We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate the atomic transport of bosons across a variety of lattice configurations. We demonstrate how the behavior of an electronic diode, a field-effect transistor, and a bipolar junction transistor can be realized with neutral, ultracold atoms trapped in optical lattices. An analysis of the current fluctuations is provided for the case of the atomtronic diode. Finally, we show that it is possible to demonstrate and logic gate behavior in an optical lattice.We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate the atomic transport of bosons across a variety of lattice configurations. We demonstrate how the behavior of an electronic diode, a field-effect transistor, and a bipolar junction transistor can be realized with neutral, ultracold atoms trapped in optical lattices. An analysis of the current fluctuations is provided for the case of the atomtronic diode. Finally, we show that it is possible to demonstrate and logic gate behavior in an optical lattice.

arXiv:1005.3069Physical Review AJul 28, 201052 citations

Fast, all-optical logic gates and transistor functionalities using a room-temperature atomic controlled Kerr gate

R. B. Li, L. Deng, E. W. Hagley

We demonstrate all-optical multilogic gate operations and transistor functionalities using a Kerr phase gate method in a room-temperature $^{85}\mathrm{Rb}$ vapor. Two symmetric Mach-Zehnder interferometers are constructed in the same vapor cell in which a Raman gain medium is established. We show three basic logic gates (and, or, and not) by controlling the output combinations from the two interferometers. With one weakly driven interferometer acting as the phase control light for a strongly driven interferometer, we further demonstrate optical field-effect transistor functionalities. More complex combinations of this Kerr phase gate method and scheme allow all eight basic logic gate operations including the controlled-not gate to be constructed and implemented.We demonstrate all-optical multilogic gate operations and transistor functionalities using a Kerr phase gate method in a room-temperature $^{85}\mathrm{Rb}$ vapor. Two symmetric Mach-Zehnder interferometers are constructed in the same vapor cell in which a Raman gain medium is established. We show three basic logic gates (and, or, and not) by controlling the output combinations from the two interferometers. With one weakly driven interferometer acting as the phase control light for a strongly driven interferometer, we further demonstrate optical field-effect transistor functionalities. More complex combinations of this Kerr phase gate method and scheme allow all eight basic logic gate operations including the controlled-not gate to be constructed and implemented.

Physical Review ADec 2, 201411 citations

Fundamental Atomtronic Circuit Elements

Jeffrey Lee, Brian McIlvain, Christopher J. Lobb +1 more

Bulletin of the American Physical SocietyJun 6, 20120 citations

Atomtronics: Ultracold-atom analogs of electronic devices

B. T. Seaman, Meret Krämer, Dana Z. Anderson +1 more

Atomtronics focuses on atom analogs of electronic materials, devices, and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the gapped many-body energy spectrum, cold atoms in a lattice exhibit insulatorlike or conductorlike properties. $P$ -type and $N$ -type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.Atomtronics focuses on atom analogs of electronic materials, devices, and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the gapped many-body energy spectrum, cold atoms in a lattice exhibit insulatorlike or conductorlike properties. $P$-type and $N$-type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.

arXiv:cond-mat/0606625Physical Review AFeb 20, 2007273 citations

We demonstrate all-optical multilogic gate operations and transistor functionalities using a Kerr phase gate method in a room-temperature

^{85}\mathrm{Rb}

vapor. Two symmetric Mach-Zehnder interferometers are constructed in the same vapor cell in which a Raman gain medium is established. We show three basic logic gates (and, or, and not) by controlling the output combinations from the two interferometers. With one weakly driven interferometer acting as the phase control light for a strongly driven interferometer, we further demonstrate optical field-effect transistor functionalities. More complex combinations of this Kerr phase gate method and scheme allow all eight basic logic gate operations including the controlled-not gate to be constructed and implemented.

P

-type and

N

-type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.