Cryogenic CMOS circuis for control and readout of spin qubits

Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor $\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)$ of $0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}$ at 4 K using more than 10 times less power consumption than CMOS. The power consumption of control/readout electronics remains a limiting factor for large-scale quantum computers. Here, the authors demonstrate III–V semiconductor and Nb superconductor-based cryogenic electronics integrated on silicon for large-scale quantum computing systems.Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor $$\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)$$ of $$0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}$$ at 4 K using more than 10 times less power consumption than CMOS. The power consumption of control/readout electronics remains a limiting factor for large-scale quantum computers. Here, the authors demonstrate III–V semiconductor and Nb superconductor-based cryogenic electronics integrated on silicon for large-scale quantum computing systems.

Nature CommunicationsDec 30, 202415 citations

\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)

0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}

at 4 K using more than 10 times less power consumption than CMOS. The power consumption of control/readout electronics remains a limiting factor for large-scale quantum computers. Here, the authors demonstrate III–V semiconductor and Nb superconductor-based cryogenic electronics integrated on silicon for large-scale quantum computing systems.