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arXiv:2210.14368 · npj Quantum Information

High-fidelity trapped-ion qubit operations with scalable photonic modulators

Craig Hogle, D. Dominguez, Mark Dong, Andrew Jay Leenheer, Hayden McGuinness, Brandon Ruzic, Matt Eichenfield, Daniel Stick

Published Jul 26, 2023• 32 citations
arXivHTMLPDF

Abstract

Abstract Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.

DOI
10.1038/s41534-023-00737-1

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Abstract Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.
Monolithic integration of control technologies for atomic systems presents a promising route to the development of quantum computers and portable quantum sensors. Trapped atomic ions form the basis of high-fidelity quantum information processors and high-accuracy optical clocks, but currently rely on free-space optics for ion control, limiting portability and scalability. Here we demonstrate a surface-electrode ion trap which delivers all wavelengths required for ionization, cooling, coherent operations, and quantum-state preparation and detection of Sr+^{+}+ qubits using integrated waveguides and grating couplers. Laser light from the violet to the infrared is coupled onto the chip via an optical-fiber array, creating an inherently stable optical path that we use to demonstrate qubit coherence resilient to platform vibrations. This demonstration of CMOS-compatible integrated-photonic surface-trap fabrication, robust packaging, and enhanced qubit coherence represents a key advance in the development of portable trapped-ion quantum sensors and clocks, and it lights the way toward the complete, individual control of larger numbers of ions in quantum information processing systems.
Abstract Practical and useful quantum information processing requires substantial improvements with respect to current systems, both in the error rates of basic operations and in scale. The fundamental qualities of individual trapped-ion1 qubits are promising for long-term systems2, but the optics involved in their precise control are a barrier to scaling3. Planar-fabricated optics integrated within ion-trap devices can make such systems simultaneously more robust and parallelizable, as suggested by previous work with single ions4. Here we use scalable optics co-fabricated with a surface-electrode ion trap to achieve high-fidelity multi-ion quantum logic gates, which are often the limiting elements in building up the precise, large-scale entanglement that is essential to quantum computation. Light is efficiently delivered to a trap chip in a cryogenic environment via direct fibre coupling on multiple channels, eliminating the need for beam alignment into vacuum systems and cryostats and lending robustness to vibrations and beam-pointing drifts. This allows us to perform ground-state laser cooling of ion motion and to implement gates generating two-ion entangled states with fidelities greater than 99.3(2) per cent. This work demonstrates hardware that reduces noise and drifts in sensitive quantum logic, and simultaneously offers a route to practical parallelization for high-fidelity quantum processors5. Similar devices may also find applications in atom- and ion-based quantum sensing and timekeeping6.
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from λλλ = 405 - 880 nm with -27 dB average intensity crosstalk at 5 μm5\,μ\mathrm{m}5μm pitch. We trap 40Ca+^{40}\mathrm{Ca}^{+}40Ca+ and 138Ba+^{138}\mathrm{Ba}^{+}138Ba+ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.
Abstract Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors1–4. Trapped atomic ions form the basis of high-fidelity quantum information processors5, 6 and high-accuracy optical clocks7. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. Here we demonstrate a surface-electrode ion-trap chip8, 9 using integrated waveguides and grating couplers, which delivers all the wavelengths of light required for ionization, cooling, coherent operations and quantum state preparation and detection of Sr+ qubits. Laser light from violet to infrared is coupled onto the chip via an optical-fibre array, creating an inherently stable optical path, which we use to demonstrate qubit coherence that is resilient to platform vibrations. This demonstration of CMOS-compatible integrated photonic surface-trap fabrication, robust packaging and enhanced qubit coherence is a key advance in the development of portable trapped-ion quantum sensors and clocks, providing a way towards the complete, individual control of larger numbers of ions in quantum information processing systems.
Most trapped-ion quantum computers confine ions using precise voltages applied to electrodes and manipulate their internal states and execute quantum logic operations using focused laser beams. The prevailing approach to scaling these systems from current sizes that use tens of ions to ones with several orders of magnitude more ions relies on the lithographic fabrication of larger electrode arrays as well as on-chip integrated waveguides for delivering light to each individual ion. This approach solves the crosstalk problem that is inherent to free-space light delivery, but it does not address the input/output problem associated with coupling many optical signals to the on-chip waveguides. Here we describe an approach that uses CMOS-compatible optical modulators that can substantially address this challenge, and analyze its architectural implications.
The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times, high qubit readout fidelity, and universal logic gates. While these essential properties have been demonstrated, the ability to scale a trapped ion quantum system has not yet been shown. The challenge of scaling the system calls for methods to realize high-fidelity logic gates in scalable trap structures. Surface electrode ion traps, that are microfabricated from a silicon substrate, provide a scalable platform for trapping ion qubits only if high-fidelity operations are achievable in these structures. Here, we present a system for trapping and manipulating ions in a scalable surface trap. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8 quanta/ms indicate stable trapping conditions in these microtraps. Coherence times of more than one second verify adequate qubit and control field stability. We demonstrate low-error single-qubit gates performed using stimulated Raman transitions driven by lasers that are tightly focused on the ion qubit. Digital feedback loops are implemented to control the driving field's amplitude and frequency. Gate errors are measured using a randomized benchmarking protocol for single qubit gates, where residual amplitude error in the control beam is compensated using various pulse sequence techniques. Using pulse compensation, we demonstrate single qubit gates with an average error per randomized Clifford group gate of 3.6(3)times10−43.6(3)\\times10^{-4}3.6(3)times10−4, which is below the fault-tolerant threshold for some error-correction schemes.