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International Conference on Microwave and Millimeter Wave Technology (ICMMT)

A Cryogenic 2-3 GHz LC-VCO for Silicon Spin Qubit Readout

Jiaxuan Wang, Huazi Huang, Lijun Xiao, Hua Chen

Published May 1, 2026• 0 citations
Publisher
DOI
10.1109/icmmt69626.2026.11678947

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In this thesis, the readout of a silicon spin qubit by transmission at 200 GHz is investigated. The circuit presented, designed in a 22 nm FDSOI process, is intended to detect the quantum-state-dependant shift in resonant frequency of an LC tank. On-die mmWave frequency triplers are included to allow for characterization in a cryogenic probe station, with no external signals above 67 GHz. Using a variable capacitance as a room-temperature-compatible device-under-test, the ability to detect a change in impedance was verified. To the best of the author's knowledge, this is the highest-frequency circuit designed for RF readout of silicon qubits. Operating at 200 GHz reduces the size of certain passive components, such as hybrid couplers and resonator inductors, enabling further monolithic integration of quantum computers.