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Production of bulk NV centre arrays by shallow implantation and diamond CVD overgrowth

Margarita Lesik, Nicole Raatz, Alexandre Tallaire, Piernicola Spinicelli, Roger John, Jocelyn Achard, A. Gicquel, V. Jacques, Jean-François Roch, Jan Meijer, Sébastien Pezzagna

Published Jul 28, 2016• 32 citations

Abstract

The nanometer‐scale engineering of single nitrogen‐vacancy (NV) centres in diamond can be obtained by low‐energy (keV) nitrogen implantation with limited straggling. However, shallow NV centres (a few nanometres deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. It has already been shown that the spin coherence time of shallow NVs is improved by overgrowth of a thin diamond layer. However the influence of the overgrowth on the survival, the optical properties and the charge state of the centres has not been studied in detail. In this article, we have overgrown three diamond samples (containing NV centres implanted at different depths) using different procedures. We show the successful overgrowth of a pattern of very shallow (2 nm) implanted NV centres using an optimised overgrowth process. Furthermore, the charge state of ensembles and single NV centres was found to be shifted from NV0 to NV− and stabilised in the negative charge state after overgrowth. The combination of low‐energy high‐resolution ion implantation and high‐purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond. Left: implanted pattern of very shallow NV centres (depth ∼2 nm) using a pierced AFM tip. Right: same pattern after CVD overgrowth of a 4 μm‐thick diamond layer.

DOI: 10.1002/pssa.201600219

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The nanometer‐scale engineering of single nitrogen‐vacancy (NV) centres in diamond can be obtained by low‐energy (keV) nitrogen implantation with limited straggling. However, shallow NV centres (a few nanometres deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. It has already been shown that the spin coherence time of shallow NVs is improved by overgrowth of a thin diamond layer. However the influence of the overgrowth on the survival, the optical properties and the charge state of the centres has not been studied in detail. In this article, we have overgrown three diamond samples (containing NV centres implanted at different depths) using different procedures. We show the successful overgrowth of a pattern of very shallow (2 nm) implanted NV centres using an optimised overgrowth process. Furthermore, the charge state of ensembles and single NV centres was found to be shifted from NV0 to NV− and stabilised in the negative charge state after overgrowth. The combination of low‐energy high‐resolution ion implantation and high‐purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond. Left: implanted pattern of very shallow NV centres (depth ∼2 nm) using a pierced AFM tip. Right: same pattern after CVD overgrowth of a 4 μm‐thick diamond layer.

The negatively charged nitrogen-vacancy ([Formula: see text]) center shows excellent spin properties and sensing capabilities on the nanoscale even at room temperature. Shallow implanted [Formula: see text] centers can effectively be protected from surface noise by chemical vapor deposition (CVD) diamond overgrowth, i.e. burying them homogeneously deeper in the crystal. However, the origin of the substantial losses in [Formula: see text] centers after overgrowth remains an open question. Here, we use shallow [Formula: see text] centers to exclude surface etching and identify the passivation reaction of NV to NVH centers during the growth as the most likely reason. Indirect overgrowth featuring low energy (2.5-5 keV) nitrogen ion implantation and CVD diamond growth before the essential annealing step reduces this passivation phenomenon significantly. Furthermore, we find higher nitrogen doses to slow down the NV-NVH conversion kinetics, which gives insight into the sub-surface diffusion of hydrogen in diamond during growth. Finally, nano sensors fabricated by indirect overgrowth combine tremendously enhanced [Formula: see text] and [Formula: see text] times with an outstanding degree of depth-confinement which is not possible by implanting with higher energies alone. Our results improve the understanding of CVD diamond overgrowth and pave the way towards reliable and advanced engineering of shallow [Formula: see text] centers for future quantum sensing devices.

Abstract The negatively charged nitrogen-vacancy centre (so-called NV-centre) in diamond is one of the most promising systems for applications in quantum technologies because of the possibility to optically manipulate and read out the spin state of this defect, even at room temperature. Nevertheless, obtaining high NV densities (>500 ppb) close to the surface (5–20 nm) while maintaining good spin properties remain challenging. In this work we rely on a versatile ion implantation system allowing both implanting nitrogen using N 2 + and creating vacancies with He + ion bombardment at variable energies and fluence to create shallow NV ensembles. By optimizing the ion irradiation conditions as well as the surface preparation prior to treatment we successfully increase the amount of created colour centres while demonstrating narrow magnetic resonance linewidths.

Scaling of diamond defect center based quantum registers relies on the ability to position nitrogen vacancy (NV) centers with high spatial resolution. Using ion implantation, shallow (<10 nm) NVs can be placed with accuracy below 20 nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the enhancement of spin properties for shallow implanted NVs using a diamond overgrowth technique. An increase of coherence times up to an order of magnitude (T2 = 250 μs) was achieved, ms decoherence times were realized using dynamical decoupling. This marks a further step towards achieving strong coupling among defects positioned with nm precision.

Efficient creation of shallow NV

^-

ensembles by high-angle ion implantation

Negatively charged nitrogen-vacancy (NV

^-

) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV

^-

centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV

^-

centers. By implanting

^{15}

N ions at angles exceeding 60

^\circ

, we achieve high NV

^-

yields approaching 10% with effective NV

^-

depths below 10 nm. These yields are significantly higher than those typically reported for shallow NV

^-

creation. The enhanced NV

^-

yield is consistent with an increased vacancy-to-nitrogen ratio in the near-surface region, which is expected to promote NV formation during annealing. The created NV

^-

ensembles show coherence properties comparable to those of single shallow NV

^-

centers at similar depths, and allow detection of nuclear spins in van der Waals materials attached to the diamond surface. Our results establish geometric control of ion implantation as a simple and broadly applicable approach to engineer shallow vacancy-related quantum defects.

The controlled scaling of diamond defect center based quantum registers relies on the ability to position NVs with high spatial resolution. Using ion implantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the augmentation of spin properties for shallow implanted NV centers using an overgrowth technique. An increase of the coherence times up to an order of magnitude (T_2 = 250 μs) was achieved. Dynamic decoupling of defects spins achieves ms decoherence times. The study marks a further step towards achieving strong coupling among defects positioned with nm precision.

The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV−/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.