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Construction of a silicon based solid state quantum computer

Michelle Yvonne Simmons, Steven R. Schofield, Jeremy L. O’Brien, Anna Hamilton, Andrew S. Dzurak, R. G. Clark, BE Kane, Loren N. Pfeiffer, K. W. West

Published Jan 1, 2003• 0 citations
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We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer. The devices are based on a precise array of 31P dopants embedded in 28Si. Fabrication is being pursued via two complementary pathways – a ‘top-down’ approach for near-term production of few-qubit demonstration devices and a ‘bottom-up’ approach for large-scale qubit arrays. The ‘top-down’ approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the ‘bottom-up’ approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.

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Group IV solid state proposals for quantum computation

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The discovery of the quantum factorization algorithm more than a decade ago triggered intense interest in exploring possible physical realizations of quantum computers. Among the many solid state proposals, electron and nuclear spins in Si and group IV related materials have long coherence times and the capability of state preparation, gating and read-out using electric, magnetic and optical fields. Proposals involving silicon seek to take advantage of an existing mature technology and the implicit promise of scalability from solid state materials. Nevertheless, building such quantum systems depends in many cases on the development of fabrication techniques with nearly atomic precision. Managing decoherence, initialization and read-out in any quantum computer remains a daunting task. In this review we summarize proposals and recent developments relevant to the possible realization of a quantum computer constructed out of Si (or group IV) materials.

Journal of Physics Condensed Matter•May 12, 2006•15 citations
We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer. The devices are based on a precise array of 31P dopants embedded in 28Si. Fabrication is being pursued via two complementary pathways – a ‘top-down’ approach for near-term production of few-qubit demonstration devices and a ‘bottom-up’ approach for large-scale qubit arrays. The ‘top-down’ approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the ‘bottom-up’ approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.
Problems in realization of silicon-based solid-state NMR quantum computer with ensemble addressing to qubits are considered. It is presented the extension of Kane's scheme to ensemble approach version with strip gates. For the initialization of nuclear quantum states it is proposed to use the solid-state effect in ENDOR technique whereby the nuclear spins can be practically fully polarized or, that is the same, indirect cooled to the spin temperature less than ~ 1 mK. It is suggested the possible planar silicon topology of such ensemble quantum computer and shown that the measurement with standard NMR methods signal of L ~ 10^3 qubit system may be achieved for a number of ensemble components N >= 10^5. As another variant of ensemble silicon quantum computer the gateless architecture of cellular-automaton is also considered. The decoherence of quantum states in the ensemble quantum computers and ways of its suppression is also discussed.
The discovery of the quantum factorization algorithm more than a decade ago triggered intense interest in exploring possible physical realizations of quantum computers. Among the many solid state proposals, electron and nuclear spins in Si and group IV related materials have long coherence times and the capability of state preparation, gating and read-out using electric, magnetic and optical fields. Proposals involving silicon seek to take advantage of an existing mature technology and the implicit promise of scalability from solid state materials. Nevertheless, building such quantum systems depends in many cases on the development of fabrication techniques with nearly atomic precision. Managing decoherence, initialization and read-out in any quantum computer remains a daunting task. In this review we summarize proposals and recent developments relevant to the possible realization of a quantum computer constructed out of Si (or group IV) materials.