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Atomtronics: Research in Ultracold Atom Semiconductor Device Analogs

Dana Z. Anderson

Published Aug 1, 2010• 0 citations
OpenAlex

Abstract

Abstract : Theoretical work established a quantum framework in which to address atom analogs of electronic devices and circuits. Initial focus was on isolated elements, particularly atom diodes and atom transistors. Two theoretical approaches addressed different device strategies, one based on double and triple potential wells, the other based on periodic structures that are analogous to semiconductor materials. The first approach is suited to implementations using ultracold atom chip technology, whereas the second is amenable to optical lattice experiments. Both approaches established the presence of atom flux gain in a simple transistor configuration. Further theoretical work developed an open quantum systems approach to simple yet complete circuits. This work provides the analytical tools for treating more complex atomtronic circuits. Corresponding experimental work focused on building an atom chip based Bose-Einstein Condensation (BEC) system for carrying out atom transistor experiments. Chip development demonstrated technology for fabricating structures having nanowires suspended across a substrate groove to avoid the deleterious impact of Van der Waals forces. This work established the foundation of atomtronics and the possibility of experimentally demonstrating such circuits in the near future.

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Atomtronics focuses on atom analogs of electronic materials, devices, and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the gapped many-body energy spectrum, cold atoms in a lattice exhibit insulatorlike or conductorlike properties. $P$-type and $N$-type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.

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Experimental Realization of Atomtronic Circuit Elements in Non-Equilibrium Ultracold Atomic Systems

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Research in the field of atomtronics aims to develop a new paradigm for the use of ultracold atomic systems in a manner that mimics the functionality of electronic circuits and devices. Given the ubiquity of the electronic transistor and its application to a vast array of signal processing tasks, the development of its atomtronic counterpart is of significant interest. This dissertation presents the experimental studies of two atomtronic circuit elements: a battery and transistor. Experiments are conducted in an atom-chip-based apparatus utilizing hybrid magnetic and optical trapping techniques that enable one to "pattern" atomtronic circuit elements. An atomtronic battery is realized in a double-well trapping potential in which a finite-temperature Bose-Einstein condensate is prepared in a non-equilibrium state to generate thermodynamic gradients that drive atom current flow. Powered by the atomtronic battery, a triple-well atomtronic transistor is demonstrated, and quasi-steady-state behavior of the device is characterized. Results are found to be in agreement with a semiclassical model of the transistor that is also used to study the active properties of the device, including current gain. Based on these results, future directions regarding signal processing operations are proposed.

•Jan 1, 2016•0 citations

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A generalized open quantum theory that models the transport properties of bosonic systems is derived from first principles. This theory is shown to correctly describe the long-time behavior of a specific class of non-Markovian system-reservoir interactions. Starting with strongly-interacting bosons in optical lattices, we use this theory to construct a novel, one-to-one analogy with electronic systems, components, and devices. Beginning with the concept of a wire, we demonstrate theoretically the ultracold boson analog of a semiconductor diode, a field-effect transistor, and a bipolar junction transistor. In a manner directly analogous to electronics, we show that it is possible to construct combinatorial logic structures from the fundamental electronic-emulating devices just described. In this sense, our proposal for atomtronic devices is a useful starting point for arrangements with more complex functionality. In addition we show that the behavior of the proposed diode should also be possible utilizing a weakly-interacting, coherent bosonic drive. After demonstrating the formal equivalence between systems comprised of bosons in optical lattices and photons in nonlinear cavity networks, we use the formalism to extend the ideas and concepts developed earlier in ultracold boson systems to nonlinear optical systems. We adapt the open quantum system theory to this new physical environment, and demonstrate theoretically how a few-photon optical diode can be realized in a coupled nonlinear cavity system. An analysis of different practical cavity quantum electrodynamics systems is presented and experimentally-viable candidates are evaluated.

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We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate the atomic transport of bosons across a variety of lattice configurations. We demonstrate how the behavior of an electronic diode, a field-effect transistor, and a bipolar junction transistor can be realized with neutral, ultracold atoms trapped in optical lattices. An analysis of the current fluctuations is provided for the case of the atomtronic diode. Finally, we show that it is possible to demonstrate and logic gate behavior in an optical lattice.

