We propose machine learning-driven grating coupler in silicon nitride for trapped Ca+ ion qubit manipulation, achieving −28.3 dB crosstalk, 0.56 μm beam radius, and 34% efficiency, paving the way to high-fidelity trapped-ion quantum information systems..
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si 3 N 4 ) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb + -applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
In this work, we report the design and optimization of photonics interposer for addressing trapped ion in a quantum computing system. The interposer is built on commercial SOI platform comprising of grating couplers and waveguide. 1,092 nm light beam can be coupled into the input coupler and propagates along the waveguide, which is eventually directed towards the trapped 88Sr+ ion qubit. Considering the coupling efficiency of both input and output coupler, the power efficiency reaching the trapped ion can be estimated to be ∼ 16%, and the output 1,092 nm light can be coupled onto the trapped ion qubit for addressing.
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from λ = 405 - 880 nm with -27 dB average intensity crosstalk at 5μm pitch. We trap 40Ca+ and 138Ba+ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.