Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Journal of the Electron Devices Society

Device Models for Josephson Field-Effect Transistors and for Superconducting Integrated Circuits

Shanuka Gamaethige, Markus Lehtisalo, Heorhii Bohuslavskyi, Kari Stadius, Klaara Viisanen, Jussi Ryynänen, Andrey Generalov

Published Jan 1, 2026• 0 citations
Publisher

Abstract

| openaire: EC/HE/101257985/EU//SuperICQ Publisher Copyright: © 2013 IEEE.
DOI
10.1109/jeds.2026.3705996

Related papers

Circuit models and applications of the superconducting field-effect transistor

Lance A. Glasser

Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the drain-to-source critical current to changes in gate charge is shown to control much of the device dynamics. The model is used to investigate several circuit configurations including amplifiers, inverters, latches, flux transfer devices, and phase-locked components.>

IEEE Journal of Solid-State Circuits•Oct 1, 1989•16 citations

Bridge Type Josephson Junction Devices and Integrated Circuits

Takuo Sugano

学術月報•Jul 1, 1986•0 citations

Bipartite entanglement under frequency comb pumping in parametric Josephson circuits

Mikael Vartiainen, Ilari Lilja, Ekaterina Mukhanova +3 more

| openaire: EC/H2020/824109/EU//EMP | openaire: EC/HE/101135868/EU//MiSS

Physical review. B./Physical review. B•May 12, 2026•0 citations

Simulation of Superconducting Circuits Composed of Josephson Junctions and π-Junctions

Yuki Yamanashi, Akira Sugiyama, Shunpei Imagawa +1 more

IEICE Technical Report; IEICE Tech. Rep.•Apr 14, 2017•1 citation

Wafer-scale graphene Josephson field-effect transistors and device models for superconducting integrated circuits

Shanuka Gamaethige, Markus Lehtisalo, Kari Stadius +4 more

The superconducting transistor, or Josephson Field Effect Transistor (JoFET), is a versatile building block for ultra-low-power and high-energy-efficiency classical and quantum electronics. In a JoFET, the superconducting (zero-resistance) current is controlled by electrostatic gate voltage, which enables the scalability of solid-state quantum computers and the creation of next-generation superconducting integrated circuits (ICs). The development of JoFETs has so far been limited to single devices or a few-transistor circuits due to the lack of reproducible technological platform. Here, we report on technological progress of wafer-scale JoFET fabrication, achieving a 98% yield on a 150 mm wafer platform. Now that the large-scale and reproducible fabrication JoFETs has become feasible, we present behavioral and physics models as the required steps toward the design of novel JoFET-based ICs. Using the presented models, we obtain a good description of experimental data, thus paving the way for the design of next-generation superconducting ICs.

IEEE International Conference on Emerging Electronics (ICEE)•Dec 13, 2025•0 citations

Comment on “Absence of a Dissipative Quantum Phase Transition in Josephson Junctions”

Pertti Juhani Hakonen, Edouard B Sonin

| openaire: EC/H2020/670743/EU//QuDeT

Physical Review X•Mar 12, 2021•19 citations
Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the drain-to-source critical current to changes in gate charge is shown to control much of the device dynamics. The model is used to investigate several circuit configurations including amplifiers, inverters, latches, flux transfer devices, and phase-locked components.>
The superconducting transistor, or Josephson Field Effect Transistor (JoFET), is a versatile building block for ultra-low-power and high-energy-efficiency classical and quantum electronics. In a JoFET, the superconducting (zero-resistance) current is controlled by electrostatic gate voltage, which enables the scalability of solid-state quantum computers and the creation of next-generation superconducting integrated circuits (ICs). The development of JoFETs has so far been limited to single devices or a few-transistor circuits due to the lack of reproducible technological platform. Here, we report on technological progress of wafer-scale JoFET fabrication, achieving a 98% yield on a 150 mm wafer platform. Now that the large-scale and reproducible fabrication JoFETs has become feasible, we present behavioral and physics models as the required steps toward the design of novel JoFET-based ICs. Using the presented models, we obtain a good description of experimental data, thus paving the way for the design of next-generation superconducting ICs.