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CMOS-Fabricated Piezo-Optomechanical Platform for Hyperfine Qubit Control

Jacob M. Freedman, Andrew Jay Leenheer, Neshat Sadafi, Josh Montoya, Nils T. Otterstrom, Matt Eichenfield

Published Jan 1, 2026• 0 citations
Publisher

Abstract

We describe all-CMOS-fabricated, piezo-optomechanical, acousto-optic photonic integrated circuits that convert high-power continuous-wave visible laser light to gigahertz-frequency amplitude-modulated signals that can provide gate operations for trapped-atom and ion qubits.
DOI
10.1364/cleo_at.2026.ath4c.1

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Scaling quantum control for atoms, ions, and solid-state emitters requires gigahertz-frequency spectral control of high-power visible light in a volume-manufacturable platform. Silicon nitride photonics provides high power handling and CMOS-foundry compatibility but has no intrinsic mechanism for high-speed modulation. Integration with piezoelectric materials enables acousto-optic phase modulation, and mechanical resonant enhancement has made it efficient at gigahertz frequencies. However, a single resonance restricts the modulation waveform to a single tone, imposing Bessel-function sideband amplitudes and limiting frequency-shifting efficiency to 33.9%. Here we engineer a silicon nitride acousto-optic microstructure to support harmonically spaced resonances at 1.14 GHz and 2.28 GHz, each strongly optomechanically coupled to a 730 nm guided optical mode, so that tailored non-sinusoidal modulation waveforms can be resonantly synthesized. By piezoelectrically controlling the two mechanical amplitudes and their relative phase, we demonstrate 50% conversion to one sideband (1.5x the single-tone theoretical maximum), a flat seven-line comb, and a frequency shift with 60 dB carrier and 53 dB image suppression - to our knowledge the highest reported for an integrated modulator. The devices are fabricated in a 200 mm CMOS foundry, and we measure 91.7% yield without post-fabrication tuning across 36 devices from three wafers. We also show how the technique can be straightforwardly scaled to three or more harmonics. This result overcomes the trade-off between resonant enhancement and spectral programmability, with important consequences including improved single-qubit gate efficiency for hyperfine qubits.
Realizing photonic quantum computing at scale requires integrated circuits that combine ultra-low loss with fast, low-power, low-hysteresis, and low-crosstalk reconfiguration. These requirements are particularly challenging at visible wavelengths, where many quantum resource-state generators, including single-photon sources and quantum memories, naturally operate. Low-confinement silicon nitride waveguides offer the requisite loss performance, but conventional thermo-optic modulators dissipate significant static power, driving thermal crosstalk and precluding cryogenic operation. Visible-wavelength piezo-optomechanical circuits avoid these drawbacks, but existing demonstrations rely either on high-confinement waveguides with propagation losses of 35-100 dB/m, or on low-confinement platforms using foundry-incompatible PZT. Here we combine piezo-optomechanical actuation with a CMOS-foundry-fabricated, low-confinement silicon nitride platform, achieving 2.6 dB/m propagation loss at 780 nm, megahertz-scale modulation bandwidth, a half-wave voltage-length product of 2.8 Vm, and negligible hysteresis. We demonstrate reconfigurable Mach-Zehnder interferometers with 0.63 dB loss per spiral phase shifter, enabling deep, actively reconfigurable visible-wavelength quantum photonic circuits.
Abstract Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.
Most trapped-ion quantum computers confine ions using precise voltages applied to electrodes and manipulate their internal states and execute quantum logic operations using focused laser beams. The prevailing approach to scaling these systems from current sizes that use tens of ions to ones with several orders of magnitude more ions relies on the lithographic fabrication of larger electrode arrays as well as on-chip integrated waveguides for delivering light to each individual ion. This approach solves the crosstalk problem that is inherent to free-space light delivery, but it does not address the input/output problem associated with coupling many optical signals to the on-chip waveguides. Here we describe an approach that uses CMOS-compatible optical modulators that can substantially address this challenge, and analyze its architectural implications.
Quantum transduction between microwave and optical photons offers the potential to merge the long-range connectivity of optical photons with the deterministic quantum operations of superconducting microwave qubits. A promising approach to achieving this uses an intermediary mechanical mode along with piezo-optomechanical interactions. Traditionally, these transducers are suspended to confine mechanical fields, but this complicates manufacturing and comes with the major challenge of poor thermal anchoring and a trade-off between noise and efficiency. To overcome these issues, we introduce the—to our knowledge—first design of a release-free electro-optomechanical quantum transducer. Our release-free, i.e., non-suspended, design leverages a silicon-on-sapphire platform. It combines release-free lithium niobate electromechanical crystals with silicon optomechanical crystals on a sapphire substrate, optimizing thermal anchoring and microwave and mechanical coherence. Despite departing from the traditional suspended transducer paradigm, our release-free design achieves coupling rates sufficient for quantum-level interactions between microwave photons, phonons, and optical photons. Unconventionally, it utilizes high-wavevector mechanical modes tightly confined to the chip surface. Beyond quantum science and engineering, this platform and its design principles could also propel low-power acousto-optic systems in integrated photonics.