arXiv:1005.3069•Physical Review A•Jul 28, 2010•52 citations
Abstract : Theoretical work established a quantum framework in which to address atom analogs of electronic devices and circuits. Initial focus was on isolated elements, particularly atom diodes and atom transistors. Two theoretical approaches addressed different device strategies, one based on double and triple potential wells, the other based on periodic structures that are analogous to semiconductor materials. The first approach is suited to implementations using ultracold atom chip technology, whereas the second is amenable to optical lattice experiments. Both approaches established the presence of atom flux gain in a simple transistor configuration. Further theoretical work developed an open quantum systems approach to simple yet complete circuits. This work provides the analytical tools for treating more complex atomtronic circuits. Corresponding experimental work focused on building an atom chip based Bose-Einstein Condensation (BEC) system for carrying out atom transistor experiments. Chip development demonstrated technology for fabricating structures having nanowires suspended across a substrate groove to avoid the deleterious impact of Van der Waals forces. This work established the foundation of atomtronics and the possibility of experimentally demonstrating such circuits in the near future.
Atomtronics focuses on atom analogs of electronic materials, devices, and circuits. A strongly interacting ultracold Bose gas in a lattice potential is analogous to electrons in solid-state crystalline media. As a consequence of the gapped many-body energy spectrum, cold atoms in a lattice exhibit insulatorlike or conductorlike properties. PPP-type and NNN-type material analogs are created by introducing impurity sites into the lattice. Current through an atomtronic wire is generated by connecting the wire to an atomtronic battery which maintains the two contacts at different chemical potentials. The design of an atomtronic diode with a strongly asymmetric current-voltage curve exploits the existence of superfluid and insulating regimes in the phase diagram. The atom analog of a bipolar junction transistor exhibits large negative gain. Our results provide the building blocks for more advanced atomtronic devices and circuits such as amplifiers, oscillators, and fundamental logic gates.
Research in the field of atomtronics aims to develop a new paradigm for the use of ultracold atomic systems in a manner that mimics the functionality of electronic circuits and devices. Given the ubiquity of the electronic transistor and its application to a vast array of signal processing tasks, the development of its atomtronic counterpart is of significant interest. This dissertation presents the experimental studies of two atomtronic circuit elements: a battery and transistor. Experiments are conducted in an atom-chip-based apparatus utilizing hybrid magnetic and optical trapping techniques that enable one to "pattern" atomtronic circuit elements. An atomtronic battery is realized in a double-well trapping potential in which a finite-temperature Bose-Einstein condensate is prepared in a non-equilibrium state to generate thermodynamic gradients that drive atom current flow. Powered by the atomtronic battery, a triple-well atomtronic transistor is demonstrated, and quasi-steady-state behavior of the device is characterized. Results are found to be in agreement with a semiclassical model of the transistor that is also used to study the active properties of the device, including current gain. Based on these results, future directions regarding signal processing operations are proposed.
A collection of ultracold atoms subject to a spatially periodic potential energy can exhibit behavior analogous to electrons in a crystal lattice. This fact was profoundly established by the demonstration of the superfluid to Mott-insulator transition of atoms in an optical lattice. An optical lattice consists of atoms subject to a periodic potential produced by interfering laser beams. The analogy between ultracold atoms in optical lattices and electrons in crystal lattices is manifestly a rich one. Recently, we have made a a proposal to extend the analogy to doped semiconductor materials. Lattice ”defects” achieve behaviors similar to P-type and N-type semiconductor materials. Naturally the interest is to adjoin P-type and N-type atoms lattices to produce an atom diode, and then an NPN or PNP lattice ”sandwich” to achieve bipolar transistor-like behavior for ultracold atoms. Such heterogeneous structures can indeed be made to mimic their electronic counterparts.
A generalized open quantum theory that models the transport properties of bosonic systems is derived from first principles. This theory is shown to correctly describe the long-time behavior of a specific class of non-Markovian system-reservoir interactions. Starting with strongly-interacting bosons in optical lattices, we use this theory to construct a novel, one-to-one analogy with electronic systems, components, and devices. Beginning with the concept of a wire, we demonstrate theoretically the ultracold boson analog of a semiconductor diode, a field-effect transistor, and a bipolar junction transistor. In a manner directly analogous to electronics, we show that it is possible to construct combinatorial logic structures from the fundamental electronic-emulating devices just described. In this sense, our proposal for atomtronic devices is a useful starting point for arrangements with more complex functionality. In addition we show that the behavior of the proposed diode should also be possible utilizing a weakly-interacting, coherent bosonic drive. After demonstrating the formal equivalence between systems comprised of bosons in optical lattices and photons in nonlinear cavity networks, we use the formalism to extend the ideas and concepts developed earlier in ultracold boson systems to nonlinear optical systems. We adapt the open quantum system theory to this new physical environment, and demonstrate theoretically how a few-photon optical diode can be realized in a coupled nonlinear cavity system. An analysis of different practical cavity quantum electrodynamics systems is presented and experimentally-viable candidates are evaluated.
We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate the atomic transport of bosons across a variety of lattice configurations. We demonstrate how the behavior of an electronic diode, a field-effect transistor, and a bipolar junction transistor can be realized with neutral, ultracold atoms trapped in optical lattices. An analysis of the current fluctuations is provided for the case of the atomtronic diode. Finally, we show that it is possible to demonstrate and logic gate behavior in an optical lattice.