Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Express

Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor

Shin Sato, Takao Oto

Published Jun 25, 2024• 3 citations
Publisher

Abstract

Abstract We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the 4 F 3/2–4 I 9/2 and 4 F 3/2–4 I 11/2 transitions (916 and 1107 nm) in Nd3+. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.

DOI
10.35848/1882-0786/ad5bbd

Related papers

NEODYMIUM IONS OPTICALLY COUPLED TO GALLIM NITRIDE PHOTONIC CRYSTAL CAVITY

Sato Shinichiro

We demonstrate optical coupling of implanted Nd ions in gallium nitride (GaN) with photonic crystal (PhC)-L3 cavity at room temperature. Nd is one of the Ln elements that shows NIR photon missions, which is suitable for the application of optical communications. The optical coupling enables the enhanced spontaneous photon emission rates of the 4F3/2–4I9/2 and 4F3/2–4I11/2 luminescence transitions (916 nm and 1107 nm) due to the Purcell effect.

•Jul 24, 2024•0 citations

Photon emission enhancement of lanthanoid ions implanted in gallium nitride nanostructures

佐藤 真一郎, Takao Oto, Andrew D. Greentree +7 more

Reliable single-photon sources (SPSs) that provide on-demand single photons are indispensable in the rapidly growing field of quantum technologies. To be maximally useful, they must operate at room temperature, be compatible with mature fabrication processes, and integrate seamlessly with other photonic systems. These requirements have driven research into gallium nitride (GaN)-based photon emitters and devices. Lanthanoid (Ln)-doped GaN exhibits temperature-insensitive, spectrally sharp, and stable visible/near infrared emission. Additionally, Ln-doped GaN leverages a well-developed GaN platform, enabling integration into more complex devices. However, the spontaneous emission rate of Ln ions in the 4f-4f transition is lower than that of other SPS candidates, such as quantum dots. In this study, we present two types of nanostructures that enhance the photon emission of implanted Ln ions in GaN: nanopillar structures and photonic crystal nanocavities. We discuss the mechanisms by which these nanostructures enhance photon emission and explore the future prospects of Ln-doped GaN SPS.

•Mar 1, 2026•0 citations

Photon emission enhancement of praseodymium ions implanted with GaN nanopillars

Shinichiro Sato, Manato Deki, Li, Shuo +4 more

Lanthanoid (Ln)-doped Gallium Nitride (GaN) have attracted attentions because of their high intensity luminescence and sharp room-temperature (RT) optical linewidth. These superior luminescent properties are quite attractive for the application of single photon source (SPS) which is a key technology for quantum computing, quantum sensing, and quantum key distribution. However, one of the challenges to realize Ln-doped GaN SPS is the long luminescent transition lifetime, resulting in the low photon counts insufficient to optically detect isolated single Ln ions. Confinement of luminescent centers into nanometersized regions is an effective method to enhance their photon emission and we here we show that confinement into GaN nanopillars enhances photon emission from implanted praseodymium (Pr) ions at RT.

•Feb 12, 2020•0 citations

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

Shin Sato, Shuo Li, Andrew D. Greentree +8 more

Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.

Scientific Reports•Dec 8, 2022•10 citations

Nanophotonic coherent light–matter interfaces based on rare-earth-doped crystals

Tian Zhong, Jonathan M. Kindem, Evan Miyazono +1 more

Quantum light-matter interfaces connecting stationary qubits to photons will enable optical networks for quantum communications, precise global time keeping, photon switching and studies of fundamental physics. Rare-earth-ion-doped crystals are state-of-the-art materials for optical quantum memories and quantum transducers between optical photons, microwave photons and spin waves. Here we demonstrate coupling of an ensemble of neodymium rare-earth-ions to photonic nanocavities fabricated in the yttrium orthosilicate host crystal. Cavity quantum electrodynamics effects including Purcell enhancement (F=42) and dipole-induced transparency are observed on the highly coherent (4)I(9/2)-(4)F(3/2) optical transition. Fluctuations in the cavity transmission due to statistical fine structure of the atomic density are measured, indicating operation at the quantum level. Coherent optical control of cavity-coupled rare-earth ions is performed via photon echoes. Long optical coherence times (T2∼100 μs) and small inhomogeneous broadening are measured for the cavity-coupled rare-earth ions, thus demonstrating their potential for on-chip scalable quantum light-matter interfaces.

arXiv:1507.00977•Nature Communications•Sep 14, 2015•169 citations

Quantum nanophotonic devices based on rare-earth-doped crystals (Conference Presentation)

