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Two-Qubit Spin Entanglement in Coupled Quantum Dots within Strained Quantum Wells

Pon Subbiah Aravind Raj, Miruthubashni

Published Mar 31, 2026• 0 citations
Publisher

Abstract

We investigate spin entanglement in a strained Si/SiGe quantum well hosting two laterally coupled quantum dots separated by ~30 nm. The model incorporates strain-induced band modulation and spin–orbit interactions, with particular emphasis on the interplay between Rashba and Dresselhaus terms. Using a two-electron Hamiltonian framework and evaluating entanglement via Wootters concurrence, we demonstrate that the degree of spin entanglement can be effectively tuned by an external magnetic field and by varying the Ge concentration in the heterostructure. In contrast to conventional GaAs-based systems, our results indicate a pronounced dominance of the Dresselhaus contribution, exceeding the Rashba term by approximately one to two orders of magnitude, consistent with reported behavior in Si/SiGe quantum wells. Furthermore, our result reveals that the operational regime supporting stable two-qubit information exchange remains largely insensitive to inter-dot spacing within the considered range. Our reports highlight the potential of strained silicon platforms for controllable spin-based quantum information processing.

DOI
10.5281/zenodo.19351632

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cond-mat.mes-hallCross-listedarXiv:2604.16713•Apr 21, 2026
We investigate spin entanglement in a strained Si/SiGe quantum well hosting two laterally coupled quantum dots separated by ~30 nm. The model incorporates strain-induced band modulation and spin–orbit interactions, with particular emphasis on the interplay between Rashba and Dresselhaus terms. Using a two-electron Hamiltonian framework and evaluating entanglement via Wootters concurrence, we demonstrate that the degree of spin entanglement can be effectively tuned by an external magnetic field and by varying the Ge concentration in the heterostructure. In contrast to conventional GaAs-based systems, our results indicate a pronounced dominance of the Dresselhaus contribution, exceeding the Rashba term by approximately one to two orders of magnitude, consistent with reported behavior in Si/SiGe quantum wells. Furthermore, our result reveals that the operational regime supporting stable two-qubit information exchange remains largely insensitive to inter-dot spacing within the considered range. Our reports highlight the potential of strained silicon platforms for controllable spin-based quantum information processing.
Abstract Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to photons via hybrid spin-circuit QED (cQED) devices enables long-range interactions and integration with other cQED platforms. Here, we investigate hole spin–photon coupling in compact single quantum dot setups. By incorporating ubiquitous strain inhomogeneities to our theory, we identify three main spin–photon coupling channels: a vector-potential-spin–orbit geometric mechanism–dominant for vertical magnetic fields–, an inhomogeneous Rashba term generalizing previous spin–orbit field models, and strain-induced g -tensor terms–most relevant for in-plane fields. Comparing Si, unstrained (relaxed) Ge, and biaxially strained Ge wells, we find that Si and unstrained Ge provide optimal coupling strengths (tens of MHz) thanks to their reduced heavy-hole, light-hole splitting. We demonstrate efficient switching of the spin–photon coupling while preserving sweet spot conditions by operating with an in-plane magnetic field. Finally, we evaluate quantum state transfer and two-qubit gate protocols, achieving ≳ 99 % fidelity for state transfer and > 90 % for two-qubit gates with realistic coherence times, establishing single-dot hole spins as a viable platform for compact spin-cQED architectures and highlighting unstrained Ge as a promising candidate for spin–photon interactions.
Two-dimensional (2D) electron/hole gases confined in semiconductor heterostructures suffer from weak Rashba spin-orbit coupling (SOC) for manipulating spin degreee of freedom via an electric rather than a magnetic field. Here, we show that complementary metal-oxide-semiconductor technology-accessible strain could substantially enhance the linear Rashba SOC of the top hole subband in Ge/SiGe quantum wells (QWs) to a level comparable to that of 2D Rashba materials through enhancing the mixture of the light-hole and heavy-hole bands. We further show that strongly enhanced Rashba SOC boosts the Rabi frequency of hole spin qubits confined in Ge/SiGe QWs by two orders of magnitude to an unprecedented 40 GHz, more than one order of magnitude faster than other qubit platforms. We also demonstrate that the hole spin rotation with Rabi frequency > 25 GHz enters a new regime being immune to gate control-induced electric noise, opening a new avenue to simultaneously improve the gate speed and gate fidelity. Our findings provide a new routine to substantially enhance the Rashba SOC in 2D semiconductor hole gases to a level that is great for spintronic applications.
