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NEODYMIUM IONS OPTICALLY COUPLED TO GALLIM NITRIDE PHOTONIC CRYSTAL CAVITY

Sato Shinichiro

Published Jul 24, 2024• 0 citations
OpenAlex

Abstract

We demonstrate optical coupling of implanted Nd ions in gallium nitride (GaN) with photonic crystal (PhC)-L3 cavity at room temperature. Nd is one of the Ln elements that shows NIR photon missions, which is suitable for the application of optical communications. The optical coupling enables the enhanced spontaneous photon emission rates of the 4F3/2–4I9/2 and 4F3/2–4I11/2 luminescence transitions (916 nm and 1107 nm) due to the Purcell effect.

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•Apr 28, 2017•0 citations
We demonstrate optical coupling of implanted Nd ions in gallium nitride (GaN) with photonic crystal (PhC)-L3 cavity at room temperature. Nd is one of the Ln elements that shows NIR photon missions, which is suitable for the application of optical communications. The optical coupling enables the enhanced spontaneous photon emission rates of the 4F3/2–4I9/2 and 4F3/2–4I11/2 luminescence transitions (916 nm and 1107 nm) due to the Purcell effect.
Abstract We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the 4 F 3/2–4 I 9/2 and 4 F 3/2–4 I 11/2 transitions (916 and 1107 nm) in Nd3+. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.
Reliable single-photon sources (SPSs) that provide on-demand single photons are indispensable in the rapidly growing field of quantum technologies. To be maximally useful, they must operate at room temperature, be compatible with mature fabrication processes, and integrate seamlessly with other photonic systems. These requirements have driven research into gallium nitride (GaN)-based photon emitters and devices. Lanthanoid (Ln)-doped GaN exhibits temperature-insensitive, spectrally sharp, and stable visible/near infrared emission. Additionally, Ln-doped GaN leverages a well-developed GaN platform, enabling integration into more complex devices. However, the spontaneous emission rate of Ln ions in the 4f-4f transition is lower than that of other SPS candidates, such as quantum dots. In this study, we present two types of nanostructures that enhance the photon emission of implanted Ln ions in GaN: nanopillar structures and photonic crystal nanocavities. We discuss the mechanisms by which these nanostructures enhance photon emission and explore the future prospects of Ln-doped GaN SPS.
Lanthanoid (Ln)-doped Gallium Nitride (GaN) have attracted attentions because of their high intensity luminescence and sharp room-temperature (RT) optical linewidth. These superior luminescent properties are quite attractive for the application of single photon source (SPS) which is a key technology for quantum computing, quantum sensing, and quantum key distribution. However, one of the challenges to realize Ln-doped GaN SPS is the long luminescent transition lifetime, resulting in the low photon counts insufficient to optically detect isolated single Ln ions. Confinement of luminescent centers into nanometersized regions is an effective method to enhance their photon emission and we here we show that confinement into GaN nanopillars enhances photon emission from implanted praseodymium (Pr) ions at RT.
Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.
With an assortment of narrow line-width transitions spanning the visible and IR spectrum and long spin coherence times, rare-earth doped crystals are the leading material system for solid-state quantum memories. Integrating these materials in an on-chip optical platform would create opportunities for highly integrated light-matter interfaces for quantum communication and quantum computing. Nano-photonic resonators with high quality factors and small mode volumes are required for efficient on-chip coupling to the small dipole moment of rare-earth ion transitions. However, direct fabrication of optical cavities in these crystals with current nanofabrication techniques is difficult and unparallelized, as either exotic etch chemistries or physical milling processes are required. We fabricated hybrid devices by mechanically transferring a nanoscale membrane of gallium arsenide (GaAs) onto a neodymium-doped yttrium silicon oxide (Y2SiO5) crystal and then using electron beam lithography and standard III-V dry etching to pattern nanobeam photonic crystal cavities and ring resonator cavities, a technique that is easily adapted to other frequency ranges for arbitrary dopants in any rare earth host system. Single crystalline GaAs was chosen for its low loss and high refractive index at the transition wavelength. We demonstrated the potential to evanescently couple between the cavity field and the 883 nm 4I9/2- 4F3/2 transition of nearby neodymium impurities in the host crystal by examining transmission spectra through a waveguide coupled to the resonator with a custom-built confocal microscope. The prospects and requirements for using this system for scalable quantum networks are discussed.
Quantum light-matter interfaces that reversibly map the quantum state of photons onto the quantum states of atoms, are essential components in the quantum engineering toolbox with applications in quantum communication, computing, and quantum-enabled sensing. In this talk I present our progress towards developing on-chip quantum light-matter interfaces based on nanophotonic resonators fabricated in rare-earth-doped crystals known to exhibit the longest optical and spin coherence times in the solid state. We recently demonstrated coherent control of neodymium (Nd3+) ions coupled to yttrium orthosilicate Y2SiO5 (YSO) photonic crystal nano-beam resonator. The coupling of the Nd3+ 883 nm 4I9/2-4F3/2 transition to the nano-resonator results in a 40 fold enhancement of the transition rate (Purcell effect), and increased optical absorption (~80%) - adequate for realizing efficient optical quantum memories via cavity impedance matching. Optical coherence times T2 up to 100 μs with low spectral diffusion were measured for ions embedded in photonic crystals, which are comparable to those observed in unprocessed bulk samples. This indicates that the remarkable coherence properties of REIs are preserved during nanofabrication process. Multi-temporal mode photon storage using stimulated photon echo and atomic frequency comb (AFC) protocols were implemented in these nano-resonators. Our current technology can be readily transferred to Erbium (Er) doped YSO devices, therefore opening the possibility of efficient on-chip optical quantum memory at 1.5 μm telecom wavelength. Integration with superconducting qubits can lead to devices for reversible quantum conversion of optical photons to microwave photons.