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Fast Readout in Semiconductor Quantum Dots

Wilson, Tim J

Published Dec 12, 2025• 0 citations
OpenAlex

Abstract

The need for fast readout to measure the state of a quantum dot device has important applications in the capabilities of using them as a means for quantum information processing. Traditional charge sensors used to readout the charge state of a quantum dot device are very robust and sensitive electrometers that have been in use since the late 1980s. They pose an issue to the future of quantum dots as a viable means of quantum computing, and that is in their slow acquisition times of the charge state of the quantum dot. This rate of measurement means that implementing any quantum error correction scheme becomes very difficult or even unfeasible as the coherence times of these semiconductor systems is short compared to charge sensor’s acquisition times. A possibility to speed up the measurement process of the charge state is possible thanks to the atomic molecular and optical (AMO) physics community.Cavity quantum electrodynamics (CQED) is the study of light-matter interactions when both the light and matter are taken to be quantized. A photon may interact with an atom via a dipole interaction to excite it from its ground state to its excited state, and the reverse can occur where the atom emits a photon and decays from its excited state ii to the ground state. This fundamental interaction which has been extensively studied in the AMO community since the early 1960s had been adopted by the superconducting qubit community to measure the state of their qubits. These superconducting qubits, representing atoms, which are coupled to a resonant structure on chip, which represents the photons that can interact with the artificial atom. Since these systems were not traditional trapped or neutral atoms interacting with a photon via a laser, but instead planar circuit structures, the superconducting qubit community re-coined the term cavity quantum electrodynamics to circuit quantum electrodynamics, which we will refer to as cQED.The quantum dot community adapted these methods of what is known as dispersive readout; a capacitive change of the atomic like system, results in a dispersive shift which then alters the characteristic frequency response of the resonant structure. This has allowed for a new kind of charge sensor by means of measuring the resonators response due to its coupling to a quantum dot system. This can be done with very high frequency microwave circuitry, allowing much faster readout than is capable via traditional charge sensors. Thus, allowing a pathway to implement quantum error correction schemes with reasonable times compared to any dephasing or decoherence times of the semiconductor system. Furthermore, such fast readout allows for feedback protocols to be implemented to the system to correct for certain undesirable effects due to instruments or the system itself. Our work focuses on a limit of this cQED interaction of the quantum dots to a resonant structure allowing us to do fast readout of the quantum dot charge states via a dispersive shift.The work I will demonstrate in this dissertation will be in the efforts of fast readout on the charge occupation of a double quantum dot system which is galvanically coupled to a superconducting microwave resonator. This was done in a Si/SiGe heterostructure system where I designed, simulated, and fabricated the device which was optimized to have a stronger dispersive shift signal due to an enhanced gate lever arm that couples to the resonator. I will discuss our results of attaining a minimum integration time of 34.54 ns for a unity signal to noise ratio. This demonstrates a fast readout system in the community iii which could be extended to allow for even better readout speeds with faster instruments than what were available to me for the experiment. I will further discuss our characterization of the hybrid system and how we extracted a charge noise due to charging events between the two dots in our system up to around 10 kHz. This work demonstrates a robust dispersive readout scheme which helps in the scalability of hybrid superconducting-semiconducting architectures for means of quantum information processing.

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Maturing hybrid circuit quantum electrodynamics architectures composed of semiconductor quantum dots and on-chip microwave resonators promise an effective approach for quantum nondemolition readouts in semiconductor systems. Here, we study quantum coherence in a semiconductor charge qubit coupled with a high-impedance resonator. The qubit is controlled by a periodic pulse sequence, and a dispersive measurement is performed by measuring the time-averaged resonator response. From the Rabi oscillation and Ramsey fringe measurements, the coherence time of the charge qubit is determined as T2, Rabi ≈2.7 ns and T2, Ramsey ≈3.5 ns. Compared with the time-resolved (pulsed) measurement, this time-averaged dispersive measurement process eliminates the limitation caused by the resonator response time, enabling a high repetition rate of the pulse sequence in the experiments.

