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Conference on Lasers and Electro-Optics

Site-controlled generation of tin-vacancy centers in diamond via shallow ion implantation and diamond overgrowth

Alison E. Rugar, Haiyu Lu, Constantin Dory, Shuo Sun, Patrick J. McQuade, Zhi‐Xun Shen, Nicholas A. Melosh, Jelena Vuckovic A

Published Jan 1, 2020• 0 citations
Publisher

Abstract

We generate tin-vacancy (SnV-) centers in patterned arrays by shallowly implanting Sn ions into diamond through an implantation mask and subsequently growing diamond. This method eliminates extraneous emission lines present in vacuum-annealed SnV- samples.
DOI
10.1364/cleo_qels.2020.ftu3d.3

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Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV − ) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV − ), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV − centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.
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Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV – ) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties, including narrow-linewidth emission and long spin coherence times. SnV – centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV – centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for the generation of high-quality SnV – centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV – centers (as narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV – centers under resonant excitation. Our results are an important step toward SnV – -based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.