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IEEE Journal of Solid-State Circuits

A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions

Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, S. Halama, Judi Parvizinejad, Marco Bonkowski, Hiroki Ishikuro, C. Ospelkaus, Вадим Іссаков

Published Dec 2, 2025• 2 citations
Publisher

Abstract

This article presents a cryo-BiCMOS system on chip (SoC) designed for single and two-qubit gate operations for quantum computers (QCs) based on beryllium trapped-ions (TIs). Signal generation from 0.7 to 1.6 GHz is supported, covering all microwave transitions in a${}^{9}\text {Be}^{+}$QC realization. An integrated 48-kbit waveform memory is implemented for improved two-qubit gate fidelity. The fabricated IC is verified in a 4 K environment with up to 4 qubits, thus enabling quantum processor unit (QPU) cointegration. IC operation up to RT ensures compatibility with future system realizations. Measurements demonstrate qubit state control with an oscillation amplitude of 94% before SPAM correction and Rabi oscillation rate of 172 kHz. Evaluations of long sequences of$\sigma _{x}$gates indicate control of the quantum state with high quality. Interaction with one computational zone is possible at a total power consumption of 86 mW translating to 21.5 mW/qubit in the presented measurements. Comparison with the state-of-the-art controller reveals drastic power and form-factor reduction at comparable performance, thus paving the way for a scalable TI platform. The chip is fabricated in a 0.13-$\mathrm {\mu }\mathrm {m}$SiGe BiCMOS technology. To the best of our knowledge, this is the first reported from-scratch system design for TI-based QC concluding with a qubit state manipulation demonstration.