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All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics

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Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot charge qubit strongly coupled to a frequency-tunable high-impedance resonator. We drive qubit transitions with synthesized microwave pulses and perform qubit readout through the state-dependent frequency shift imparted by the qubit on the dispersively coupled resonator. We perform Rabi oscillation, Ramsey fringe, energy relaxation, and Hahn-echo measurements and find significantly reduced decoherence rates down to γ_{2}/2π∼3 MHz corresponding to coherence times of up to T_{2}∼50 ns for charge states in gate-defined quantum dot qubits. We realize Rabi π pulses of width down to σ∼0.25 ns.

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Hybrid circuit quantum electrodynamics (cQED) aims at coupling various quantum degrees of freedom, among which are spin and charge degrees of freedom in gate defined quantum dots, phonons or magnons... with quantized electromagnetic fields in superconducting microwave cavities to investigate fundamental physics questions or for quantum computation and simulation. However, low microwave losses, key for many hybrid cQED experiments, are challenging to achieve given the often exotic and/or complex material stacks (e.g. semiconducting material, ferromagnets, or piezoelectric materials) required to host the various quantum degrees of freedom. In this work, we present a 3D-integration process to overcome this challenge for semi-industrial silicon MOS spin qubits. The process is based on dense indium bump interconnects at a pitch of 10 $\mathrmμ$m and superconducting thin films of Niobium Nitride (NbN). First, we report on DC and RF interconnect properties that demonstrate a high galvanic interconnection yield and internal quality factors above $10^{5}$ in the single photon regime for NbN resonators interrupted by a single indium bump interconnect. Eventually, we fabricated a 3D-integrated hybrid circuit quantum electrodynamics (cQED) device based on a semi-industrial MOS hole double quantum dot and a high impedance NbN resonator. For this device, we report a cavity internal quality factor above 10000 and demonstrate record sensitivity for gate-based dispersive readout of the charge degree of freedom with an SNR of 100 in 300 ns. Finally, we demonstrate strong spin-photon coupling of $g_{s}/2π$ = 75 MHz, which highlights the viability of 3D-integration for quantum dot based hybrid spin circuit quantum electrodynamics and opens to high-fidelity spin readout and microwave photon-based remote spin qubit entanglement.