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance, with spin-flip times shorter than 100 ps. Long-distance qubit-qubit coupling can be mediated by the cavity electric field of a superconducting transmission line resonator, where we show that operation times below 20 ns seem feasible for the entangling iSWAP\sqrt{i\text{SWAP}}iSWAP​ gate. The absence of Dresselhaus spin-orbit interaction (SOI) and the presence of an unusually strong Rashba-type SOI enable precise control over the transverse qubit coupling via an externally applied, perpendicular electric field. The latter serves as an on-off switch for quantum gates and also provides control over the ggg factor, so single- and two-qubit gates can be operated independently. Remarkably, we find that idle qubits are insensitive to charge noise and phonons, and we discuss strategies for enhancing noise-limited gate fidelities.
Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are commonly used to host spin qubits due to their high mobility and low percolation density, the SiGe spacer creates a gap between the qubits and control electrodes, which limits the ability to tune exchange coupling. As a result, residual coupling leads to unwanted single-qubit phase shifts, making multi-qubit control more difficult. In this work, we explore swapping the roles of overlapping nanogates to overcome this issue. By reconfiguring the gate voltages, we demonstrate in situ role switching while maintaining multi-qubit control. Additionally, this method significantly improves the tunability of exchange coupling by several orders of magnitude over the traditional approach. This strategy reduces unintended single-qubit phase shifts and minimizes the complexity of multi-qubit control, supporting scalable growth with minimal experimental overhead.
In the last years, the electron spin in quantum dots has become a most promising candidate for the realization of qubits, the basic element for quantum computation. In quantum dot spin qubits the exchange interaction implements a fundamental two qubit gate, which originates in the Coulomb interaction and the Pauli principle. Compared to single qubit gates, the exchange based gates are much faster and easier to control locally, motivating the solely exchange energy based quantum computation. The control is based on the exponential sensitivity of the exchange energy on the interparticle distance. Manipulation then can proceed, for example, shifting the single particle states electrically or compressing them magnetically. The practical manipulation schemes require quantitative knowledge of the exchange energy. The spin-orbit interaction plays an important role in this nano-system. Indeed the usual exchange interaction changes its magnitude, while a new term, called anisotropic exchange, appears. In this thesis we propose an accurate effective spin Hamiltonian for modeling spin-orbit-induced spin dynamics in the presence of the magnetic field. We have also performed numerically exact calculations of the isotropic and anisotropic exchange coupling in realistic two-electron GaAs coupled quantum dots in the presence of both Dresselhaus and Bychkov-Rashba spin-orbit interactions. The numerics allow us to establish the goodness of our model and to see the limits of previous statements. Furthermore we find that in zero magnetic field the second-order spin-orbit effects are absent at all interdot couplings.
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for electron spin qubit performance, as intravalley and intervalley SOC can significantly perturb the operation of electron spin qubits. While these interactions can be harnessed to drive coherent rotations in a singlet-triplet qubit, coupling to low-lying excited valley states can lead to undesirable spin relaxation when valley splitting is on resonance with the Zeeman energy. In this work, we measure the angular dependence of the interfacial spin-orbit interaction as a function of the direction and magnitude of an applied external magnetic field in SiMOS and Si/SiGe heterostructures, two common material platforms for silicon spin qubits. We construct a physical model that accurately infers intra- and inter-valley SOC physics from fits to the data, allowing for a direct comparison between these two material systems. For the devices measured we find that, while the ggg-factor differences are comparable, the SiMOS QDs exhibit an order of magnitude larger spin-valley coupling than for Si/SiGe. Moreover, we find that the angular dependence of the spin-valley coupling is similar for both devices, with similar magnetic field orientations minimizing the spin-valley coupling. Our work points towards operational schemes for optimizing spin-valley coupling to avoid or exploit this mechanism for qubit operation.