) circuits, this work investigates the application of inductively biased, unshunted Josephson transmission lines (JTLs) which achieve zero static power, compared with regular resistively biased JTLs. Both simulation and experiment results confirm that unshunted JTLs can reliably propagate SFQ pulses with a bias current margin larger than 50%. Based on this, a new fabrication process has been developed featuring eight niobium (Nb) layers, including two Nb/Al-AlOx/Nb junction layers, a dedicated bias-inductor layer, and dual DC-power layers. The vertical functional separation allows 2 active layers. The 1stactive layer uses conventional shunted JJs for logic gates, while the 2nduses unshunted JTLs with inductive bias. This configuration eliminates static power in the interconnect network and simplifies thermal management in stacked Rapid SFQ (RSFQ) architectures. A ten-stage unshunted JTL chain and a hybrid half-adder were designed and demonstrated. Measurements show a 66.7% reduction in static power and a 64.7% reduction in area compared with the Chinese Academy of Scienceconventional single-JJ-layer process. These results verify, for the first time, that inductively biased unshunted interconnects can be monolithically integrated with standard RSFQ logic, offering a scalable path toward ultra-dense, lower-power multilayer superconducting circuits.

A single flux quantum (SFQ) logic cell library has been developed for the 10kA/cm2 Nb multi-layer fabrication process to efficiently design large-scale SFQ digital circuits. In the new cell library, the critical current density of Josephson junctions is increased from 2.5kA/cm2 to 10kA/cm2 compared to our conventional cell library, and the McCumber-Stwart parameter of each Josephson junction is increased to 2 in order to increase the circuit operation speed. More than 300 cells have been designed, including fundamental logic cells and wiring cells for passive interconnects. We have measured all cells and confirmed they stably operate with wide operating margins. On-chip high-speed test of the toggle flip-flop (TFF) cell has been performed by measuring the input and output voltages. The TFF cell at the input frequency of up to 400GHz was confirmed to operate correctly. Also, several fundamental digital circuits, a 4-bit concurrent-flow shift register and a bit-serial adder have been designed using the new cell library, and the correct operations of the circuits have been demonstrated at high clock frequencies of more than 100GHz.