Fractional Chern insulators arise in topologically nontrivial flat bands, characterized by an integer Chern number C that corresponds to the number of dissipationless edge states in the non-interacting regime. Higher Chern numbers can replicate the physics of higher Landau levels and often confer enhanced topological robustness. However, realizing correlated fractional phases with higher Chern numbers in such flat band systems remains challenging. Here, we propose an interlayer coupling scheme to generate higher Chern numbers in a flat-band system, where the interlayer coupling transforms two C = 1 bands in a bilayer checkerboard lattice into a single flat band with C = 2 by lifting their degeneracy and merging their topological indices. Exact diagonalization calculation reveals that this engineered band hosts two fractional Chern insulator states with C = 2/3 and 2/5, respectively. An experimental setup is proposed to simulate these states using cold alkaline-earth-like atoms in an effective bilayer optical lattice. Our work provides a general and widely applicable strategy for constructing higher Chern number flat bands, opening a pathway to explore exotic fractional quantum phases.
The Hofstadter model is a popular choice for theorists investigating the fractional quantum Hall effect on lattices, due to its simplicity, infinite selection of topological flat bands, and increasing applicability to real materials. In particular, fractional Chern insulators in bands with Chern number
∣C∣>1 can demonstrate richer physical properties than continuum Landau level states and have recently been detected in experiments. Motivated by this, we examine the stability of fractional Chern insulators with higher Chern number in the Hofstadter model, using large-scale infinite density matrix renormalization group (iDMRG) simulations on a thin cylinder. We confirm the existence of fractional states in bands with Chern numbers
C=1,2,3,4,5 at the filling fractions predicted by the generalized Jain series [Phys. Rev. Lett. 115, 126401 (2015)]. Moreover, we discuss their metal-to-insulator phase transitions, as well as the subtleties in distinguishing between physical and numerical stability. Finally, we comment on the relative suitability of fractional Chern insulators in higher Chern number bands for proposed modern applications.