DOI
10.1109/jssc.2025.3632204

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•Jan 1, 2021•0 citations
This article presents a cryo-BiCMOS system on chip (SoC) designed for single and two-qubit gate operations for quantum computers (QCs) based on beryllium trapped-ions (TIs). Signal generation from 0.7 to 1.6 GHz is supported, covering all microwave transitions in a9Be+{}^{9}\text {Be}^{+}9Be+QC realization. An integrated 48-kbit waveform memory is implemented for improved two-qubit gate fidelity. The fabricated IC is verified in a 4 K environment with up to 4 qubits, thus enabling quantum processor unit (QPU) cointegration. IC operation up to RT ensures compatibility with future system realizations. Measurements demonstrate qubit state control with an oscillation amplitude of 94% before SPAM correction and Rabi oscillation rate of 172 kHz. Evaluations of long sequences ofσx\sigma _{x}σx​gates indicate control of the quantum state with high quality. Interaction with one computational zone is possible at a total power consumption of 86 mW translating to 21.5 mW/qubit in the presented measurements. Comparison with the state-of-the-art controller reveals drastic power and form-factor reduction at comparable performance, thus paving the way for a scalable TI platform. The chip is fabricated in a 0.13-μm\mathrm {\mu }\mathrm {m}μmSiGe BiCMOS technology. To the best of our knowledge, this is the first reported from-scratch system design for TI-based QC concluding with a qubit state manipulation demonstration.
This paper presents a fully integrated System-on-Chip operating from 295 K down to 4 K, capable of generating 0.7 GHz to 1.5 GHz microwave signals for9Be+trapped-ion quantum computer realizations. The proposed design comprises a three-channel waveform generator with integrated 48 kbit memory to generate arbitrary envelope-modulated control signals while consuming only 94 mW, which in the targeted system results in 1.9 mW/qubit. The IC is capable of driving multiple electrodes as required for all gate operations. The chip was fabricated in a 0.13µm SiGe BiCMOS technology. To the best of the authors’ knowledge, this is the first reported integrated SoC solution for qubit state control in a trapped-ion quantum computer.
Trapped ions (TI) are one of the leading platforms for the realization of a universal quantum computer (QC). They feature several advantages compared to competing technologies. Key benefits of TI qubits utilizing hyperfine transitions are the long achievable coherence time T2 of up to hours and the almost infinite excited state lifetime T1 [1]. The error rate of single-qubit operations is already in the 10–6range [2], while the error rate of entangled two-qubit gates approaches the fault tolerance error-correction threshold of 10–4[3], [4]. The combined state preparation and measurement fidelity depends on the ion species and is usually above 99.5%. Ion traps can comfortably work at moderate cryogenic temperatures around 4 K, and even room temperature (RT) operation has been demonstrated [4]. The quantum-charge-coupled-device (QCCD) [5], [6] architecture allows scalable ion trapping and shuttling, thus enabling all-to-all qubit interconnection.
This article presents a fully integrated Cryo-CMOS system on chip (SoC) for quantum computing. The proposed SoC integrates a radio frequency (RF) pulse modulator for qubit state manipulation, a multi-tone signal generator and a coherent receiver for qubit state readout, and 22 DACs for high-speed voltage pulsing of qubit gates. By adopting frequency division multiplexing and direct digital synthesis (DDS), the RF pulse modulator can control up to 16 qubits over a single RF line, and the readout receiver can detect the state of up to six qubits simultaneously. The proposed SoC also integrates a microcontroller for low latency on-chip signal processing and increased flexibility in implementing quantum instruction sets. A detailed analysis of qubit-state readout fidelity and the impact of finite DAC resolution on two-qubit gate fidelity is also included in this article, together with an electrical specification summary. The SoC is implemented in Intel’s 22 nm FFL fin field-effect transistor (FinFET) process, and it is characterized both at room and 4 K temperatures. The performance of each specific block is measured, with the readout characterized in a loop-back configuration. Generation of the control signals required for a full Rabi oscillation experiment is also demonstrated. This article also describes the cryogenic thermalization techniques used to integrate the SoC in the dilution refrigerator and shows temperature measurements during operation.
This paper presents an overview of the latest research results on integrated, cryogenic-compatible electronics for ion shuttling operation in Trapped-Ion Quantum Computers (TIQCs). Integrated circuit (IC) realization is essential to enable system scaling towards a larger number of qubits. Firstly, we review the specific challenges related to the shuttling operation and ion confinement. Consequently, implications on circuit design of an integrated shuttling controller system on chip (SoC) are discussed. Particularly, among other circuit design parameters, we analyze in detail the requirements on power and area consumption, noise performance, and cryogenic-compatibility. Secondly, we provide an overview on reported discrete solutions, eventually highlighting the need for a dedicated integrated shuttling controller SoC. Hence, state of the art integrated shuttling controller approaches are presented and reviewed. Finally, we conclude the paper with an outlook on promising integrated circuit concepts for shuttling controllers.
A universal fault-tolerant quantum computer will require large-scale control systems that can realize all the waveforms required to implement a gateset that is universal for quantum computing. Optimization of such a system, which must be precise and extensible, is an open research challenge. Here, we present a cryogenic quantum control integrated circuit (IC) that is able to control all the necessary degrees of freedom of a two-qubit subcircuit of a superconducting quantum processor. Specifically, the IC contains a pair of 4–8-GHz RF pulse generators forXYXYXYcontrol, three baseband current generators for qubit and coupler frequency control, and a digital controller that includes a sequencer for gate sequence playback. After motivating the architecture, we describe the circuit-level implementation details and present experimental results. Using standard benchmarking techniques, we show that the cryogenic CMOS (cryo-CMOS) IC is able to execute the components of a gateset that is universal for quantum computing while achieving single-qubitXYXYXYandZZZaverage gate error rates of 0.17%–0.36% and 0.14%–0.17%, respectively, as well as two-qubit average cross-entropy benchmarking (XEB) cycle error rates of 1.2%. These error rates, which were achieved while dissipating just 4 mW/qubit, are comparable to the measured error rates obtained using baseline room-temperature electronics.
Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the quantum bit (qubit). It can be implemented in a number of technologies, such as superconducting qubits, spin qubits, photonic systems, trapped ions and NV-centers. Solid-state superconducting qubits and spin qubits seem to be the most promising ones, as shown by the recent demonstration of quantum supremacy with a superconducting qubit processor. Such quantum processors, to operate in the quantum regime, require very low temperatures around 10 mK, and they are hence kept inside dilution fridges. The electronics required to read out and control such processors is typically realized by discrete components or bulky scientific instruments at room temperature wired into the dilution fridge. Such approach is only feasible until few (< 100) qubits are handled, but it is not scalable for million-qubit processors required for fault-tolerant operation. In this thesis, readout and control electronics is proposed to be integrated and operated directly at cryogenic temperatures, in close proximity with the qubits and potentially even co-integrated. CMOS technology is advocated for its scalability, compactness and low prototyping cost, to create a comprehensive cryo-CMOS class of fully-integrated transceivers to read out and control solid-state qubits. In particular, the thesis focuses on cryo-CMOS radio-frequency integrated circuits for the readout of silicon quantum computers, looking to integrate the whole readout system, from the quantum layer to the room temperature user interface. Cryogenic CMOS devices are explored first, to lay the foundations of integrated circuit design. The realization of quantum dots in standard CMOS technology is explored as a platform to realize solid-state qubit arrays, demonstrating functionality at 50 mK and good reproducibility. Moreover, the operation of integrated transistors at 50 mK and 4.2 K is explored to understand their basic cryogenic functionality, through characterization and modeling. Then also integrated passives, such as capacitors, inductors and transformers, are studied and modeled at cryogenic temperatures. Then, a fully-integrated readout platform spanning across all the blocks needed for dispersive readout is proposed. A fully-integrated matrix of quantum dots with radio-frequency gate-based readout capabilities is demonstrated along with time- and frequency-multiplexing. This quantum-classical circuit shows all the features for a scalable approach and is the core of the platform following it. A cryogenic CMOS circulator based on a new all-pass filter architecture is demonstrated, to be used as integrated replacement for current bulky counterparts; it allows power reduction, insertion loss and bandwidth enhancement with respect to state-of-the-art integrated circulators. The rest of the front-end is also explored with dedicated test multiplexers, a low noise-amplifier and an oscillator, that are finally merged in a single fully-integrated low-noise receiver with frequency synthesizer operating at 3.5 K for scalable multiplexed readout of silicon qubits. The platform presented in this thesis, across temperature boundaries, carries all the features required for future scalable silicon quantum computing platforms and could therefore form their core.