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arXiv:1207.3108 · Physics Letters A

An atomtronics transistor for quantum gates

Miroslav Gajdacz, Tomáš Opatrný, Kunal K. Das

Published Apr 28, 2014• 16 citations
arXivHTMLPDF
DOI
10.1016/j.physleta.2014.04.043

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The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well potential -- source, gate, and drain -- modeled by the time-dependent Gross-Pitaevskii equation. We systematically explore the dependence of the drain population and the current on the source bias potential and the strength of the interatomic interaction. Our simulations reveal signatures of resonant tunneling when the source chemical potential aligns with discrete energy levels in the gate well, leading to coherent matter-wave emission in the drain. Contrary to previous many-body studies that predicted interaction-induced current gain via coupling to gate well modes, our results suggest that coherence in the drain is primarily governed by single-particle resonances, with no evident broadening from nonlinear coupling.
We derive a quantum master equation to treat quantum systems interacting with multiple reservoirs. The formalism is used to investigate the atomic transport of bosons across a variety of lattice configurations. We demonstrate how the behavior of an electronic diode, a field-effect transistor, and a bipolar junction transistor can be realized with neutral, ultracold atoms trapped in optical lattices. An analysis of the current fluctuations is provided for the case of the atomtronic diode. Finally, we show that it is possible to demonstrate and logic gate behavior in an optical lattice.