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SPIE Conference on Quantum and Nonlinear Optics

Quantum control and quantum precision measurement of silicon carbide color centers

Junfeng Wang

Published Nov 23, 2024• 0 citations
Publisher

Abstract

As a cutting-edge quantum information research system at the intersection of "quantum information" and "integrated circuits", silicon carbide color center has become one of the important solid-state quantum systems in recent years. Silicon carbide color center system has the following characteristics :1) Silicon carbide is a mature semiconductor material, quantum information technology based on silicon carbide color center is easy to integrate with semiconductor industry technology; 2) Silicon carbide color center fluorescence in the near infrared band, which is conducive to transmission in optical fiber communication network; 3) Silicon carbide color center spin coherence time is long, easy to perform more quantum algorithms. This report mainly introduces the research progress of quantum control and quantum precision measurement of silicon carbide color centers, including the basic knowledge of silicon carbide color centers, the preparation, observation and quantum control of its spin quantum states, as well as the application of this system in the fields of quantum control and quantum precision measurement.

DOI
10.1117/12.3035728

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As a cutting-edge quantum information research system at the intersection of "quantum information" and "integrated circuits", silicon carbide color center has become one of the important solid-state quantum systems in recent years. Silicon carbide color center system has the following characteristics :1) Silicon carbide is a mature semiconductor material, quantum information technology based on silicon carbide color center is easy to integrate with semiconductor industry technology; 2) Silicon carbide color center fluorescence in the near infrared band, which is conducive to transmission in optical fiber communication network; 3) Silicon carbide color center spin coherence time is long, easy to perform more quantum algorithms. This report mainly introduces the research progress of quantum control and quantum precision measurement of silicon carbide color centers, including the basic knowledge of silicon carbide color centers, the preparation, observation and quantum control of its spin quantum states, as well as the application of this system in the fields of quantum control and quantum precision measurement.
Color centers in wide bandgap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, and spin–photon and spin–spin entanglement, as well as the potential for scalability. Silicon carbide color centers integrated into photonic devices span a wide range of applications in quantum information processing in a material platform with quantum-grade wafer availability and advanced processing capabilities. Recent progress in emitter generation and characterization, nanofabrication, device design, and quantum optical studies has amplified the scientific interest in this platform. We provide a conceptual and quantitative analysis of the role of silicon carbide integrated photonics in three key application areas: quantum networking, simulation, and computing.
Abstract Color centers in diamond, silicon carbide, and related materials have recently emerged as one of the most promising platforms for quantum technology applications. These optically active point defects in the crystal lattice demonstrate outstanding optical and spin properties at room and even higher temperatures, which can hardly be achieved using other quantum systems. For a long time, the host material was considered only as a mechanical carrier of color centers, and the fact that it is a semiconductor and, therefore, can contain high densities of electrons and holes, was ignored. However, recent studies have demonstrated that color centers can exchange electrons and holes with the valence or conduction bands of the host material, which enables novel functionalities, ranging from ultrabright electrically driven single‐photon sources to protected quantum memories. This review summarizes recent advances in understanding this interaction.
In the past decade, color centers in silicon carbide (SiC) have emerged as promising platforms for various quantum information technologies. There are three main types of color centers in SiC: silicon-vacancy centers, divacancy centers, and nitrogen-vacancy centers. Their spin states can be polarized by laser and controlled by microwave. These spin defects have been applied in quantum photonics, quantum information processing, quantum networks, and quantum sensing. In this review, we first provide a brief overview of the progress in single-color center fabrications for the three types of spin defects, which form the foundation of color center-based quantum technology. We then discuss the achievements in various quantum sensing, such as magnetic field, electric field, temperature, strain, and pressure. Finally, we summarize the current state of fabrications and quantum sensing of spin defects in SiC and provide an outlook for future developments.
Abstract Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright optical properties. Several suitable centers have been identified, most famously the nitrogen-vacancy defect in diamond. However, integration in communication technology is hindered by the fact that their optical transitions lie outside telecom wavelength bands. Several transition-metal impurities in silicon carbide do emit at and near telecom wavelengths, but knowledge about their spin and optical properties is incomplete. We present all-optical identification and coherent control of molybdenum-impurity spins in silicon carbide with transitions at near-infrared wavelengths. Our results identify spin S = 1/2 for both the electronic ground and excited state, with highly anisotropic spin properties that we apply for implementing optical control of ground-state spin coherence. Our results show optical lifetimes of ~60 ns and inhomogeneous spin dephasing times of ~0.3 μs, establishing relevance for quantum spin-photon interfacing.
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration sixfold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature, and the coherence time T_{2} can be reached to around 17.1 μs. Furthermore, an investigation of fluorescence properties of single NV centers shows that they are room-temperature photostable single-photon sources at telecom range. Taking advantage of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.