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Resonant excitation of tin-vacancy centers in diamond fabricated by high energy ion implantation

泰之成田, Yasuyuki Narita, Peng Wang +5 more

Sep 1, 20210 citations

Investigation of Resonant Excitation and Stark Tuning of Negatively Charged Tin-Vacancy Centers in Diamond

Hope Lee, Jakob Grzesik, Daniel Riedel +4 more

We present a study on the resonant excitation and electrical Stark tuning of negatively charged tin-vacancy (SnV−) defect centers in diamond.

Conference on Lasers and Electro-OpticsJan 1, 20220 citations

Resonant Excitation of Tin-Vacancy Centers in Diamond

Yasuyuki Narita, Peng Wang, Takashi Taniguchi +3 more

The Japan Society of Applied PhysicsJan 26, 20210 citations

Site-controlled generation of tin-vacancy centers in diamond via shallow ion implantation and diamond overgrowth

Alison E. Rugar, Haiyu Lu, Constantin Dory +5 more

We generate tin-vacancy (SnV-) centers in patterned arrays by shallowly implanting Sn ions into diamond through an implantation mask and subsequently growing diamond. This method eliminates extraneous emission lines present in vacuum-annealed SnV- samples.

Conference on Lasers and Electro-OpticsJan 1, 20200 citations

Shallow NV centres in diamond produced by precision focused ion beam implantation and etching

Anonymous, Joa Al Yahya, Jens Fuhrmann +8 more

Jan 1, 20260 citations

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Alison E. Rugar, Haiyu Lu, Constantin Dory +5 more

Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV – ) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV – centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV – ) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV – centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

arXiv:1910.14165Nano LettersFeb 7, 202072 citations

Resonant Excitation of Tin-Vacancy Centers in Diamond Fabricated by High Energy Ion Implantation

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Resonant Excitation of Tin-Vacancy Centers in Diamond Fabricated by High Energy Ion Implantation

Abstract

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