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IEICE Transactions on Electronics

Investigation of High-T c Single Flux Quantum Logic Gates

Kazuo Saitoh, Hiroyuki Fuke

Published Oct 25, 1997• 0 citations
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Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high-Tc material and Josephson junction (NdBa2Cu3O7−δ and focused ion beam junction) have been investigated. The logic gate consists of an rf-superconducting quantum interference device (rf-SQUID) and a dc-SQUID. In the logic gate, elementary SFQ logic operations, such as generating SFQ (dc/SFQ) and providing simultaneous readout (SFQ/dc), have been confirmed up to 50 K. The temperature dependencies of the output voltage level and the critical current-normal resistance (IcRn) product were compared, and the decreasing tendency of the output voltage level for increasing temperature was found to be more rapid than that of the IcRn product.