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arXiv:cond-mat/0606625 · Physical Review A

Atomtronics: Ultracold-atom analogs of electronic devices

B. T. Seaman, Meret Krämer, Dana Z. Anderson, Murray Holland

Published Feb 20, 2007• 273 citations
arXivHTMLPDF

Abstract

Atomtronics focuses on atom analogs of electronic materials, devices, and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the gapped many-body energy spectrum, cold atoms in a lattice exhibit insulatorlike or conductorlike properties. $P$-type and $N$-type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.

DOI
10.1103/physreva.75.023615

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Quantum-Atom Optics Downunder (QAO)•Jan 1, 2007•0 citations
Atomtronics focuses on atom analogs of electronic materials, devices, and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the gapped many-body energy spectrum, cold atoms in a lattice exhibit insulatorlike or conductorlike properties. PPP-type and NNN-type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.
A collection of ultracold atoms subject to a spatially periodic potential energy can exhibit behavior analogous to electrons in a crystal lattice. This fact was profoundly established by the demonstration of the superfluid to Mott-insulator transition of atoms in an optical lattice. An optical lattice consists of atoms subject to a periodic potential produced by interfering laser beams. The analogy between ultracold atoms in optical lattices and electrons in crystal lattices is manifestly a rich one. Recently, we have made a a proposal to extend the analogy to doped semiconductor materials. Lattice ”defects” achieve behaviors similar to P-type and N-type semiconductor materials. Naturally the interest is to adjoin P-type and N-type atoms lattices to produce an atom diode, and then an NPN or PNP lattice ”sandwich” to achieve bipolar transistor-like behavior for ultracold atoms. Such heterogeneous structures can indeed be made to mimic their electronic counterparts.
Abstract : Theoretical work established a quantum framework in which to address atom analogs of electronic devices and circuits. Initial focus was on isolated elements, particularly atom diodes and atom transistors. Two theoretical approaches addressed different device strategies, one based on double and triple potential wells, the other based on periodic structures that are analogous to semiconductor materials. The first approach is suited to implementations using ultracold atom chip technology, whereas the second is amenable to optical lattice experiments. Both approaches established the presence of atom flux gain in a simple transistor configuration. Further theoretical work developed an open quantum systems approach to simple yet complete circuits. This work provides the analytical tools for treating more complex atomtronic circuits. Corresponding experimental work focused on building an atom chip based Bose-Einstein Condensation (BEC) system for carrying out atom transistor experiments. Chip development demonstrated technology for fabricating structures having nanowires suspended across a substrate groove to avoid the deleterious impact of Van der Waals forces. This work established the foundation of atomtronics and the possibility of experimentally demonstrating such circuits in the near future.
Research in the field of atomtronics aims to develop a new paradigm for the use of ultracold atomic systems in a manner that mimics the functionality of electronic circuits and devices. Given the ubiquity of the electronic transistor and its application to a vast array of signal processing tasks, the development of its atomtronic counterpart is of significant interest. This dissertation presents the experimental studies of two atomtronic circuit elements: a battery and transistor. Experiments are conducted in an atom-chip-based apparatus utilizing hybrid magnetic and optical trapping techniques that enable one to "pattern" atomtronic circuit elements. An atomtronic battery is realized in a double-well trapping potential in which a finite-temperature Bose-Einstein condensate is prepared in a non-equilibrium state to generate thermodynamic gradients that drive atom current flow. Powered by the atomtronic battery, a triple-well atomtronic transistor is demonstrated, and quasi-steady-state behavior of the device is characterized. Results are found to be in agreement with a semiclassical model of the transistor that is also used to study the active properties of the device, including current gain. Based on these results, future directions regarding signal processing operations are proposed.
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.
A collection of ultracold atoms subject to a spatially periodic potential energy can exhibit behavior analogous to strongly-correlated electrons in a crystal lattice. This was shown recently by the experimental demonstration of the superfluid to Mott-insulator quantum phase transition for a three-dimensional optical lattice. An optical lattice consists of atoms subject to a periodic potential produced by interfering laser beams. The analogy between ultracold atoms in optical lattices and electrons in crystal lattices is manifestly a rich one. One interesting area in particular is the correspondence between the fractional quantum Hall effect for electrons in strong magnetic fields and rotating quantum gases. Here strongly-correlated effects can potentially be enhanced utilizing rotating optical lattices. Recently, we have also made a a proposal to extend the analogy to doped semiconductor materials. Lattice “defects” achieve behaviors similar to P-type and N-type semiconductor materials. Naturally the interest is to adjoin P-type and N-type atoms lattices to produce an atom diode, and then an NPN or PNP lattice “sandwich” to achieve bipolar transistor-like behavior for ultracold atoms. Such heterogeneous structures can indeed be made to mimic their electronic counterparts.