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arXiv:2510.03398

Coherent matter wave emission from an atomtronic transistor

Sasanka Dowarah, Du, Mengxin, Alan Zanders, Shengwang Du, Michael Kolodrubetz, Chuanwei Zhang

Published Oct 3, 2025• 0 citations
arXivHTMLPDF

Abstract

The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well potential -- source, gate, and drain -- modeled by the time-dependent Gross-Pitaevskii equation. We systematically explore the dependence of the drain population and the current on the source bias potential and the strength of the interatomic interaction. Our simulations reveal signatures of resonant tunneling when the source chemical potential aligns with discrete energy levels in the gate well, leading to coherent matter-wave emission in the drain. Contrary to previous many-body studies that predicted interaction-induced current gain via coupling to gate well modes, our results suggest that coherence in the drain is primarily governed by single-particle resonances, with no evident broadening from nonlinear coupling.

DOI
10.48550/arxiv.2510.03398

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The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well potential -- source, gate, and drain -- modeled by the time-dependent Gross-Pitaevskii equation. We systematically explore the dependence of the drain population and the current on the source bias potential and the strength of the interatomic interaction. Our simulations reveal signatures of resonant tunneling when the source chemical potential aligns with discrete energy levels in the gate well, leading to coherent matter-wave emission in the drain. Contrary to previous many-body studies that predicted interaction-induced current gain via coupling to gate well modes, our results suggest that coherence in the drain is primarily governed by single-particle resonances, with no evident broadening from nonlinear coupling.
A self-consistent theoretical treatment of a triple-well atomtronic transistor circuit reveals the mechanism of gain, conditions of oscillation, and properties of the subsequent coherent matter waves emitted by the circuit. A Bose-condensed reservoir of atoms in a large source well provides a chemical potential that drives circuit dynamics. The theory is based on the ansatz that a condensate arises in the transistor gate well as a displaced ground state, that is, one that undergoes dipole oscillation in the well. That gate atoms remain condensed and oscillating is shown to be a consequence of the cooling induced by the emission of a matter wave into the vacuum. Key circuit parameters such as the transistor transconductance and output current are derived by transitioning to a classical equivalent circuit model. Voltage-like and current-like matter-wave circuit wave fields are introduced in analogy with microwave circuits, as well as an impedance relationship between the two. This leads to a notion of a classically coherent matter wave that is the dual of a coherent electromagnetic wave and which is distinct from a de Broglie matter wave associated with cold atoms. Subjecting the emitted atom flux to an atomic potential that will reduce the de Broglie wavelength, for example, will increase the classical matter-wave wavelength. Quantization of the classical matter-wave fields leads to the dual of the photon that is identified not as an atom but as something else, which is here dubbed a ``matteron.''
The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined temperature and chemical potential. Energetic atoms flow from the source, across the gate, and into the drain where they are removed using a resonant light beam. The manifestation of atom–atom interactions and dissipation is evidenced by a rapid population growth in the initially vacant gate well. The transport dynamics are shown to depend strongly on a feedback parameter determined by the relative heights of the two barriers forming the gate region. For a range of feedback parameter values, experiments establish that the gate atoms develop a larger chemical potential and lower temperature than those in the source.
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.
An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.
We simulate transport in an atomtronic circuit of a Bose-Einstein condensate that flows from a source region into a drain through a gate channel. The time-dependent Gross-Pitaevskii equation (GPE) solution matches the data of a recent experiment. The atomtronic circuit is found to be similar to a variable-resistance RLC circuit, which is critically damped at early times and shows LC\mathit{LC}LC oscillations later. The GPE also predicts atom loss from the drain. Studies of the dependence of condensate transport upon gate parameters suggest the utility of the GPE for investigation of atomtronic circuits.