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Measurement

A non-thermal method to maintain alkali vapor density of anti-relaxation coating cell in spin exchange relaxation-free magnetometer

Yong Xu, Hongyu Pei, Yuxin Cong, Xueqi Li, Haoying Pang, Zhuangsheng Zhu

Published Nov 8, 2024• 14 citations
Publisher
DOI
10.1016/j.measurement.2024.115960

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Anti-relaxation coatings are commonly employed in the alkali metal vapor cells of spin-exchange relaxation-free (SERF) atomic magnetometers, as they can prevent spin depolarization of alkali metal atoms. However, the anti-relaxation mechanism and the interaction process between atoms and coatings remain unclear. This lack of understanding hinders the further improvement of the performance of SERF atomic magnetometers. In this study, we employed first-principles density functional theory to comparatively investigate the microscopic interactions between Rb atoms and SiO2 substrates as well as three commonly used organic coatings. The adsorption energies and valence electron loss of Rb atoms during their adsorption processes on these coated surfaces were systematically calculated. It was found that the Rb atoms exhibited the lowest adsorption energy and the highest charge transfer on the SiO2 surface, with values of –3.55eV and 0.90 |e|, respectively. In contrast, on the 1-nonadecene surface, the adsorption energy reached only –0.13eV, with a charge transfer of merely 0.14 |e|. Similar results were observed for other organic coatings and these findings are highly consistent with previous anti-relaxation performance tests, indicating that alkali metal atoms undergo less energy dissipation and charge transfer on the surface of organic coatings, which can better maintain the electron spin polarization state. A close relationship can be established between adsorption energy, charge transfer and the anti-relaxation performance of coatings, which provides effective guidance for future theoretical research and material selection, thus accelerating the development of SERF magnetometers.
Compared with superconducting quantum interference devices, chip-scale atomic magnetometers using the wafer-level micro alkali vapor cells can be used more conveniently in the applications of geophysical mapping, health care and remote monitoring. Drastic wall collisions and decreased polarization lifetime are the main barriers for the performance of the chip-scale atomic magnetometers. In this study, OTS organic films coated on the inner surface of the micro vapor cells were used to suppress wall collisions and improve polarization lifetime of the alkali atoms in the micro cells. First of all, the fabrication process of wafer-level micro OTS coated vapor cells is introduced, the process is based on anodic bonding technology. Then the prepared wafer-level micro OTS coated vapor cells have been characterized by the water-contact angle test and measured in the micro-machined spin-exchange relaxation free(SERF) atomic magnetometers. Results show that the OTS coating is effective after anodic bonding from the water contact angle test. Results also indicate that the spin exchange relaxation free atomic magnetometer using the micro OTS-coated vapor cell can operate successfully.