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Study of non-linear optical properties of center and edge δ-doped multiple quantum wells

M. Gambhir, V. Prasad

Published Jan 1, 2018• 0 citations
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Abstract

In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped MQWs.

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In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped MQWs.
In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs multiple quantum well with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped multiple quantum wells.
A detailed theoretical study on the electron-related optical responses in triple δ-doped GaAs quantum wells in the presence of non-resonant, monochromatic intense laser field is presented. For this purpose, we first obtained the bound subband energy levels and their corresponding envelope wave functions of the structure for different central doping concentrations within the effective-mass approximation. Then, we calculate the effect of the non-resonant intense laser field on the optical properties of this structure using the compact-density-matrix approach via the iterative method. We found that the optical absorption coefficients and refractive index changes in the triple δ-doped GaAs quantum well can be modulated by changing the central doping concentration and the intensity of the non-resonant, monochromatic laser field. In addition, it is shown that a sufficiently intense laser field suppresses the multiple quantum well configuration towards a single potential well one and the optical response becomes practically independent of the δ-doping concentration.
Optical properties of quantum well nanostructure for typical GaAs/AlxGa1-xAs are investigated in a new approach. By using the point canonical transformation method and numerical solution of the Schrödinger equation, the energy levels and wave functions of electrons in the quantum well confinement potential are calculated. Then, the effect of position-dependent effective mass on the intersubband optical absorption coefficient and the refractive index changes of the quantum well calculated by compact density matrix method, are studied. Results are compared with the case of constant mass. Our results show that with considering spatially varying electron effective mass linear and nonlinear optical properties increases and shifts toward the lower energies. Researches on this matter open a new field in fundamental and applied physics, and also offer a wide range of potential applications for photonic devices.
In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.
Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/Al x Ga 1−x As spherical quantum dot are theoretically investigated, using the Luttinger—Kohn effective mass equation. So, electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach, respectively. Finally, effects of an impurity, band edge non-parabolicity, incident light intensity and the dot size on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated. Our results indicate that, the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered. Moreover, incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.
This work presents a detailed theoretical study of the linear and third‐order nonlinear optical properties of excitonic δ ‐doped GaAs/AlGaAs multiple quantum wells under an external magnetic field. The electronic structure is modelled within the effective mass approximation, and the correlated excitonic states are obtained by diagonalising the full electron–hole Hamiltonian in a realistic multi‐well potential using a centred finite‐difference method. The Coulomb interaction is treated using a softened potential appropriate for quasi‐one‐dimensional confinement. The model incorporates band offsets, pressure‐ and temperature‐dependent material parameters and magnetic field–induced confinement effects. The linear and third‐order nonlinear optical absorption coefficients, along with the associated refractive index changes, are calculated using the density‐matrix formalism. Magnetic fields (1–5 T) induce blue shifts of 6–12 meV with reduced peak intensity. Increasing barrier width (2–6 nm) produces larger blue shifts (30–40 meV), while pressure and temperature cause characteristic blue and red shifts, respectively. These results demonstrate tuneable excitonic energies and nonlinear optical responses in engineered multiple quantum wells for tuneable photonic device applications. A rigorous theoretical analysis of excitonic linear and third‐order nonlinear optical responses in δ ‐doped GaAs/AlGaAs multiple quantum wells is presented. The electron–hole interaction is treated using a regularised Coulomb potential. The combined influence of magnetic field, hydrostatic pressure, temperature and barrier widths reveals rich and controllable optical behaviour, offering insights for advanced optoelectronic device design.