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IEEE Transactions on Applied Superconductivity

Characterizing Niobium Nitride-Based Superconducting Coplanar Waveguide Resonators for Microwave Hybrid Circuit Quantum Electrodynamics

Paniz Foshat, Paul Baity, Sergey Danilin, Valentino Seferai, Shima Poorgholam-Khanjari, Hua Feng, Oleg A. Mukhanov, Matthew Hutchings, Robert H. Hadfield, Martin P. Weides, Kaveh Delfanazari

Published Jan 22, 2025• 10 citations
Publisher

Abstract

The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material for applications in superconducting quantum technology. However, NbN-based superconducting circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor ($Q_{i}$) decreases from$Q_{i}\sim 1.07\times 10^{6}$in a high power regime to$Q_{i}\sim 1.36\times 10^{5}$in the single photon regime. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature ($T$) dependence of$Q_{i}$and resonance frequency$f_{r}$of coplanar waveguide resonators to characterize the quasiparticle density. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measure$f_{r}$and$Q_{i}$in response to in-plane magnetic fields ($B_{||}$). We verify that$Q_{i}$stays well above$10^{4}$up to$B_{||}$= 240 mT in the photon number$< \! n_{ph} \! >$= 1.8 at$T$= 100 mK. Our results could enable the development of robust microwave superconducting circuits for circuit quantum electrodynamics at high magnetic fields required for hybrid superconducting-semiconducting quantum circuits.