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The need for fast readout to measure the state of a quantum dot device has important applications in the capabilities of using them as a means for quantum information processing. Traditional charge sensors used to readout the charge state of a quantum dot device are very robust and sensitive electrometers that have been in use since the late 1980s. They pose an issue to the future of quantum dots as a viable means of quantum computing, and that is in their slow acquisition times of the charge state of the quantum dot. This rate of measurement means that implementing any quantum error correction scheme becomes very difficult or even unfeasible as the coherence times of these semiconductor systems is short compared to charge sensor’s acquisition times. A possibility to speed up the measurement process of the charge state is possible thanks to the atomic molecular and optical (AMO) physics community.Cavity quantum electrodynamics (CQED) is the study of light-matter interactions when both the light and matter are taken to be quantized. A photon may interact with an atom via a dipole interaction to excite it from its ground state to its excited state, and the reverse can occur where the atom emits a photon and decays from its excited state ii to the ground state. This fundamental interaction which has been extensively studied in the AMO community since the early 1960s had been adopted by the superconducting qubit community to measure the state of their qubits. These superconducting qubits, representing atoms, which are coupled to a resonant structure on chip, which represents the photons that can interact with the artificial atom. Since these systems were not traditional trapped or neutral atoms interacting with a photon via a laser, but instead planar circuit structures, the superconducting qubit community re-coined the term cavity quantum electrodynamics to circuit quantum electrodynamics, which we will refer to as cQED.The quantum dot community adapted these methods of what is known as dispersive readout; a capacitive change of the atomic like system, results in a dispersive shift which then alters the characteristic frequency response of the resonant structure. This has allowed for a new kind of charge sensor by means of measuring the resonators response due to its coupling to a quantum dot system. This can be done with very high frequency microwave circuitry, allowing much faster readout than is capable via traditional charge sensors. Thus, allowing a pathway to implement quantum error correction schemes with reasonable times compared to any dephasing or decoherence times of the semiconductor system. Furthermore, such fast readout allows for feedback protocols to be implemented to the system to correct for certain undesirable effects due to instruments or the system itself. Our work focuses on a limit of this cQED interaction of the quantum dots to a resonant structure allowing us to do fast readout of the quantum dot charge states via a dispersive shift.The work I will demonstrate in this dissertation will be in the efforts of fast readout on the charge occupation of a double quantum dot system which is galvanically coupled to a superconducting microwave resonator. This was done in a Si/SiGe heterostructure system where I designed, simulated, and fabricated the device which was optimized to have a stronger dispersive shift signal due to an enhanced gate lever arm that couples to the resonator. I will discuss our results of attaining a minimum integration time of 34.54 ns for a unity signal to noise ratio. This demonstrates a fast readout system in the community iii which could be extended to allow for even better readout speeds with faster instruments than what were available to me for the experiment. I will further discuss our characterization of the hybrid system and how we extracted a charge noise due to charging events between the two dots in our system up to around 10 kHz. This work demonstrates a robust dispersive readout scheme which helps in the scalability of hybrid superconducting-semiconducting architectures for means of quantum information processing.
Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed.This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation.Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here.The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.
Robust manipulation and control of quantum systems require a fast and efficient way to read out their state. After cavity quantum electrodynamics (cavity QED) pioneered the manipulation of neutral atoms and ions with light, circuit quantum electrodynamics (circuit QED) became the dominant readout paradigm for artificial atoms such as superconducting circuits, with dispersive readout widely adopted for its stability and efficiency.Recently, longitudinal readout has emerged as a potentially faster readout protocol, but relies on sophisticated parametric modulation, whose underlying mechanisms have remained unclear so far.Longitudinal interactions have been demonstrated across platforms ranging from superconducting qubits to quantum dots, and rely on driving the qubit at the resonator frequency. In different regimes, the coupling emerges parametrically in the drive strength, growing linearly as the drive increases.In this manuscript, we experimentally demonstrate the breakdown of this parametric regime in a two-level quantum dot charge qubit and devise a unifying Floquet theory to establish a universal connection between AC Stark shift, longitudinal coupling and dispersive readout in cQED.We derive analytical results supported by exact numerical simulations that we apply to superconducting and spin-hybrid cQED systems, showcasing the flexibility of faster-than-dispersive longitudinal readout.Inspired by cQED’s readout capabilities in single qubit measurements, we address many-body state readout in quantum simulators.Since the dynamical structure factor (DSF) encodes key information about density excitations in quantum systems, we propose Many-Body Admittance Spectroscopy (MADS) as a weakly invasive method to probe the DSF by analyzing the transmission coefficients of microwave signals coupled to the quantum simulator.We demonstrate the approach on a one-dimensional spinless fermionic chain, representative of quantum dot implementations of the Heisenberg model, and we discuss, supported by numerical simulations obtained using exact diagonalization and density matrix renormalization group (DMRG), the possibility to measure the qualitative modifications of the DSF caused by interactions. Our results highlight the potential of MADS for characterizing the dynamical properties in highly tunable solid-state quantum simulators, extending the toolbox for the readout of quantum simulators.