Andrei Faraon, Tian Zhong, Jonathan M. Kindem +4 more

Quantum light-matter interfaces that reversibly map the quantum state of photons onto the quantum states of atoms, are essential components in the quantum engineering toolbox with applications in quantum communication, computing, and quantum-enabled sensing. In this talk I present our progress towards developing on-chip quantum light-matter interfaces based on nanophotonic resonators fabricated in rare-earth-doped crystals known to exhibit the longest optical and spin coherence times in the solid state. We recently demonstrated coherent control of neodymium (Nd3+) ions coupled to yttrium orthosilicate Y2SiO5 (YSO) photonic crystal nano-beam resonator. The coupling of the Nd3+ 883 nm 4I9/2-4F3/2 transition to the nano-resonator results in a 40 fold enhancement of the transition rate (Purcell effect), and increased optical absorption (~80%) - adequate for realizing efficient optical quantum memories via cavity impedance matching. Optical coherence times T2 up to 100 μs with low spectral diffusion were measured for ions embedded in photonic crystals, which are comparable to those observed in unprocessed bulk samples. This indicates that the remarkable coherence properties of REIs are preserved during nanofabrication process. Multi-temporal mode photon storage using stimulated photon echo and atomic frequency comb (AFC) protocols were implemented in these nano-resonators. Our current technology can be readily transferred to Erbium (Er) doped YSO devices, therefore opening the possibility of efficient on-chip optical quantum memory at 1.5 μm telecom wavelength. Integration with superconducting qubits can lead to devices for reversible quantum conversion of optical photons to microwave photons.

•Apr 28, 2017•0 citations
Abstract We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the 4 F 3/2–4 I 9/2 and 4 F 3/2–4 I 11/2 transitions (916 and 1107 nm) in Nd3+. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.
Reliable single-photon sources (SPSs) that provide on-demand single photons are indispensable in the rapidly growing field of quantum technologies. To be maximally useful, they must operate at room temperature, be compatible with mature fabrication processes, and integrate seamlessly with other photonic systems. These requirements have driven research into gallium nitride (GaN)-based photon emitters and devices. Lanthanoid (Ln)-doped GaN exhibits temperature-insensitive, spectrally sharp, and stable visible/near infrared emission. Additionally, Ln-doped GaN leverages a well-developed GaN platform, enabling integration into more complex devices. However, the spontaneous emission rate of Ln ions in the 4f-4f transition is lower than that of other SPS candidates, such as quantum dots. In this study, we present two types of nanostructures that enhance the photon emission of implanted Ln ions in GaN: nanopillar structures and photonic crystal nanocavities. We discuss the mechanisms by which these nanostructures enhance photon emission and explore the future prospects of Ln-doped GaN SPS.
Lanthanoid (Ln)-doped Gallium Nitride (GaN) have attracted attentions because of their high intensity luminescence and sharp room-temperature (RT) optical linewidth. These superior luminescent properties are quite attractive for the application of single photon source (SPS) which is a key technology for quantum computing, quantum sensing, and quantum key distribution. However, one of the challenges to realize Ln-doped GaN SPS is the long luminescent transition lifetime, resulting in the low photon counts insufficient to optically detect isolated single Ln ions. Confinement of luminescent centers into nanometersized regions is an effective method to enhance their photon emission and we here we show that confinement into GaN nanopillars enhances photon emission from implanted praseodymium (Pr) ions at RT.
Abstract Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.
Quantum light-matter interfaces connecting stationary qubits to photons will enable optical networks for quantum communications, precise global time keeping, photon switching and studies of fundamental physics. Rare-earth-ion-doped crystals are state-of-the-art materials for optical quantum memories and quantum transducers between optical photons, microwave photons and spin waves. Here we demonstrate coupling of an ensemble of neodymium rare-earth-ions to photonic nanocavities fabricated in the yttrium orthosilicate host crystal. Cavity quantum electrodynamics effects including Purcell enhancement (F=42) and dipole-induced transparency are observed on the highly coherent (4)I(9/2)-(4)F(3/2) optical transition. Fluctuations in the cavity transmission due to statistical fine structure of the atomic density are measured, indicating operation at the quantum level. Coherent optical control of cavity-coupled rare-earth ions is performed via photon echoes. Long optical coherence times (T2∼100 μs) and small inhomogeneous broadening are measured for the cavity-coupled rare-earth ions, thus demonstrating their potential for on-chip scalable quantum light-matter interfaces.
Quantum light-matter interfaces that reversibly map the quantum state of photons onto the quantum states of atoms, are essential components in the quantum engineering toolbox with applications in quantum communication, computing, and quantum-enabled sensing. In this talk I present our progress towards developing on-chip quantum light-matter interfaces based on nanophotonic resonators fabricated in rare-earth-doped crystals known to exhibit the longest optical and spin coherence times in the solid state. We recently demonstrated coherent control of neodymium (Nd3+) ions coupled to yttrium orthosilicate Y2SiO5 (YSO) photonic crystal nano-beam resonator. The coupling of the Nd3+ 883 nm 4I9/2-4F3/2 transition to the nano-resonator results in a 40 fold enhancement of the transition rate (Purcell effect), and increased optical absorption (~80%) - adequate for realizing efficient optical quantum memories via cavity impedance matching. Optical coherence times T2 up to 100 μs with low spectral diffusion were measured for ions embedded in photonic crystals, which are comparable to those observed in unprocessed bulk samples. This indicates that the remarkable coherence properties of REIs are preserved during nanofabrication process. Multi-temporal mode photon storage using stimulated photon echo and atomic frequency comb (AFC) protocols were implemented in these nano-resonators. Our current technology can be readily transferred to Erbium (Er) doped YSO devices, therefore opening the possibility of efficient on-chip optical quantum memory at 1.5 μm telecom wavelength. Integration with superconducting qubits can lead to devices for reversible quantum conversion of optical photons to microwave photons.