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IEEE Electronic Components and Technology Conference (ECTC)

Wafer-Level Micro Alkali Vapor Cells with Anti-Relaxation Coating Compatible with MEMS Packaging for Chip-Scale Atomic Magnetometers

Yu Ji, Jintang Shang, Qi Gan, Lei Wu

Published May 1, 2017• 4 citations
Publisher

Abstract

Compared with superconducting quantum interference devices, chip-scale atomic magnetometers using the wafer-level micro alkali vapor cells can be used more conveniently in the applications of geophysical mapping, health care and remote monitoring. Drastic wall collisions and decreased polarization lifetime are the main barriers for the performance of the chip-scale atomic magnetometers. In this study, OTS organic films coated on the inner surface of the micro vapor cells were used to suppress wall collisions and improve polarization lifetime of the alkali atoms in the micro cells. First of all, the fabrication process of wafer-level micro OTS coated vapor cells is introduced, the process is based on anodic bonding technology. Then the prepared wafer-level micro OTS coated vapor cells have been characterized by the water-contact angle test and measured in the micro-machined spin-exchange relaxation free(SERF) atomic magnetometers. Results show that the OTS coating is effective after anodic bonding from the water contact angle test. Results also indicate that the spin exchange relaxation free atomic magnetometer using the micro OTS-coated vapor cell can operate successfully.

DOI
10.1109/ectc.2017.136

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Compared with superconducting quantum interference devices, chip-scale atomic magnetometers using the wafer-level micro alkali vapor cells can be used more conveniently in the applications of geophysical mapping, health care and remote monitoring. Drastic wall collisions and decreased polarization lifetime are the main barriers for the performance of the chip-scale atomic magnetometers. In this study, OTS organic films coated on the inner surface of the micro vapor cells were used to suppress wall collisions and improve polarization lifetime of the alkali atoms in the micro cells. First of all, the fabrication process of wafer-level micro OTS coated vapor cells is introduced, the process is based on anodic bonding technology. Then the prepared wafer-level micro OTS coated vapor cells have been characterized by the water-contact angle test and measured in the micro-machined spin-exchange relaxation free(SERF) atomic magnetometers. Results show that the OTS coating is effective after anodic bonding from the water contact angle test. Results also indicate that the spin exchange relaxation free atomic magnetometer using the micro OTS-coated vapor cell can operate successfully.
Wafer-level integration of micro heater on an alkali vapor cell for chip-scale SERF magnetometers is presented. In order to obtain a suitable resistivity, polysilicon and aluminum are mixed as the target material. Magnetron sputtering is adopted to fabricate the heater on the surface of the alkali vapor cell. Various voltages are applied to the heater, of which the temperatures are measured by thermal sensitive sensors. Spin exchange relaxation free (SERF) atomic magnetometer with the heater integrated on the alkali vapor cell is characterized. Results show that the micro heater is successfully integrated on the alkali vapor cell. With the integrated heater, the rubidium vapor cell is heated up to 120°C by a 445kHz AC current. The sensitivity of the SERF magnetometer is 6.3pT/Hz1/2. Results also indicate that it provides an effective and low-cost solution for the miniaturization of atomic magnetometers.
The designs of microfabricated alkali vapor cells play an important role when the atomic magnetometers are developing toward on-chip integration. This paper presents microfabricated spherical alkali vapor cells with improved sensitivity for chip-scale atomic magnetometers. A microfabricated spherical rubidium vapor cell and a traditional microfabricated planar rubidium vapor cell are designed for comparison, which are of the same volume and interconnected by a microchannel to acquire equal inner buffer gas pressure. In chip-scale spin-exchange relaxation-free (SERF) atomic magnetometers, the rubidium polarization lifetimes of three pairs of spherical and planar vapor cells at different buffer gas pressures of 0.35, 0.73, and 2.00 amg are measured, respectively. The sensitivity of SERF atomic magnetometers using the vapor cells at a 0.35-amg buffer gas pressure is also measured. The results show that the transverse polarization lifetime of the spherical vapor cell is 2.46, 1.44, and 1.05 times that of the planar one at 0.35-, 0.73-, and 2.00-amg buffer gas pressures, respectively. Combining the improved polarization lifetime and increased optical path length, chip-scale SERF atomic magnetometer using the microspherical vapor cell has the sensitivity of 60 fT/Hz1/2from 5 to 15 Hz, while that based on the planar one is demonstrated with the sensitivity of 400 fT/Hz1/2from 5 to 15 Hz.
Accurate characterization of atomic vapor cells is crucial for enhancing the sensitivity of miniature atomic magnetometers. In this study, a fast and efficient approach is developed to characterize relaxation properties of the inner surface of the 87Rb micro-electro-mechanical systems (MEMS) vapor cell. Based on the zero-field level crossing effect, the transverse relaxation rate was experimentally determined, and the depolarization coefficient of 0.097 for atom-wall collisions in the 87Rb MEMS vapor cell was obtained. The experiments demonstrated that the alkali-wall collision relaxation gradually dominates the depolarization of the 87Rb ensemble as the radius of the vapor cell decreases. This research provides a quantitative method to evaluate the effectiveness of the MEMS vapor cell anti-relaxation coatings and offers the design inspiration for MEMS atomic vapor cells from the perspective of relaxation characterization. It is beneficial for the development of weak magnetic field detections such as biomagnetism detection in ambient environments.
In the process of miniaturizing atomic spin gyroscopes, the relaxation due to the wall collisions of the alkali vapor cell leads to a shorter transverse relaxation time, which increases the key index of the atomic spin gyroscope, the angle random walk, and reduces the gyroscope’s accuracy. This paper theoretically analyzes the thermal stability of the interaction between the new anti-relaxation coating and molecules of the vapor cell, as well as the surface energy of the anti-relaxation coating molecular groups. Based on the results, a new anti-relaxation coating material and its preparation process were proposed. A novel anti-relaxation coating was experimentally prepared. Compositional analysis confirmed its successful covalent bonding with hydroxyl groups on the cell inner-surface, demonstrating superior thermal stability. Through comparative experiments including surface morphology analysis, contact angle measurement, and transverse relaxation time measurement, the new anti-relaxation coating proposed in this paper exhibits lower surface energy. It also has more excellent anti-relaxation performance compared to the traditional OTS anti-relaxation coating.
Alkali metal vapor cells are fundamental components in quantum sensors, and their relaxation characteristics critically influence both sensitivity and system stability. In Spin-Exchange Relaxation-Free (SERF) atomic magnetometers, although spin-exchange collisions are effectively suppressed, wall-collision-induced relaxation remains the primary limiting factor. A coating-enabled buffer-gas-free vapor cell (CBF-VC) is proposed as a novel sensor unit, realized through multilayer octadecyltrichlorosilane (OTS) selfassembled molecular coatings. The CBF-VC is integrated into a single-beam SERF atomic magnetometer, and experimental validation is conducted. The results indicate a significant extension of the wall collision relaxation time from 40.19 ms. This extended relaxation time directly enhances the magnetometer sensitivity by 48%, confirming the feasibility of CBF-VCs as a measurement-oriented vapor cell architecture. The findings demonstrate not only the effectiveness of anti-relaxation coatings, but also a new instrumentation pathway for advancing next-generation quantum sensing.