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A strongly driven single-spin qubit

健太 武田, Kenta Takeda, 純 神岡, Jun Kamioka, 利顕 小幡, Toshiaki Obata, 哲夫 小寺, T. Nakajima, Matthieu R. Delbecq, S. Amaha, Jun Yoneda, A. Noiri, R. Sugawara, Tetsuo Kodera, T. Kodera, Seigo Tarucha, S. Oda, Seigo Tarucha

Published Aug 1, 2015• 0 citations
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cond-mat.mes-hallCross-listedarXiv:2608.11072•Aug 12, 2026
We describe an approach to electrically control the strong interaction between a single electron spin and the vibrational motion of a suspended carbon nanotube resonator. The strength of the deflection-induced spin-phonon coupling is dependent on the wavefunction of the electron confined in a lateral carbon nanotube quantum dot. An electrical field along the nanotube shifts the effective center of the quantum dot, leading to the corresponding modification of the spin-phonon strength. Numerical simulations with experimentally reachable parameters show that high fidelity quantum state transfer between mechanical and spin qubits driven by electrical pulses is feasible. Our results form the basis for the fully electrical control of the coherent interconvertion between light and spin qubits and for manufacturing electrically driven quantum information processing systems.
In semiconductor single-spin qubits, high-fidelity quantum gates have been demonstrated; however, achieving consistent performance remains challenging due to variations in driven qubit coherence, which is less explored than free-evolution coherence such as T2∗T_2^*T2∗​. Here, we report single-qubit gate fidelities above 99.999%, achieved by dramatically extending the driven-spin coherence time and suppressing off-resonant driving effects that are detrimental to accurate fidelity benchmarking. We demonstrate that removing proximal reservoirs significantly enhances the spin-locking coherence time (T1ρT_{1ρ}T1ρ​), a critical metric for qubits under microwave driving. Furthermore, we reveal that in typical spin qubit setups using parity readout and rectangular pulses, off-resonant excitation of neighboring qubits causes substantial benchmarking artifacts. By optimizing device conditions to mitigate microwave-induced degradation and implementing spectrally tailored pulse shaping, we achieve a π/2π/2π/2 gate fidelity of 99.99920(2)%, with remaining errors primarily limited by incoherent noise. These results showcase the mechanisms that bound fidelity benchmarking in state-of-the-art silicon spin qubits and provide practical guidelines for achieving and verifying high fidelities in these systems.