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International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design

A Fully Integrated CMOS Parametric Amplifier for Cryogenic Qubit Readout

Gabriel López-Pinar, C. Aldea, Santiago Celma, Carlos Sánchez‐Azqueta

Published Jun 1, 2026• 0 citations
Publisher
DOI
10.1109/smacd70206.2026.11647813

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Millions of qubits need to be employed in a quantum computer to achieve a fault-tolerant quantum operation. To reduce the complexity in such a large-scale system, the control and readout circuitries have been proposed to be placed at the 4 K stage of dilution refrigerators [1]. CMOS technology is commonly used to leverage its scaling to enable large integration of control and readout circuitries with qubits. However, the high-fidelity readout operations require low noise amplifiers (LNAs) with a noise temperature of a few Kelvins. This necessitates the usage of HEMT and parametric amplifiers [2]. Recently reported CMOS LNAs are still far away from attaining such good performance [3–5]. Thus, this is one of the greatest challenges on the way to the fully integrated CMOS readout. Additionally, due to the limited cooling power of dilution refrigerators, low-power solutions are needed for achieving a very good noise performance at 4 K. This paper presents a 28 nm CMOS LNA for qubit readout, which achieves an order of magnitude power reduction compared to its CMOS counterparts while still providing a similar good noise Figure (NF) performance at 4 K.

IEEE Asian Solid-State Circuits Conference (A-SSCC)•Nov 7, 2021•7 citations
Millions of qubits need to be employed in a quantum computer to achieve a fault-tolerant quantum operation. To reduce the complexity in such a large-scale system, the control and readout circuitries have been proposed to be placed at the 4 K stage of dilution refrigerators [1]. CMOS technology is commonly used to leverage its scaling to enable large integration of control and readout circuitries with qubits. However, the high-fidelity readout operations require low noise amplifiers (LNAs) with a noise temperature of a few Kelvins. This necessitates the usage of HEMT and parametric amplifiers [2]. Recently reported CMOS LNAs are still far away from attaining such good performance [3–5]. Thus, this is one of the greatest challenges on the way to the fully integrated CMOS readout. Additionally, due to the limited cooling power of dilution refrigerators, low-power solutions are needed for achieving a very good noise performance at 4 K. This paper presents a 28 nm CMOS LNA for qubit readout, which achieves an order of magnitude power reduction compared to its CMOS counterparts while still providing a similar good noise Figure (NF) performance at 4 K.