Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

哲夫 小寺, Tetsuo Kodera

Nick Grimm, Katharina Senkalla, Philipp J. Vetter +6 more

The ability to process and store information on surrounding nuclear spins is a major requirement for group-IV color center-based repeater nodes. We demonstrate coherent control of a ^{13}C nuclear spin strongly coupled to a negatively charged germanium-vacancy center in diamond with coherence times beyond 2.5 s at mK temperatures, which is the longest reported for group-IV defects. Detailed analysis allows us to model the system's dynamics, extract the coupling parameters, and characterize noise. We estimate an achievable memory time of 18.1 s with heating limitations considered, paving the way to successful applications as a quantum repeater node.

Katharina Senkalla, Genko T. Genov, Mathias H. Metsch +2 more

Negatively charged group-IV defects in diamond show great potential as quantum network nodes due to their efficient spin-photon interface. However, reaching sufficiently long coherence times remains a challenge. In this work, we demonstrate coherent control of germanium vacancy center (GeV) at millikelvin temperatures and extend its coherence time by several orders of magnitude to more than 20 ms. We model the magnetic and amplitude noise as an Ornstein-Uhlenbeck process, reproducing the experimental results well. The utilized method paves the way to optimized coherence times of group-IV defects in various experimental conditions and their successful applications in quantum technologies.

Ataç İmamoğlu

W. Hoyer, M. Kira, Stefan W. Koch

Yihuang Xiong, Yizhi Zhu, Shay McBride +2 more

Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in diamond is the nitrogen-vacancy (NV) center. However, it suffers from spectral diffusion that negatively impacts optical coherence and is due to the coupling of the emission energy with uncontrolled electric fields. The group IV vacancy complexes on the other hand have shown to be significantly more spectrally-stable as they are centrosymmetric and thus immune to the linear Stark shift. They however suffer from several issues ranging from low operation temperature to low optical efficiency due to dark states and difficulty in stabilizing the right defect charge state. Here we search for alternative to the group IV vacancy complex in diamond by systematically evaluating all possible vacancy complex using high-throughput first-principles computational screening. We identify the defects that combine centrosymmetry, emission in the visible range, as well as favorable and achievable electronic structure promoting higher operation temperature and defect levels well within the band gap. We find Zn$V^{-2}$ to be especially appealing.