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arXiv:1309.0015 · Nature Communications

Bottom-up superconducting and Josephson junction devices inside a group-IV semiconductor

Yun-Pil Shim, Charles Tahan

Published Jul 2, 2014• 41 citations
arXivHTMLPDF
DOI
10.1038/ncomms5225

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Two parallel stacks of coupled Josephson junctions are investigated to clarify the physics of transitions between the rotating and oscillating states and their effect on the IV-characteristics of the system. The detailed study of phase dynamics and bias dependence of the superconducting and diffusion currents allows one to explain all features of simulated IV-characteristics and demonstrate the correspondence in their behavior. The coupling between JJ in the stacks leads to the branching of IV-characteristics and a decrease in the hysteretic region. The crucial role of the diffusion current in the formation of the IV-characteristic of the parallel stacks of coupled Josephson junctions is demonstrated. We discuss the effect of symmetry in a number of junctions in the stacks and show a decrease of the branching in the symmetrical stacks. The observed effects might be useful for development of superconducting electronic devices based on intrinsic Josephson junctions.
Two parallel stacks of coupled Josephson junctions (JJs) are investigated to clarify the physics of transitions between the rotating and oscillating states and their effect on the IV -characteristics of the system. The detailed study of phase dynamics and bias dependence of the superconducting and diffusion currents allows one to explain all features of simulated IV -characteristics and demonstrate the correspondence in their behavior. The coupling between JJ in the stacks leads to the branching of IV -characteristics and a decrease in the hysteretic region. The crucial role of the diffusion current in the formation of the IV -characteristic of the parallel stacks of coupled JJs is demonstrated. We discuss the effect of symmetry in a number of junctions in the stacks and show a decrease of the branching in the symmetrical stacks. The observed effects might be useful for development of superconducting electronic devices based on intrinsic JJs.
The microwave distribution inside a rectangular stack (15 μm×0.72 μm×60 nm) of Bi2Sr2CaCu2O8+x intrinsic Josephson junctions (IJJs) was studied. The stack was microfabricated into a transmission-line geometry, with a-few-hundred-nm-thick Au layers deposited on the top and bottom of the stack. The microwave distribution was monitored by measuring the anomalous suppression of the tunneling critical current of the IJJs with varied microwave power at frequencies in the W band. This technique can provide valuable information on the microwave transmission modes inside the sandwiched stack of IJJs, which is utterly important for the high-frequency device applications using IJJs, such as fluxon-flow THz oscillators.