Maturing hybrid circuit quantum electrodynamics architectures composed of semiconductor quantum dots and on-chip microwave resonators promise an effective approach for quantum nondemolition readouts in semiconductor systems. Here, we study quantum coherence in a semiconductor charge qubit coupled with a high-impedance resonator. The qubit is controlled by a periodic pulse sequence, and a dispersive measurement is performed by measuring the time-averaged resonator response. From the Rabi oscillation and Ramsey fringe measurements, the coherence time of the charge qubit is determined as T2, Rabi ≈2.7 ns and T2, Ramsey ≈3.5 ns. Compared with the time-resolved (pulsed) measurement, this time-averaged dispersive measurement process eliminates the limitation caused by the resonator response time, enabling a high repetition rate of the pulse sequence in the experiments.
Quantum computing is a powerful way of improving computing efficiency. For some specific problems, quantum processor can exponentially reduce computation time compared to the classical computer. Cavity quantum electrodynamics, which studies the coherent interaction between photons in an optical cavity and atoms or other two-level systems, is of enormous significance to quantum computing and quantum information processing. The strong coupling regime where a cavity photon mode and an atom exchange a single quantum energy coherently has attracted extensive interest in varied experimental platforms and systems such as alkali atoms, Rydberg atoms, large spin ensembles, magnons, etc. The semiconductor gate-defined double quantum dot (DQD) system is one of the most promising platforms that possesses advantages of advanced micro-nano processing technology and outstanding scalability. Introducing the concept of cavity QED into superconducting circuits (circuit QED, cQED), provides an opportunity to study interaction between electrons confined in semiconductor DQD and photons trapped in a superconducting resonator. Reaching strong coupling regime in this hybrid system paves the way to large-scale network of quantum computing. Electrons confined in DQD have large electrical dipoles, thus are able to couple to photons with relatively large coupling rate. Whereas, due to the charge noise and other dissipation channels in the hybrid system, the decoherence rate of the system is larger than the coupling rate, leaving the strong coupling a great challenge. In recent years, different methods have been proposed to access the strong coupling regime. Taking advantage of a high-quality heterojunction structure, an overlapping gate architecture and a low-pass LC filter on the DC bias line, the decoherence of the charge qubit and microwave leakage of the resonator can be effectively suppressed. The coupling strength of the hybrid system can be improved utilizing a high impedance resonator which is comprised of high kinetic inductance materials. Spin, which does not interact directly with the electric field, is insensitive to charge noise and has much longer decoherence time than charge qubit. However, the weak interaction results in a small coupling rate between the spin and the photon. To solve this problem, the method of coherent hybridization between the spin and the charge state is proposed to improve the coupling strength. This hybridization can be achieved by applying a non-uniform magnetic field, utilizing spin-orbit interaction or spin exchange interaction. At present, both charge qubits and spin qubits have achieved strong coupling with the cavity and the coupling distance between long-range qubits is greatly expanded as long as millimeters. This review introduces basic ideas about cQED and fundamental elements in semiconductor cQED systems. Recent progress in strong coupling hybrid system and methods for improving coupling structures are discussed. In future research, more efforts will be devoted into long-range transfer of qubit states and photon-mediated two or multi-qubit gates.
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot charge qubit strongly coupled to a frequency-tunable high-impedance resonator. We drive qubit transitions with synthesized microwave pulses and perform qubit readout through the state-dependent frequency shift imparted by the qubit on the dispersively coupled resonator. We perform Rabi oscillation, Ramsey fringe, energy relaxation, and Hahn-echo measurements and find significantly reduced decoherence rates down to γ_{2}/2π∼3 MHz corresponding to coherence times of up to T_{2}∼50 ns for charge states in gate-defined quantum dot qubits. We realize Rabi π pulses of width down to σ∼0.25 ns.
Hybrid circuit quantum electrodynamics (cQED) aims at coupling various quantum degrees of freedom, among which are spin and charge degrees of freedom in gate defined quantum dots, phonons or magnons... with quantized electromagnetic fields in superconducting microwave cavities to investigate fundamental physics questions or for quantum computation and simulation. However, low microwave losses, key for many hybrid cQED experiments, are challenging to achieve given the often exotic and/or complex material stacks (e.g. semiconducting material, ferromagnets, or piezoelectric materials) required to host the various quantum degrees of freedom. In this work, we present a 3D-integration process to overcome this challenge for semi-industrial silicon MOS spin qubits. The process is based on dense indium bump interconnects at a pitch of 10 μ\mathrmμμm and superconducting thin films of Niobium Nitride (NbN). First, we report on DC and RF interconnect properties that demonstrate a high galvanic interconnection yield and internal quality factors above 10510^{5}105 in the single photon regime for NbN resonators interrupted by a single indium bump interconnect. Eventually, we fabricated a 3D-integrated hybrid circuit quantum electrodynamics (cQED) device based on a semi-industrial MOS hole double quantum dot and a high impedance NbN resonator. For this device, we report a cavity internal quality factor above 10000 and demonstrate record sensitivity for gate-based dispersive readout of the charge degree of freedom with an SNR of 100 in 300 ns. Finally, we demonstrate strong spin-photon coupling of gs/2πg_{s}/2πgs​/2π = 75 MHz, which highlights the viability of 3D-integration for quantum dot based hybrid spin circuit quantum electrodynamics and opens to high-fidelity spin readout and microwave photon-based remote spin qubit entanglement.