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Optical and Quantum Electronics

Spin squeezing in nitrogen vacancy center quantum systems with non-Markovian thermal environment

Boya Li, J.-S. Wu, Ying Xi, Lian-E Lu, Huihui Xu, Yonghong Ma

Published Mar 19, 2025• 2 citations
Publisher
DOI
10.1007/s11082-025-08135-x

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Spin squeezing, a compelling manifestation of multiparticle entanglement, is considered one of the most promising quantum resources. Non-Markovian characteristics play a crucial role in many critical physical processes involving strong system-environment interactions. We investigate the generation of spin squeezing in a hybrid quantum system composed of silicon-vacancy color centers (SiV) and diamond acoustic waveguides in a finite-temperature non-Markovian environment. The results indicate that memory parameters, damping rates, environmental temperature, and the total spin number play critical roles in the generation of spin squeezing. By appropriately tuning these parameters, the spin-squeezing effect of the quantum system can be significantly enhanced. This study provides theoretical foundations and optimization strategies for the application of quantum systems in complex environments, such as quantum information processing and quantum precision measurement.
We propose an efficient scheme for generating a stable spin-squeezed state in a hybrid magnon-nitrogen-vacancy (NV) centers system via magnon-Floquet driving. The system consists of a yttrium iron garnet (YIG) film directly coupled to NV centers that are equidistant from the film surface, and at the same time the YIG film is driven by a Floquet field. The magnon dissipation is exploited to distribute the NV centers into the dark state, manifesting as the stable spin-squeezed state. We show that the system exhibits the low- or high-energy dark state, which is determined by whether the lowering or the raising spin operator plays the dominant role in evolution. Furthermore, we also show that the spin squeezing is robust against thermal effects and decoherence, and it is possible to detect the change in N at the single-spin level, since it exhibits a distinct odd-even effect. This scheme provides a feasible way for experimental implementation and thus has potential applications in quantum information processing, quantum simulation, and precision metrology.