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Shallow NV centres in diamond produced by precision focused ion beam implantation and etching

Anonymous, Joa Al Yahya, Jens Fuhrmann, María José Díaz Sánchez, Anatole Bach, Justine Renaud, M. Reveillard, Alexey Tiranov, Fedor Jelezko, Philippe Goldner, Alexandre Tallaire

Published Jan 1, 2026• 0 citations
Publisher
DOI
10.2139/ssrn.7524642

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The nanometer‐scale engineering of single nitrogen‐vacancy (NV) centres in diamond can be obtained by low‐energy (keV) nitrogen implantation with limited straggling. However, shallow NV centres (a few nanometres deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. It has already been shown that the spin coherence time of shallow NVs is improved by overgrowth of a thin diamond layer. However the influence of the overgrowth on the survival, the optical properties and the charge state of the centres has not been studied in detail. In this article, we have overgrown three diamond samples (containing NV centres implanted at different depths) using different procedures. We show the successful overgrowth of a pattern of very shallow (2 nm) implanted NV centres using an optimised overgrowth process. Furthermore, the charge state of ensembles and single NV centres was found to be shifted from NV0 to NV− and stabilised in the negative charge state after overgrowth. The combination of low‐energy high‐resolution ion implantation and high‐purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond. Left: implanted pattern of very shallow NV centres (depth ∼2 nm) using a pierced AFM tip. Right: same pattern after CVD overgrowth of a 4 μm‐thick diamond layer.

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Sensing nano-scale magnetic field sources is at the heart of many applications in nano-science and biology. Given its very small size and high magnetic sensitivity, the nitrogen vacancy (NV) colour centre in diamond is one of the leading candidates for such applications. However, issues regarding the stability and performance of the NV centre near the diamond's surface are the major obstacle in the practical realization of theses sensors. So far, conventional implantation and growth techniques did not produce practical and/or repeatable solutions to this problem. In this report, we show first results of shallow layers of NVs created using plasma immersion ion implantation (PIII). We show, using Forster Resonance Energy Transfer (FRET), that most NVs are within 3.6 nm from the diamond's surface. Despite the relatively low quality of the diamond substrates used and the simplicity of our PIII system, we have an estimated magnetic sensitivity of around 2.29 μT/[Formula: see text].

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Optimising diamond for quantum applications : engineering, characterisation, and electrical readout of the nitrogen-vacancy centre

Saffron Tyler

This thesis presents research on improving spin coherence times of bulk and single NV centres in CVD diamond via material engineering, alongside electrical readout of the NV electronic ground state. A chemical-mechanical polishing (CMP) technique is investigated to remove sub-surface damage on (001) surfaces caused by scaife polishing. 13C-limited coherence times of shallow implanted NV centres were compared across samples prepared with ICP-RIE or CMP, with CMP samples showing an improvement of 340µs. The effect of co-doping with phosphorus and sulphur on charge stability, creation yield, spin coherence times, and AC sensitivity of shallow NV centres was studied. 10 CVD diamond samples were characterised using above-bandgap imaging, photoluminescent, and Raman spectroscopy. Coherence times in four samples were measured with a home-built confocal microscope. A sample implanted with 110keV32S ions at 1011cm-2 showed the best shot noise-limit to the AC sensitivity. Preferentially-oriented NV centres were produced on pseudo-(111) surfaces. (001) diamonds were nickel-etched to produce (111) trenches overgrown with nitrogen-containing diamond. Preferential orientation was evidenced via optically detected magnetic resonance under an external ⟨111⟩ magnetic field. High-density nitrogen overgrowth in trenches gave short T2 times (<2µs), while lower-density samples showed mean spin coherence times of 160µs, closer to the unetched surface. Finally, a home-built device for electrical spin-state readout is described, including a confocal microscope, metallic contacts, and a readout PCB. Photoelectrically detected magnetic resonance contrast of 63% (compared to 5% optically) is demonstrated , with initial RF device development.

•Sep 17, 2026•0 citations
The nanometer‐scale engineering of single nitrogen‐vacancy (NV) centres in diamond can be obtained by low‐energy (keV) nitrogen implantation with limited straggling. However, shallow NV centres (a few nanometres deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. It has already been shown that the spin coherence time of shallow NVs is improved by overgrowth of a thin diamond layer. However the influence of the overgrowth on the survival, the optical properties and the charge state of the centres has not been studied in detail. In this article, we have overgrown three diamond samples (containing NV centres implanted at different depths) using different procedures. We show the successful overgrowth of a pattern of very shallow (2 nm) implanted NV centres using an optimised overgrowth process. Furthermore, the charge state of ensembles and single NV centres was found to be shifted from NV0 to NV− and stabilised in the negative charge state after overgrowth. The combination of low‐energy high‐resolution ion implantation and high‐purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond. Left: implanted pattern of very shallow NV centres (depth ∼2 nm) using a pierced AFM tip. Right: same pattern after CVD overgrowth of a 4 μm‐thick diamond layer.
Sensing nano-scale magnetic field sources is at the heart of many applications in nano-science and biology. Given its very small size and high magnetic sensitivity, the nitrogen vacancy (NV) colour centre in diamond is one of the leading candidates for such applications. However, issues regarding the stability and performance of the NV centre near the diamond's surface are the major obstacle in the practical realization of theses sensors. So far, conventional implantation and growth techniques did not produce practical and/or repeatable solutions to this problem. In this report, we show first results of shallow layers of NVs created using plasma immersion ion implantation (PIII). We show, using Forster Resonance Energy Transfer (FRET), that most NVs are within 3.6 nm from the diamond's surface. Despite the relatively low quality of the diamond substrates used and the simplicity of our PIII system, we have an estimated magnetic sensitivity of around 2.29 μT/[Formula: see text].
This thesis presents research on improving spin coherence times of bulk and single NV centres in CVD diamond via material engineering, alongside electrical readout of the NV electronic ground state. A chemical-mechanical polishing (CMP) technique is investigated to remove sub-surface damage on (001) surfaces caused by scaife polishing. 13C-limited coherence times of shallow implanted NV centres were compared across samples prepared with ICP-RIE or CMP, with CMP samples showing an improvement of 340µs. The effect of co-doping with phosphorus and sulphur on charge stability, creation yield, spin coherence times, and AC sensitivity of shallow NV centres was studied. 10 CVD diamond samples were characterised using above-bandgap imaging, photoluminescent, and Raman spectroscopy. Coherence times in four samples were measured with a home-built confocal microscope. A sample implanted with 110keV32S ions at 1011cm-2 showed the best shot noise-limit to the AC sensitivity. Preferentially-oriented NV centres were produced on pseudo-(111) surfaces. (001) diamonds were nickel-etched to produce (111) trenches overgrown with nitrogen-containing diamond. Preferential orientation was evidenced via optically detected magnetic resonance under an external ⟨111⟩ magnetic field. High-density nitrogen overgrowth in trenches gave short T2 times (<2µs), while lower-density samples showed mean spin coherence times of 160µs, closer to the unetched surface. Finally, a home-built device for electrical spin-state readout is described, including a confocal microscope, metallic contacts, and a readout PCB. Photoelectrically detected magnetic resonance contrast of 63% (compared to 5% optically) is demonstrated , with initial RF device development.