A high-voltage DC bias generator chip is designed to address the scalability challenges of ion trap systems. The circuit employs a single digital-to-analog converter (DAC) to generate 64 channel outputs using time-division multiplexed driving. The chip, fabricated using 180 nm BCDMOS process, produces 64 DC voltages in a range of -10V to 16V at 4 Kelvin(4K) with an 11.06 bit resolution. The chip is verified with a trap of ${ }^{40} \mathbf{C a}^{+}$ ions, showing successful operations of capturing and shuttling the ions.A high-voltage DC bias generator chip is designed to address the scalability challenges of ion trap systems. The circuit employs a single digital-to-analog converter (DAC) to generate 64 channel outputs using time-division multiplexed driving. The chip, fabricated using 180 nm BCDMOS process, produces 64 DC voltages in a range of -10V to 16V at 4 Kelvin(4K) with an 11.06 bit resolution. The chip is verified with a trap of ${ }^{40} \mathbf{C a}^{+}$ ions, showing successful operations of capturing and shuttling the ions.

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{ }^{40} \mathbf{C a}^{+}

ions, showing successful operations of capturing and shuttling the ions.