Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 68 μm above the chip. Simulations show that the couplers achieve a diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE 00 and TE 10 modes results in crosstalk of –20 dB to –30 dB at ion separations of 5–8 μm when addressing ions individually, and down to –60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Trapped-ion quantum computing requires precise optical control for individual qubit manipulation. However, conventional free-space optics face challenges in alignment stability and scalability as the number of qubits increases. Integrated photonics offers a promising alternative, providing miniaturized optical systems on a chip. Here, we propose a design for a multimode photonic circuit integrated with a surface-electrode ion trap capable of targeted and reconfigurable light delivery. Three closely positioned ions can be addressed using a focusing grating coupler that emits multimode light through electrode openings to ions trapped 80 μm above the chip. Simulations show that the couplers achieve diffraction-limited spot with a 4.3 μm beam waist along the trap axis and 2.2 μm perpendicular to the trap axis. Controlled interference of the TE10 and TE20 modes results in crosstalk of -20 dB to -30 dB at ion separations of 5-8 μm when addressing ions individually, and down to -60 dB when two of the three ions are addressed simultaneously. Additionally, the higher-order TE modes can offer a novel mechanism for driving spin-motion coupling transitions, potentially enabling alternative approaches to quantum gates and simulations. The proposed integrated platform offers a viable path for constructing large-scale trapped-ion systems, leveraging the benefits of nanophotonic design for precise and reliable ion manipulation.
Trapped ions provide a high-fidelity platform for quantum information processing, yet delivery of multiple, distinct wavelengths across large networks of interaction zones remains a bottleneck. Conventional free-space light delivery lacks scalability, while on-chip grating couplers suffer from narrow operational bandwidth that increases circuit footprint and optical interfacing complexity. Here we show a broadband photonic integrated circuit capable of addressing individual ions. The circuit combines a planar waveguide lens with a micromirror fabricated using two-photon polymerization at wafer scale. This implementation can address three individual ions from λ = 405 - 880 nm with -27 dB average intensity crosstalk at 5μm pitch. We trap 40Ca+ and 138Ba+ ions above such devices, characterize optical crosstalk with barium ions, and demonstrate individual repumping of calcium ions. This monolithic photonic architecture brings broadband addressing in an on-chip modality to trapped-ion technology. More generally, integrating additive manufacturing into quantum devices is poised to unlock expanded design space for implementing novel quantum architectures.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si 3 N 4 ) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb + -applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.
Trapped-ion quantum computers, leveraging a quantum charge-coupled device (QCCD) architecture, have world-class performance in the field of quantum computing, offering high fidelities and all-to-all connectivity [1]. While systems have advanced over the last decade, much work remains to scale quantum computers to fault-tolerance. Providing scalable light delivery is one key challenge. Current systems utilize engineered bulk- and fiber-optic-based light delivery systems, external to the vacuum chamber, to deliver arrays of beams to ions. However, fundamental optical limitations preclude the use of such systems when scaling beyond thousands of qubits. Integrated photonic-based beam delivery offers a potential solution, with encouraging proof-of-concept demonstrations from the photonics and quantum communities [2]–[5]. Quantinuum and Sandia National Labs have partnered to accelerate the development of integrated photonics for trapped-ion quantum computing applications, working towards photonic components supporting high-fidelity operations. Here, we present development of photonic integrated components designed to deliver laser light toBa+qubits, utilizing a low-loss, high-confinement, trap-integrable PECVD SiN platform. In order to demonstrate two-qubit gates at 532 nm, we developed low loss, tight bend waveguides, efficient edge couplers, and asymmetric multimode interference (MMI) splitters, along with beam-forming grating out-couplers delivering gaussian beams at the ion plane. For quantum state preparation and measurement (SPAM) applications at4 9 3 n m, we demonstrate fabrication-tolerant splitters and low-crosstalk gratings. Measured component performance shows promise for future trap-integrated demonstrations.
Abstract Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors1–4. Trapped atomic ions form the basis of high-fidelity quantum information processors5, 6 and high-accuracy optical clocks7. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. Here we demonstrate a surface-electrode ion-trap chip8, 9 using integrated waveguides and grating couplers, which delivers all the wavelengths of light required for ionization, cooling, coherent operations and quantum state preparation and detection of Sr+ qubits. Laser light from violet to infrared is coupled onto the chip via an optical-fibre array, creating an inherently stable optical path, which we use to demonstrate qubit coherence that is resilient to platform vibrations. This demonstration of CMOS-compatible integrated photonic surface-trap fabrication, robust packaging and enhanced qubit coherence is a key advance in the development of portable trapped-ion quantum sensors and clocks, providing a way towards the complete, individual control of larger numbers of ions in quantum information processing systems.
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize key silicon nitride (Si3N4) PIC components required for scaling trapped-ion based quantum systems to multiple operating zones, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760 nm, which is a typical wavelength for Yb+-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.