Fluorine‐doped ZnSe for applications in quantum information processing
Thaddeus D. Ladd, Kaoru Sanaka, Y. Yamamoto +2 more
Abstract Devices based on group II–VI semiconductors, and in particular ZnSe, show several advantages for single‐photon sources in comparison to group III–V and group IV devices. Additionally, the spin system of the neutral 19F donor has strong potential as a quantum memory. Here, we summarize these advantages and some initial demonstrations of the promise of 19F:ZnSe for quantum information, including the observation of the interference of photons from independent single 19F:ZnSe emitters and the fabrication of 19F‐doped microdisk cavities showing low‐threshold lasing.
physica status solidi (b)•Apr 19, 2010•7 citations