DOI
10.1109/tasc.2025.3532821

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The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material for applications in superconducting quantum technology. However, NbN-based superconducting circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor (QiQ_{i}Qi​) decreases fromQi∼1.07×106Q_{i}\sim 1.07\times 10^{6}Qi​∼1.07×106in a high power regime toQi∼1.36×105Q_{i}\sim 1.36\times 10^{5}Qi​∼1.36×105in the single photon regime. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature (TTT) dependence ofQiQ_{i}Qi​and resonance frequencyfrf_{r}fr​of coplanar waveguide resonators to characterize the quasiparticle density. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measurefrf_{r}fr​andQiQ_{i}Qi​in response to in-plane magnetic fields (B∣∣B_{||}B∣∣​). We verify thatQiQ_{i}Qi​stays well above10410^{4}104up toB∣∣B_{||}B∣∣​= 240 mT in the photon number< ⁣nph ⁣>< \! n_{ph} \! ><nph​>= 1.8 atTTT= 100 mK. Our results could enable the development of robust microwave superconducting circuits for circuit quantum electrodynamics at high magnetic fields required for hybrid superconducting-semiconducting quantum circuits.
The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material candidate for applications in superconducting quantum technology. However, NbN-based devices and circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays, with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor (Qi) decreases from Qi ~ 1.07*10^6 in a high power regime (< nph > = 27000) to Qi ~ 1.36 *10^5 in single photon regime at temperature T = 100 mK. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature dependence internal quality factor and frequency tuning of the coplanar waveguide resonators to characterise the quasiparticle density of NbN. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measure the resonators' resonance frequency and internal quality factor at single photon regime in response to in-plane magnetic fields B||. We verify that Qi stays well above 10^4 up to B|| = 240 mT in the photon number < nph > = 1.8 at T = 100 mK. Our results may pave the way for realising robust microwave superconducting circuits for circuit quantum electrodynamics (cQED) at high magnetic fields necessary for fault-tolerant quantum computing, and ultrasensitive quantum sensing.
We characterize niobium nitride (NbN) λ/2 coplanar waveguide resonators, which were fabricated from a 10-nm-thick film on silicon dioxide grown by sputter deposition. For films grown at 180 °C, we report a superconducting critical temperature of 7.4 K associated with a normal square resistance of 1 kΩ, leading to a kinetic inductance of 192 pH/◻. We fabricated resonators with a characteristic impedance up to 4.1 kΩ and internal quality factors Qi>104 in the single photon regime at zero magnetic field. Moreover, in the many photon regime, the resonators present a high magnetic field resilience with Qi>104 in a 6 T in-plane magnetic field and in a 300 mT out-of-plane magnetic field. These findings make such resonators a compelling choice for circuit quantum electrodynamics experiments involving quantum systems with small electric dipole moments operated in finite magnetic fields.
Measurements are made on superconducting Niobium on Sapphire and oxidized Silicon microwave coplanar resonators for quantum bit experiments. Device geometry and materials are investigated and quality factors in excess of a million have been observed. The resonant frequency as a function of temperature of a coplanar resonator is characterised in terms of the change in the number density of superconducting electrons. At lower temperatures, the resonant frequency no longer follows this function, and evidence is shown that this is associated with the resonant coupling of the resonant frequency with two level systems in the substrate. At T<2.2 K the resonant frequency scales logarithmically with the temperature, indicating that two level systems distributed in the volume of the Silicon Dioxide affect the electric permittivity. Applying higher input microwave power levels is shown to saturate these two level systems, essentially decoupling them from the CPR resonance. This is observed as an increase in resonant frequency and Q factor. The resonant frequency is also shown to have a high sensitivity to a magnetic field applied perpendicular to the plane of the coplanar resonator, with a quadratic dependence for the fundamental, second and third harmonics. Frequency shift of hundreds of linewidths are obtained. Coplanar resonator are fabricated and measured with current control lines built on chip, and these have shown to produce frequency shifts of tens of Kilohertz.
Abstract Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here we demonstrate the fabrication engineering of thickness-dependent high-quality-factor (high-  Qi\:{Q}_{i}Qi​ ) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to promote a body-centred cubic lattice (  α \:\alpha\:α -Ta) formation. We further engineer the kinetic inductance (  LK\:{L}_{K}LK​ ) of the resonators by varying Ta film thicknesses. High  LK\:{L}_{K}LK​ is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor  Qi\:{Q}_{i}Qi​ of  ∼ \:\sim\:∼ 3.6 × 10 6 in the high power regime and  Qi\:{Q}_{i}Qi​ of  ∼ \:\sim\:∼ 4.5 × 10 5 in the single-photon regime is achieved for 100 nm Ta which represents an improvement over previous room-temperature deposited Ta resonators on silicon substrates in the single photon regime, while the highest kinetic inductance of 0.6 pH/sq is obtained for the thinnest film, which is 40 nm. This combination of high  Qi\:{Q}_{i}Qi​ and high  LK\:{L}_{K}LK​ highlights the potential of Ta microwave circuits for high-fidelity operation of compact quantum circuits.
Superconducting coplanar waveguide (SCPW) resonators, key components for quantum computing and sensing applications, require a high internal quality factor ( Q i ) for effective qubit readout and quantum sensing applications. Minimizing two-level system (TLS) losses, particularly at material interfaces, is critical for gatemon and topological qubits operating at low temperatures and in high magnetic fields. NbTi, a superconducting alloy with a high upper critical field, enables SCPW resonators resilient to such conditions. We fabricated NbTi SCPW resonators on Si/SiO 2 substrates and systematically characterized their TLS-limited quality factors as functions of temperature and microwave photon number. Our results demonstrate that NbTi-based SCPWs on Si/SiO 2 substrates provide a promising platform for developing next-generation quantum circuits. • Successfully fabricated NbTi SCPW resonators on Si/SiO 2 substrates. • Characterized NbTi SCPW across temperature and photon ranges for quantum apps. • Achieved record TLS-limited quality factor Q TLS,0 = 9.21 × 10 4 for SCPW on Si/SiO 2 . • NbTi SCPW on Si/SiO 2 is promising for gatemon and topological qubits.
We successfully designed and fabricated an absorption-type of superconducting coplanar waveguide (CPW) resonators. The resonators are made from a niobium film (about 160 nm thick) on a high-resistance Si substrate, and each resonator is fabricated as a meandered quarter-wavelength transmission line (one end is short to the ground and another end is capacitively coupled to a through feedline). With a vector network analyzer we measured the transmissions of the applied microwave through the resonators at ultra-low temperature. The obtained loaded quality factors are significantly high, i.e. up to ∼10 6 . When the temperature increases slowly from the base temperature (20 mK), the resonance frequencies of the resonators are blue shifted and the quality factors are lowered slightly. In principle, this type of device can integrate a series of CPW resonators with a common feedline, making it a promising candidate as the data bus for coupling distant solid-state qubits and the sensitive detector of single photons.