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IEEE Transactions on Applied Superconductivity

Loss Mechanisms of Epitaxial NbN Coplanar Waveguide Resonators on an MgO Substrate

Kohki Watanabe, Hiroki Kutsuma, Sunmi Kim, Taro Yamashita

Published Dec 9, 2024• 2 citations
Publisher

Abstract

We investigated the loss mechanisms of superconducting circuits with epitaxially grown NbN(100) on MgO(100) substrates by measuring quarter-wave coplanar waveguide resonators with various strip and slot widths. The power dependence of the internal quality factor and the temperature dependence of the resonance frequency shift were evaluated in a dilution refrigerator. The measurement and analysis of the loss in these resonators indicate that the loss was dominated by a two-level system (TLS) loss and the TLS host materials were primarily distributed at the surface of the substrate.

DOI
10.1109/tasc.2024.3513276

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We investigated the loss mechanisms of superconducting circuits with epitaxially grown NbN(100) on MgO(100) substrates by measuring quarter-wave coplanar waveguide resonators with various strip and slot widths. The power dependence of the internal quality factor and the temperature dependence of the resonance frequency shift were evaluated in a dilution refrigerator. The measurement and analysis of the loss in these resonators indicate that the loss was dominated by a two-level system (TLS) loss and the TLS host materials were primarily distributed at the surface of the substrate.
In current superconducting qubit circuit development, coherence time is limited by low-frequency flux noise introduced from localized two-level systems (TLSs) in the fabricated superconducting circuit, including superconducting materials, the interface between thin films, and the substrate. As a part of the effect to tackle this issue from a substrate standpoint, we succeed in fabricating NbN (200) oriented coplanar waveguide resonator (CPWR) on a thin titanium nitride (TiN) (200) buffered Si (100) substrate. The internal loss is close to 3 × 10-5nearphoton> ~1, improved from ~2 × 10-4in NbN (200) CPWR fabricated on MgO (100). For NbN (200) resonators grown on Si (100), the internal loss shows microwave energy independent. To further clarity if this energy independence is due to the change of substrate material, we also fabricated TiN (200) CPWR on Si (100). In contrast to NbN (200) CPWR, the loss of TiN (200) resonator shows a strong microwave dependent, an indication of TLSs originated from the interface and the surface. We suggest TLSs in NbN (200) CPWR are dominated from different mechanism other than arising from the interface and surface.
We have investigated both the temperature and the power dependence of microwave losses for various dielectrics commonly used as substrates for the growth of High critical Temperature Superconductor thin films. We present measurement of niobium superconducting λ/2λ/2λ/2 coplanar waveguide resonators, fabricated on La0.3Sr0.7Al0.65Ta0.35O3La_{0.3}Sr_{0.7}Al_{0.65}Ta_{0.35}O_3La0.3​Sr0.7​Al0.65​Ta0.35​O3​ (LSAT), MgOMgOMgO (MgO) and LaAlO3LaAlO_3LaAlO3​ (LAO), at the millikelvin temperature range and at low input power. By comparing our results with the Two-Level System (TLS) model, we have discriminated among different dominant loss mechanisms. LSAT has shown the best results as regards the dielectric losses in the investigated regimes.
The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material for applications in superconducting quantum technology. However, NbN-based superconducting circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor (QiQ_{i}Qi​) decreases fromQi∼1.07×106Q_{i}\sim 1.07\times 10^{6}Qi​∼1.07×106in a high power regime toQi∼1.36×105Q_{i}\sim 1.36\times 10^{5}Qi​∼1.36×105in the single photon regime. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature (TTT) dependence ofQiQ_{i}Qi​and resonance frequencyfrf_{r}fr​of coplanar waveguide resonators to characterize the quasiparticle density. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measurefrf_{r}fr​andQiQ_{i}Qi​in response to in-plane magnetic fields (B∣∣B_{||}B∣∣​). We verify thatQiQ_{i}Qi​stays well above10410^{4}104up toB∣∣B_{||}B∣∣​= 240 mT in the photon number< ⁣nph ⁣>< \! n_{ph} \! ><nph​>= 1.8 atTTT= 100 mK. Our results could enable the development of robust microwave superconducting circuits for circuit quantum electrodynamics at high magnetic fields required for hybrid superconducting-semiconducting quantum circuits.
High quality factor, i.e. low loss, microwave resonators are important for quantum information storage and addressing. In this work we study the resonance frequency and loss in superconducting coplanar waveguide resonators as a function of power and temperature. We find that there is increased loss at low power and low temperature. The increased loss is attributed to the existence of two-level systems (TLS) at the surfaces, interfaces, and in the bulk of insulators deposited on the structures. We show that both the temperature dependence of the resonant frequency and the power dependence of the loss can be used to find the TLS contribution to the loss. The TLS intrinsic loss tangent derived from the frequency shift data at high power is shown to agree well with the direct loss measurement at low power. The former allows for a relatively fast measurement of the TLS loss. As an example, we measure the properties of amorphous AlOXdeposited on the resonators and find a TLS loss tangent of 1 × 10-3.
The loss in superconducting microwave resonators at low-photon numbers and low temperatures is not well understood but has implications for achievable coherence times in superconducting qubits. We have fabricated single-layer resonators with a high quality factor by patterning a superconducting aluminum film on a sapphire substrate. Four resonator geometries were studied with resonant frequencies ranging from 5 to 7 GHz: a quasi-lumped element resonator, a coplanar strip waveguide resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Transmitted power measurements were taken at 30 mK as a function of frequency and probe power. We find that the resonator loss, expressed as the inverse of the internal quality factor, decreases slowly over four decades of photon number in a manner not merely explained by loss from a conventional uniform spatial distribution of two-level systems in an oxide layer on the superconducting surfaces of the resonator.
The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material candidate for applications in superconducting quantum technology. However, NbN-based devices and circuits are sensitive to decoherence sources such as two-level system (TLS) defects. Here, we numerically and experimentally investigate NbN superconducting microwave coplanar waveguide resonator arrays, with a 100 nm thickness, capacitively coupled to a common coplanar waveguide on a silicon chip. We observe that the resonators' internal quality factor (Qi) decreases from Qi ~ 1.07*10^6 in a high power regime (< nph > = 27000) to Qi ~ 1.36 *10^5 in single photon regime at temperature T = 100 mK. Data from this study is consistent with the TLS theory, which describes the TLS interactions in resonator substrates and interfaces. Moreover, we study the temperature dependence internal quality factor and frequency tuning of the coplanar waveguide resonators to characterise the quasiparticle density of NbN. We observe that the increase in kinetic inductance at higher temperatures is the main reason for the frequency shift. Finally, we measure the resonators' resonance frequency and internal quality factor at single photon regime in response to in-plane magnetic fields B||. We verify that Qi stays well above 10^4 up to B|| = 240 mT in the photon number < nph > = 1.8 at T = 100 mK. Our results may pave the way for realising robust microwave superconducting circuits for circuit quantum electrodynamics (cQED) at high magnetic fields necessary for fault-tolerant quantum computing, and ultrasensitive quantum sensing.